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Class Information
Number: 257/E21.163
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo) > Of conductive layer (epo) > On semiconductor body comprising group iv element (epo) > Deposition of schottky electrode (epo)
Description: This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8647971 Method of manufacturing junction barrier schottky diode with dual silicides Feb. 11, 2014
8328585 Modulated deposition process for stress control in thick TiN films Dec. 11, 2012
8101511 Method of manufacturing a junction barrier Schottky diode with dual silicides Jan. 24, 2012
7999266 Semiconductor device including poly-Si and method of manufacturing the same Aug. 16, 2011
7977182 Method of manufacturing MISFET with low contact resistance Jul. 12, 2011
7893467 Silicon carbide semiconductor device having junction barrier Schottky diode Feb. 22, 2011
7816240 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Oct. 19, 2010
7767481 Image sensor and method for manufacturing the same Aug. 3, 2010
7754550 Process for forming thick oxides on Si or SiC for semiconductor devices Jul. 13, 2010
7514360 Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof Apr. 7, 2009
7361555 Trench-gate transistors and their manufacture Apr. 22, 2008
7355246 Memory cell without halo implant Apr. 8, 2008
7247550 Silicon carbide-based device contact and contact fabrication method Jul. 24, 2007
6977414 Semiconductor device Dec. 20, 2005
6833556 Insulated gate field effect transistor having passivated schottky barriers to the channel Dec. 21, 2004
6825073 Schottky diode with high field breakdown and low reverse leakage current Nov. 30, 2004
6656843 Single mask trench fred with enlarged Schottky area Dec. 2, 2003
6475926 Substrate for high frequency integrated circuits Nov. 5, 2002
6423598 Semiconductor device, a method of manufacturing the same, and a semiconductor device protective circuit Jul. 23, 2002
6346465 Semiconductor device with silicide contact structure and fabrication method thereof Feb. 12, 2002
6201291 Semiconductor device and method of manufacturing such a device Mar. 13, 2001
6183857 Substrate for high frequency integrated circuits Feb. 6, 2001
6140214 Semiconductor processing methods, semiconductor processing methods of forming diodes, and semiconductor processing methods of forming schottky diodes Oct. 31, 2000
6096629 Uniform sidewall profile etch method for forming low contact leakage schottky diode contact Aug. 1, 2000
6093638 Method of forming an electrical contact in a substrate Jul. 25, 2000
5883398 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering Mar. 16, 1999
5846860 Method of making buried contact in DRAM technology Dec. 8, 1998
5751016 Device having a switch comprising a chromium layer May. 12, 1998
5635414 Low cost method of fabricating shallow junction, Schottky semiconductor devices Jun. 3, 1997
5569614 Method of forming metal pattern including a schottky diode Oct. 29, 1996
5552339 Furnace amorphous-SI cap layer to prevent tungsten volcano effect Sep. 3, 1996
5525829 Field effect transistor with integrated schottky diode clamp Jun. 11, 1996
5438218 Semiconductor device with Shottky junction Aug. 1, 1995
5323053 Semiconductor devices using epitaxial silicides on (111) surfaces etched in (100) silicon substrates Jun. 21, 1994
5221638 Method of manufacturing a Schottky barrier semiconductor device Jun. 22, 1993
5155559 High temperature refractory silicide rectifying contact Oct. 13, 1992
5087322 Selective metallization for high temperature semiconductors Feb. 11, 1992
5086014 Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film Feb. 4, 1992
5024954 Method of improving high temperature stability of PTSI/SI structure Jun. 18, 1991
4984037 Semiconductor device with conductive rectifying rods Jan. 8, 1991
4946803 Method for manufacturing a Schottky-type rectifier having controllable barrier height Aug. 7, 1990
4875082 Schottky barrier photodiode structure Oct. 17, 1989
4864378 Schottky barrier infrared detector Sep. 5, 1989
4862244 Semiconductor device having Schottky barrier between metal silicide and silicon Aug. 29, 1989
4816879 Schottky-type rectifier having controllable barrier height Mar. 28, 1989
4803539 Dopant control of metal silicide formation Feb. 7, 1989
4755484 Method of making a semimetal semiconductor contact Jul. 5, 1988
4742017 Implantation method for forming Schottky barrier photodiodes May. 3, 1988
4724223 Method of making electrical contacts Feb. 9, 1988
4720734 Low loss and high speed diodes Jan. 19, 1988

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