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Class Information
Number: 257/E21.166
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iv element (epo) > Conductive layer comprising semiconducting material (epo)
Description: This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7381612 |
Method for manufacturing semiconductor device with recess channels and asymmetrical junctions |
Jun. 3, 2008 |
| 7374977 |
Droplet discharge device, and method for forming pattern, and method for manufacturing display device |
May. 20, 2008 |
| 7361597 |
Semiconductor device and method of fabricating the same |
Apr. 22, 2008 |
| 7319068 |
Method of depositing low k barrier layers |
Jan. 15, 2008 |
| 7314792 |
Method for fabricating transistor of semiconductor device |
Jan. 1, 2008 |
| 7307018 |
Method of fabricating conductive lines |
Dec. 11, 2007 |
| 7226854 |
Methods of forming metal lines in semiconductor devices |
Jun. 5, 2007 |
| 7205208 |
Method of manufacturing a semiconductor device |
Apr. 17, 2007 |
| 7199043 |
Method of forming copper wiring in semiconductor device |
Apr. 3, 2007 |
| 7148143 |
Semiconductor device having a fully silicided gate electrode and method of manufacture therefor |
Dec. 12, 2006 |
| 7119030 |
Process for lining a surface using an organic film |
Oct. 10, 2006 |
| 7112512 |
Method of manufacturing liquid crystal display |
Sep. 26, 2006 |
| 7109115 |
Methods of providing ohmic contact |
Sep. 19, 2006 |
| 7074684 |
Elevated source drain disposable spacer CMOS |
Jul. 11, 2006 |
| 7049231 |
Methods of forming capacitors |
May. 23, 2006 |
| 7049230 |
Method of forming a contact plug in a semiconductor device |
May. 23, 2006 |
| 7037775 |
Applying epitaxial silicon in disposable spacer flow |
May. 2, 2006 |
| 7009257 |
Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad an |
Mar. 7, 2006 |
| 6979611 |
Method for fabricating semiconductor device |
Dec. 27, 2005 |
| 6958253 |
Process for deposition of semiconductor films |
Oct. 25, 2005 |
| 6953741 |
Methods of fabricating contacts for semiconductor devices utilizing a pre-flow process |
Oct. 11, 2005 |
| 6933228 |
Method of manufacturing of contact plug in a contact hole on a silicon substrate |
Aug. 23, 2005 |
| 6914309 |
Semiconductor device with double sidewall spacer and layered contact |
Jul. 5, 2005 |
| 6908853 |
Method of fabricating a semiconductor device having reduced contact resistance |
Jun. 21, 2005 |
| 6900130 |
Method for locally heating a region in a semiconductor substrate |
May. 31, 2005 |
| 6900143 |
Strained silicon MOSFETs having improved thermal dissipation |
May. 31, 2005 |
| 6900115 |
Deposition over mixed substrates |
May. 31, 2005 |
| 6890826 |
Method of making bipolar transistor with integrated base contact and field plate |
May. 10, 2005 |
| 6891244 |
Plug structure having low contact resistance and method of manufacturing |
May. 10, 2005 |
| 6881622 |
Aqueous ammonium hydroxide amorphous silicon etch method for forming microelectronic capacitor structure |
Apr. 19, 2005 |
| 6878592 |
Selective epitaxy to improve silicidation |
Apr. 12, 2005 |
| 6879044 |
Structure for contact formation using a silicon-germanium alloy |
Apr. 12, 2005 |
| 6875558 |
Integration scheme using self-planarized dielectric layer for shallow trench isolation (STI) |
Apr. 5, 2005 |
| 6867113 |
In-situ deposition and doping process for polycrystalline silicon layers and the resulting device |
Mar. 15, 2005 |
| 6858529 |
Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus |
Feb. 22, 2005 |
| 6858903 |
MOSFET device with in-situ doped, raised source and drain structures |
Feb. 22, 2005 |
| 6858534 |
Method of manufacturing a multilayered doped conductor for a contact in an integrated device |
Feb. 22, 2005 |
| 6844259 |
Method for forming contact plug in semiconductor device |
Jan. 18, 2005 |
| 6835656 |
Method of forming ultra-shallow junctions in a semiconductor wafer with a deposited silicon layer and in-situ anneal to reduce silicon consumption during salicidation |
Dec. 28, 2004 |
| 6831324 |
Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by the same |
Dec. 14, 2004 |
| 6828616 |
Integrated circuit devices that utilize doped Poly-Si1-xGex conductive plugs as interconnects |
Dec. 7, 2004 |
| 6821875 |
Low area metal contacts for photovoltaic devices |
Nov. 23, 2004 |
| 6821825 |
Process for deposition of semiconductor films |
Nov. 23, 2004 |
| 6806572 |
Structure for contact formation using a silicon-germanium alloy |
Oct. 19, 2004 |
| 6803317 |
Method of making a vertical gate semiconductor device |
Oct. 12, 2004 |
| 6800544 |
Semiconductor device having a metal-semiconductor junction with a reduced contact resistance |
Oct. 5, 2004 |
| 6797571 |
Method of manufacturing semiconductor device |
Sep. 28, 2004 |
| 6797558 |
Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer |
Sep. 28, 2004 |
| 6794713 |
Semiconductor device and method of manufacturing the same including a dual layer raised source and drain |
Sep. 21, 2004 |
| 6780786 |
Method for producing a porous silicon film |
Aug. 24, 2004 |
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