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Class Information
Number: 257/E21.164
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iv element (epo) > O layer comprising silicide (epo)
Description: This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8586404 Method for reducing contact resistance of CMOS image sensor Nov. 19, 2013
8513765 Formation method and structure for a well-controlled metallic source/drain semiconductor device Aug. 20, 2013
8247319 Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions Aug. 21, 2012
8129821 Reacted conductive gate electrodes Mar. 6, 2012
7994624 Integrated circuit package system with adhesive segment spacer Aug. 9, 2011
7977182 Method of manufacturing MISFET with low contact resistance Jul. 12, 2011
7863191 Manufacturing method of semiconductor device Jan. 4, 2011
7550832 Stackable semiconductor package Jun. 23, 2009
7446042 Method for silicide formation on semiconductor devices Nov. 4, 2008
7446043 Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device Nov. 4, 2008











 
 
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