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Class Information
Number: 257/E21.168
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iv element (epo) > Conductive layer comprising transition metal, e.g., ti, w, mo (epo)
Description: This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4L.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8557625 Zinc oxide film method and structure for cigs cell Oct. 15, 2013
8558350 Metal-oxide-metal capacitor structure Oct. 15, 2013
8513641 Core-shell nanowire comprising silicon rich oxide core and silica shell Aug. 20, 2013
8367546 Methods for forming all tungsten contacts and lines Feb. 5, 2013
8329576 Method for improving uniformity and adhesion of low resistivity tungsten film Dec. 11, 2012
8247301 Substrate and manufacturing method therefor Aug. 21, 2012
8168463 Zinc oxide film method and structure for CIGS cell May. 1, 2012
8159068 Semiconductor device Apr. 17, 2012
8062977 Ternary tungsten-containing resistive thin films Nov. 22, 2011
8053365 Methods for forming all tungsten contacts and lines Nov. 8, 2011
8039394 Methods of forming layers of alpha-tantalum Oct. 18, 2011
8030667 Nitride semiconductor light emitting diode Oct. 4, 2011
8003528 Semiconductor structure and method for making the same Aug. 23, 2011
7989343 Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features Aug. 2, 2011
7989362 Hafnium lanthanide oxynitride films Aug. 2, 2011
7989281 Method for manufacturing dual gate in semiconductor device Aug. 2, 2011
7943506 Semiconductor device and production method therefor May. 17, 2011
7927914 Manufacturing method for semiconductor photoelectrochemical cell and semiconductor photoelectrochemical cell Apr. 19, 2011
7927996 Tungsten-doped indium oxide structures and methods Apr. 19, 2011
7919409 Materials for adhesion enhancement of copper film on diffusion barriers Apr. 5, 2011
7902065 Multi-layered metal line having an improved diffusion barrier of a semiconductor device and method for forming the same Mar. 8, 2011
7867896 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor Jan. 11, 2011
7851808 Nitride semiconductor light emitting diode Dec. 14, 2010
7846840 Method for forming tungsten materials during vapor deposition processes Dec. 7, 2010
7799653 Method for forming capacitor in dynamic random access memory Sep. 21, 2010
7786010 Method for forming a thin layer on semiconductor substrates Aug. 31, 2010
7772114 Method for improving uniformity and adhesion of low resistivity tungsten film Aug. 10, 2010
7754604 Reducing silicon attack and improving resistivity of tungsten nitride film Jul. 13, 2010
7745348 Manufacturing method of a semiconductor device Jun. 29, 2010
7718468 Manufacture method for ZnO-containing compound semiconductor layer May. 18, 2010
7718552 Nanostructured titania May. 18, 2010
7713874 Periodic plasma annealing in an ALD-type process May. 11, 2010
7709386 Atomic layer deposition method and semiconductor device formed by the same May. 4, 2010
7709385 Method for depositing tungsten-containing layers by vapor deposition techniques May. 4, 2010
7709376 Method for fabricating semiconductor device and semiconductor device May. 4, 2010
7674715 Method for forming tungsten materials during vapor deposition processes Mar. 9, 2010
7662717 Method of forming metal layer used in the fabrication of semiconductor device Feb. 16, 2010
7648904 Metal line in semiconductor device and method for forming the same Jan. 19, 2010
7622375 Conductive member and process of producing the same Nov. 24, 2009
7582557 Process for low resistance metal cap Sep. 1, 2009
7563717 Method for fabricating a semiconductor device Jul. 21, 2009
7563730 Hafnium lanthanide oxynitride films Jul. 21, 2009
7550385 Amine-free deposition of metal-nitride films Jun. 23, 2009
7544597 Method of forming a semiconductor device including an ohmic layer Jun. 9, 2009
7544604 Tantalum lanthanide oxynitride films Jun. 9, 2009
7514358 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor Apr. 7, 2009
7501343 Formation of boride barrier layers using chemisorption techniques Mar. 10, 2009
7501344 Formation of boride barrier layers using chemisorption techniques Mar. 10, 2009
7473637 ALD formed titanium nitride films Jan. 6, 2009
7465665 Method for depositing tungsten-containing layers by vapor deposition techniques Dec. 16, 2008

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