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Class Information
Number: 257/E21.165
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iv element (epo) > Conductive layer comprising silicide (epo)
Description: This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4A.

Patents under this class:

Patent Number Title Of Patent Date Issued
8642471 Semiconductor structure and method for manufacturing the same Feb. 4, 2014
8637925 Nickel-silicide formation with differential Pt composition Jan. 28, 2014
8598643 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 3, 2013
8580680 Metal silicide formation Nov. 12, 2013
8551836 Semiconductor device and method of manufacturing the same Oct. 8, 2013
8524564 Full silicidation prevention via dual nickel deposition approach Sep. 3, 2013
8513765 Formation method and structure for a well-controlled metallic source/drain semiconductor device Aug. 20, 2013
8492216 Semiconductor structure with contact structure and manufacturing method of the same Jul. 23, 2013
8486828 Semiconductor device manufacturing method Jul. 16, 2013
8482043 Method for improving transistor performance through reducing the salicide interface resistance Jul. 9, 2013
8470628 Methods to fabricate silicide micromechanical device Jun. 25, 2013
8466064 Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit device Jun. 18, 2013
8445372 Selective silicide formation using resist etch back May. 21, 2013
8440523 Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch May. 14, 2013
8404589 Silicide contact formation Mar. 26, 2013
8377812 SiC MOSFETs and self-aligned fabrication methods thereof Feb. 19, 2013
8338292 Body contacts for FET in SOI SRAM array Dec. 25, 2012
8324115 Semiconductor chip, semiconductor device and methods for producing the same Dec. 4, 2012
8299542 MOSFET with multiple fully silicided gate and method for making the same Oct. 30, 2012
8247319 Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions Aug. 21, 2012
8211796 Semiconductor device manufacturing method Jul. 3, 2012
8202799 Methods of manufacturing metal-silicide features Jun. 19, 2012
8158519 Method of manufacturing non-volatile memory cell using self-aligned metal silicide Apr. 17, 2012
8143651 Nested and isolated transistors with reduced impedance difference Mar. 27, 2012
8114741 Oxygen-rich layers underlying BPSG Feb. 14, 2012
8080472 Metal line having a Mo.sub.xSi.sub.y/Mo diffusion barrier of semiconductor device and method for forming the same Dec. 20, 2011
8062973 Semiconductor device manufacturing method Nov. 22, 2011
8021982 Method of silicide formation by adding graded amount of impurity during metal deposition Sep. 20, 2011
8021934 Method for making a transistor with metallic source and drain Sep. 20, 2011
7989281 Method for manufacturing dual gate in semiconductor device Aug. 2, 2011
7981795 Semiconductor device manufacturing method Jul. 19, 2011
7981781 Metal line of semiconductor device having a diffusion barrier and method for forming the same Jul. 19, 2011
7981735 Method of manufacturing a Schottky barrier tunnel transistor Jul. 19, 2011
7977182 Method of manufacturing MISFET with low contact resistance Jul. 12, 2011
7968463 Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer Jun. 28, 2011
7932127 Method of making CMOS image sensor-hybrid silicide Apr. 26, 2011
7923838 Method and structure for reducing contact resistance between silicide contact and overlying metallization Apr. 12, 2011
7897425 Image sensor and method for fabricating the same Mar. 1, 2011
7867901 Method for forming silicide in semiconductor device Jan. 11, 2011
7863192 Methods for full gate silicidation of metal gate structures Jan. 4, 2011
7858517 Method of manufacturing semiconductor device, and semiconductor device Dec. 28, 2010
7851316 Fabrication method of semiconductor device Dec. 14, 2010
7816218 Selective deposition of amorphous silicon films on metal gates Oct. 19, 2010
7803703 Metal-germanium physical vapor deposition for semiconductor device defect reduction Sep. 28, 2010
7781316 Methods of manufacturing metal-silicide features Aug. 24, 2010
7767577 Nested and isolated transistors with reduced impedance difference Aug. 3, 2010
7741171 Oxygen-rich layers underlying BPSG Jun. 22, 2010
7737512 Integrated circuit devices having uniform silicide junctions Jun. 15, 2010
7737019 Method for containing a silicided gate within a sidewall spacer in integrated circuit technology Jun. 15, 2010
7732327 Vapor deposition of tungsten materials Jun. 8, 2010

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