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Class Information
Number: 257/E21.169
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iv element (epo) > By physical means, e.g., sputtering, evaporation (epo)
Description: This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4F.
Patents under this class:
Patent Number |
Title Of Patent |
Date Issued |
8586471 |
Seed layers for metallic interconnects and products |
Nov. 19, 2013 |
8501559 |
Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same |
Aug. 6, 2013 |
8486737 |
Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same |
Jul. 16, 2013 |
8466557 |
Solder bump confinement system for an integrated circuit package |
Jun. 18, 2013 |
8338249 |
Semiconductor device and method for manufacturing the same having improved polarization reversal characteristic |
Dec. 25, 2012 |
8298936 |
Multistep method of depositing metal seed layers |
Oct. 30, 2012 |
8278212 |
Method for manufacturing semiconductor memory element and sputtering apparatus |
Oct. 2, 2012 |
8216933 |
Krypton sputtering of low resistivity tungsten |
Jul. 10, 2012 |
8198104 |
Method of manufacturing a semiconductor device |
Jun. 12, 2012 |
8158511 |
Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features |
Apr. 17, 2012 |
8053364 |
Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer |
Nov. 8, 2011 |
8039394 |
Methods of forming layers of alpha-tantalum |
Oct. 18, 2011 |
8030725 |
Apparatus and methods for detecting evaporation conditions |
Oct. 4, 2011 |
8022448 |
Apparatus and methods for evaporation including test wafer holder |
Sep. 20, 2011 |
8012789 |
Nonvolatile memory device and method of manufacturing the same |
Sep. 6, 2011 |
8008198 |
Large scale method and furnace system for selenization of thin film photovoltaic materials |
Aug. 30, 2011 |
7943506 |
Semiconductor device and production method therefor |
May. 17, 2011 |
7928573 |
Metal thin film for interconnection of semiconductor device |
Apr. 19, 2011 |
7928575 |
Electronic device, method of manufacture of the same, and sputtering target |
Apr. 19, 2011 |
7915157 |
Chip structure and process for forming the same |
Mar. 29, 2011 |
7906433 |
Semiconductor device having wirings formed by damascene and its manufacture method |
Mar. 15, 2011 |
7884032 |
Thin film deposition |
Feb. 8, 2011 |
7855147 |
Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer |
Dec. 21, 2010 |
7846824 |
Methods for forming a titanium nitride layer |
Dec. 7, 2010 |
7816191 |
Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
Oct. 19, 2010 |
7807568 |
Methods for reducing damage to substrate layers in deposition processes |
Oct. 5, 2010 |
7745332 |
PVD-based metallization methods for fabrication of interconnections in semiconductor devices |
Jun. 29, 2010 |
7727890 |
High aspect ratio electroplated metal feature and method |
Jun. 1, 2010 |
7728431 |
Electronic component, semiconductor device employing same, and method for manufacturing electronic component |
Jun. 1, 2010 |
7723225 |
Solder bump confinement system for an integrated circuit package |
May. 25, 2010 |
7700484 |
Method and apparatus for a metallic dry-filling process |
Apr. 20, 2010 |
7700474 |
Barrier deposition using ionized physical vapor deposition (iPVD) |
Apr. 20, 2010 |
7696520 |
Organic thin film transistor, method of manufacturing the same, and organic light emitting display device having the same |
Apr. 13, 2010 |
7682966 |
Multistep method of depositing metal seed layers |
Mar. 23, 2010 |
7682969 |
Method of fabricating semiconductor device |
Mar. 23, 2010 |
7666781 |
Interconnect structures with improved electromigration resistance and methods for forming such interconnect structures |
Feb. 23, 2010 |
7659204 |
Oxidized barrier layer |
Feb. 9, 2010 |
7645696 |
Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer |
Jan. 12, 2010 |
7645698 |
Method for forming barrier layer |
Jan. 12, 2010 |
7611990 |
Deposition methods for barrier and tungsten materials |
Nov. 3, 2009 |
7585762 |
Vapor deposition processes for tantalum carbide nitride materials |
Sep. 8, 2009 |
7576002 |
Multi-step barrier deposition method |
Aug. 18, 2009 |
7572658 |
Method of manufacturing display panel for flexible display device |
Aug. 11, 2009 |
7553763 |
Salicide process utilizing a cluster ion implantation process |
Jun. 30, 2009 |
7381657 |
Biased pulse DC reactive sputtering of oxide films |
Jun. 3, 2008 |
7375024 |
Method for fabricating metal interconnection line with use of barrier metal layer formed in low temperature |
May. 20, 2008 |
7256121 |
Contact resistance reduction by new barrier stack process |
Aug. 14, 2007 |
7214619 |
Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece |
May. 8, 2007 |
7071563 |
Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer |
Jul. 4, 2006 |
7071096 |
Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition |
Jul. 4, 2006 |
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