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Class Information
Number: 257/E21.173
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iii-v compound (epo) > Deposition of schottky electrode (epo)
Description: This subclass is indented under subclass E21.172. This subclass is substantially the same in scope as ECLA classification H01L21/285B6B.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8629525 Second contact schottky metal layer to improve GaN schottky diode performance Jan. 14, 2014
8183103 Integrated circuit structure including schottky diode and method for manufacturing the same May. 22, 2012
8148241 Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films Apr. 3, 2012
8133775 Semiconductor device with mushroom electrode and manufacture method thereof Mar. 13, 2012
8026568 Second Schottky contact metal layer to improve GaN Schottky diode performance Sep. 27, 2011
7842576 Semiconductor device including first and second sidewalls and method of manufacturing semiconductor device Nov. 30, 2010
7816240 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Oct. 19, 2010
7488673 Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof Feb. 10, 2009
7247550 Silicon carbide-based device contact and contact fabrication method Jul. 24, 2007
6852612 Semiconductor device and method for fabricating the same Feb. 8, 2005
6809352 Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices Oct. 26, 2004
6800499 Process for preparing a hydrogen sensor Oct. 5, 2004
6768146 III-V nitride semiconductor device, and protection element and power conversion apparatus using the same Jul. 27, 2004
6656823 Semiconductor device with schottky contact and method for forming the same Dec. 2, 2003
6524937 Selective T-gate process Feb. 25, 2003
6521998 Electrode structure for nitride III-V compound semiconductor devices Feb. 18, 2003
6410460 Technology for thermodynamically stable contacts for binary wide band gap semiconductors Jun. 25, 2002
6387783 Methods of T-gate fabrication using a hybrid resist May. 14, 2002
6383853 Method of fabricating semiconductor device May. 7, 2002
6372613 Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor Apr. 16, 2002
6329227 Method of patterning organic polymer film and method for fabricating semiconductor device Dec. 11, 2001
6294446 Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode Sep. 25, 2001
6255035 Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices Jul. 3, 2001
6200885 III-V semiconductor structure and its producing method Mar. 13, 2001
6197667 Structure and method for manufacturing Group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer Mar. 6, 2001
6180528 Method for forming a minute resist pattern and method for forming a gate electrode Jan. 30, 2001
6159861 Method of manufacturing semiconductor device Dec. 12, 2000
6153499 Method of manufacturing semiconductor device Nov. 28, 2000
6100547 Field effect type semiconductor device and method of fabricating the same Aug. 8, 2000
6100555 Semiconductor device having a photosensitive organic film, and process for producing the same Aug. 8, 2000
6087704 Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer Jul. 11, 2000
6066865 Single layer integrated metal enhancement mode field-effect transistor apparatus May. 23, 2000
6051484 Semiconductor device and method of manufacturing thereof Apr. 18, 2000
6051506 Method of fabrication ultra-frequency semiconductor device Apr. 18, 2000
6037200 Compound semiconductor device and fabrication method Mar. 14, 2000
6020226 Single layer integrated metal process for enhancement mode field-effect transistor Feb. 1, 2000
6013926 Semiconductor device with refractory metal element Jan. 11, 2000
5994753 Semiconductor device and method for fabricating the same Nov. 30, 1999
5994728 Field effect transistor and method for producing the same Nov. 30, 1999
5981319 Method of forming a T-shaped gate Nov. 9, 1999
5982036 Multi-layered structure for ohmic electrode fabrication Nov. 9, 1999
5970328 Fabrication method of T-shaped gate electrode in semiconductor device Oct. 19, 1999
5940697 T-gate MESFET process using dielectric film lift-off technique Aug. 17, 1999
5930610 Method for manufacturing T-gate Jul. 27, 1999
5925902 Semiconductor device having a schottky film with a vertical gap formed therein Jul. 20, 1999
5923072 Semiconductor device with metallic protective film Jul. 13, 1999
5907177 Semiconductor device having a tapered gate electrode May. 25, 1999
5904554 Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode May. 18, 1999
5876901 Method for fabricating semiconductor device Mar. 2, 1999
5869365 Method of forming T electrode in field effect transistor Feb. 9, 1999

1 2 3

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