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Class Information
Number: 257/E21.167
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iv element (epo) > Conductive layer comprising semiconducting material (epo) > Making of side-wall contact (epo)
Description: This subclass is indented under subclass E21.166. This subclass is substantially the same in scope as ECLA classification H01L21/285B4B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8258054 Method for fabricating semiconductor device Sep. 4, 2012
7838983 Packaged semiconductor device and method of manufacturing the packaged semiconductor device Nov. 23, 2010
7812415 Apparatus having gate structure and source/drain over semiconductor substrate Oct. 12, 2010
7633126 Semiconductor device having a shared contact and method of fabricating the same Dec. 15, 2009
7226854 Methods of forming metal lines in semiconductor devices Jun. 5, 2007
7169677 Method for producing a spacer structure Jan. 30, 2007
7002194 Via AP switching Feb. 21, 2006
5065210 Lateral transistor structure for bipolar semiconductor integrated circuits Nov. 12, 1991
4903112 Semiconductor component with contact hole Feb. 20, 1990
4857479 Method of making poly-sidewall contact transistors Aug. 15, 1989
4824799 Method of making a bipolar semiconductor device Apr. 25, 1989
4764801 Poly-sidewall contact transistors Aug. 16, 1988
4757027 Method for fabricating improved oxide defined transistors Jul. 12, 1988
4710241 Method of making a bipolar semiconductor device Dec. 1, 1987
4696097 Poly-sidewall contact semiconductor device method Sep. 29, 1987
4663831 Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers May. 12, 1987











 
 
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