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Class Information
Number: 257/E21.172
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iii-v compound (epo)
Description: This subclass is indented under subclass E21.161. This subclass is substantially the same in scope as ECLA classification H01L21/285B6.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.173 Deposition of schottky electrode (epo) 135


Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8659029 Low contact resistance semiconductor structure and method of fabricating the same Feb. 25, 2014
8592298 Fabrication of floating guard rings using selective regrowth Nov. 26, 2013
8519504 Electrode for semiconductor chip and semiconductor chip with the electrode Aug. 27, 2013
8460957 Optical semiconductor device, method for manufacturing optical semiconductor device, and method for manufacturing optical semiconductor apparatus Jun. 11, 2013
8193016 Semiconductor laser device and method of manufacturing the same Jun. 5, 2012
8173469 Fabrication method of light emitting device May. 8, 2012
8093626 Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor Jan. 10, 2012
7993948 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device Aug. 9, 2011
7947521 Method for forming electrode for group-III nitride compound semiconductor light-emitting devices May. 24, 2011
7615868 Electrode, method for producing same and semiconductor device using same Nov. 10, 2009
7592641 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device Sep. 22, 2009
7547909 III-nitride compound semiconductor light emitting device Jun. 16, 2009
7534714 Radial temperature control for lattice-mismatched epitaxy May. 19, 2009
7378351 Method of manufacturing nitride semiconductor device May. 27, 2008
7291278 Electrode forming method Nov. 6, 2007
7055745 Laser scanning method and system employing visible scanning-zone indicators identifying a three-dimensional omni-directional laser scanning volume for package transport Jun. 6, 2006
7049160 Gallium nitride compound semiconductor device and method of manufacturing the same May. 23, 2006
7029939 P-type semiconductor manufacturing method and semiconductor device Apr. 18, 2006
7009218 Nitride semiconductor device Mar. 7, 2006
6998225 Method of producing compound semiconductor device Feb. 14, 2006
6960482 Method of fabricating nitride semiconductor and method of fabricating semiconductor device Nov. 1, 2005
6946313 Method of making an aligned electrode on a semiconductor structure Sep. 20, 2005
6936487 Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture method Aug. 30, 2005
6897137 Process for fabricating ultra-low contact resistances in GaN-based devices May. 24, 2005
6897495 Field effect transistor and manufacturing method therefor May. 24, 2005
6894325 Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers May. 17, 2005
6894391 Electrode structure on P-type III group nitride semiconductor layer and formation method thereof May. 17, 2005
6887311 Method of forming ohmic electrode May. 3, 2005
6858522 Electrical contact for compound semiconductor device and method for forming same Feb. 22, 2005
6852615 Ohmic contacts for high electron mobility transistors and a method of making the same Feb. 8, 2005
6847052 Light-emitting diode device geometry Jan. 25, 2005
6830189 METHOD OF AND SYSTEM FOR PRODUCING DIGITAL IMAGES OF OBJECTS WITH SUBTANTIALLY REDUCED SPECKLE-NOISE PATTERNS BY ILLUMINATING SAID OBJECTS WITH SPATIALLY AND/OR TEMPORALLY COHERENT-REDUCED PLA Dec. 14, 2004
6818467 P-type ohmic electrode in gallium nitride based optical device and fabrication method thereof Nov. 16, 2004
6806571 III nitride compound semiconductor element an electrode forming method Oct. 19, 2004
6791120 Nitride-based semiconductor device and method of fabricating the same Sep. 14, 2004
6774025 Method for producing group III nitride compound semiconductor light-emitting element Aug. 10, 2004
6768146 III-V nitride semiconductor device, and protection element and power conversion apparatus using the same Jul. 27, 2004
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6743702 Nitride-based semiconductor laser device and method of forming the same Jun. 1, 2004
6734091 Electrode for p-type gallium nitride-based semiconductors May. 11, 2004
6705526 AUTOMATED METHOD OF AND SYSTEM FOR DIMENSIONING OBJECTS TRANSPORTED THROUGH A WORK ENVIRONMENT USING CONTOUR TRACING, VERTICE DETECTION, CORNER POINT DETECTION, AND CORNER POINT REDUCTION METH Mar. 16, 2004
6693352 Contact structure for group III-V semiconductor devices and method of producing the same Feb. 17, 2004
6639316 Electrode having substrate and surface electrode components for a semiconductor device Oct. 28, 2003
6629640 Holographic laser scanning method and system employing visible scanning-zone indicators identifying a three-dimensional omni-directional laser scanning volume for package transport navigation Oct. 7, 2003
6614117 Method for metallization of a semiconductor substrate and related structure Sep. 2, 2003
6614115 Enhancement of carrier concentration in As-containing layers Sep. 2, 2003
6596616 Method for forming serrated contact opening in the semiconductor device Jul. 22, 2003
6596635 Method for metallization of a semiconductor substrate Jul. 22, 2003
6586328 Method to metallize ohmic electrodes to P-type group III nitrides Jul. 1, 2003
6583455 Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers Jun. 24, 2003

1 2 3 4 5 6










 
 
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