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Class Information
Number: 257/E21.171
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iv element (epo) > By chemical means, e.g., cvd, lpcvd, pecvd, laser cvd (epo) > Selective deposition (epo)
Description: This subclass is indented under subclass E21.17. This subclass is substantially the same in scope as ECLA classification H01L21/285B4H2.

Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8685850 System and method of plating conductive gate contacts on metal gates for self-aligned contact interconnections Apr. 1, 2014
8680682 Barrier for through-silicon via Mar. 25, 2014
8618003 Method of making electronic devices using selective deposition Dec. 31, 2013
8546257 Electrode arrays and methods of fabricating the same using printing plates to arrange particles in an array Oct. 1, 2013
8517769 Methods of forming copper-based conductive structures on an integrated circuit device Aug. 27, 2013
8513116 Atomic layer deposition of tungsten materials Aug. 20, 2013
8492273 Method for selective deposition of a semiconductor material Jul. 23, 2013
8482043 Method for improving transistor performance through reducing the salicide interface resistance Jul. 9, 2013
8466052 Method of fabricating semiconductor device having buried wiring Jun. 18, 2013
8450197 Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces May. 28, 2013
8344513 Barrier for through-silicon via Jan. 1, 2013
8324098 Via and method of forming the via with a substantially planar top surface that is suitable for carbon nanotube applications Dec. 4, 2012
8278216 Selective capping of copper Oct. 2, 2012
8268724 Alternative to desmear for build-up roughening and copper adhesion promotion Sep. 18, 2012
8258626 Copper interconnection, method for forming copper interconnection structure, and semiconductor device Sep. 4, 2012
8242578 Anti-fuse device structure and electroplating circuit structure and method Aug. 14, 2012
8211799 Atomic layer deposition of tungsten materials Jul. 3, 2012
8207044 Methods for oxidation of a semiconductor device Jun. 26, 2012
8168537 Semiconductor component and assumbly with projecting electrode May. 1, 2012
8168546 Method for selective deposition and devices May. 1, 2012
8101521 Methods for improving uniformity and resistivity of thin tungsten films Jan. 24, 2012
8058729 Titanium nitride films Nov. 15, 2011
8039394 Methods of forming layers of alpha-tantalum Oct. 18, 2011
8003528 Semiconductor structure and method for making the same Aug. 23, 2011
7998878 Method for selective deposition and devices Aug. 16, 2011
7989362 Hafnium lanthanide oxynitride films Aug. 2, 2011
7972961 Purge step-controlled sequence of processing semiconductor wafers Jul. 5, 2011
7972898 Process for making doped zinc oxide Jul. 5, 2011
7964505 Atomic layer deposition of tungsten materials Jun. 21, 2011
7952146 Grain growth promotion layer for semiconductor interconnect structures May. 31, 2011
7915166 Diffusion barrier and etch stop films Mar. 29, 2011
7897494 Formation of single crystal semiconductor nanowires Mar. 1, 2011
7892962 Nail-shaped pillar for wafer-level chip-scale packaging Feb. 22, 2011
7863198 Method and device to vary growth rate of thin films over semiconductor structures Jan. 4, 2011
7851360 Organometallic precursors for seed/barrier processes and methods thereof Dec. 14, 2010
7851380 Process for atomic layer deposition Dec. 14, 2010
7846840 Method for forming tungsten materials during vapor deposition processes Dec. 7, 2010
7829457 Protection of conductors from oxidation in deposition chambers Nov. 9, 2010
7795144 Method for forming electrode structure for use in light emitting device and method for forming stacked structure Sep. 14, 2010
7763538 Dual plasma treatment barrier film to reduce low-k damage Jul. 27, 2010
7745333 Methods for depositing tungsten layers employing atomic layer deposition techniques Jun. 29, 2010
7737028 Selective ruthenium deposition on copper materials Jun. 15, 2010
7727908 Deposition of ZrA1ON films Jun. 1, 2010
7727910 Zirconium-doped zinc oxide structures and methods Jun. 1, 2010
7709385 Method for depositing tungsten-containing layers by vapor deposition techniques May. 4, 2010
7691749 Deposition of tungsten nitride Apr. 6, 2010
7674710 Method of integrating metal-containing films into semiconductor devices Mar. 9, 2010
7674715 Method for forming tungsten materials during vapor deposition processes Mar. 9, 2010
7670941 Method for production of semiconductor devices Mar. 2, 2010
7659626 Semiconductor device including a barrier metal film Feb. 9, 2010

1 2 3 4 5 6 7 8

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