| |
 |
|
Class Information
Number: 257/E21.16
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo)
Description: This subclass is indented under subclass E21.159. This subclass is substantially the same in scope as ECLA classification H01L21/285.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7541280 |
Method of foming a micromechanical structure |
Jun. 2, 2009 |
| 7465676 |
Method for forming dielectric film to improve adhesion of low-k film |
Dec. 16, 2008 |
| 7427516 |
Method for patching up thin-film transistor circuits on a display panel by local thin-film deposition |
Sep. 23, 2008 |
| 7407892 |
Deposition methods |
Aug. 5, 2008 |
| 7262142 |
Semiconductor device fabrication method |
Aug. 28, 2007 |
| 7256499 |
Ultra low dielectric constant integrated circuit system |
Aug. 14, 2007 |
| 7214618 |
Technique for high efficiency metalorganic chemical vapor deposition |
May. 8, 2007 |
| 7214631 |
Method of forming gate dielectric layer |
May. 8, 2007 |
| 7163899 |
Localized energy pulse rapid thermal anneal dielectric film densification method |
Jan. 16, 2007 |
| 7112539 |
Dielectric layer for semiconductor device and method of manufacturing the same |
Sep. 26, 2006 |
| 5808315 |
Thin film transistor having transparent conductive film |
Sep. 15, 1998 |
| 5677240 |
Method for forming a semiconductor device |
Oct. 14, 1997 |
| 5664369 |
Plant growing room |
Sep. 9, 1997 |
| 5580823 |
Process for fabricating a collimated metal layer and contact structure in a semiconductor device |
Dec. 3, 1996 |
| 5514622 |
Method for the formation of interconnects and landing pads having a thin, conductive film underlying the plug or an associated contact of via hole |
May. 7, 1996 |
| 5502004 |
Method for manufacturing a semiconductor device with heat treated diffusion layers |
Mar. 26, 1996 |
| 5420056 |
Junction contact process and structure for semiconductor technologies |
May. 30, 1995 |
| 5278100 |
Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers |
Jan. 11, 1994 |
| 5236868 |
Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system |
Aug. 17, 1993 |
| 5232873 |
Method of fabricating contacts for semiconductor devices |
Aug. 3, 1993 |
| 5166770 |
Silicided structures having openings therein |
Nov. 24, 1992 |
| 4770948 |
High-purity metal and metal silicide target for LSI electrodes |
Sep. 13, 1988 |
| 4650698 |
Method of forming a thin film of a metal or metal compound on a substrate |
Mar. 17, 1987 |
| 4619695 |
Process for producing high-purity metal targets for LSI electrodes |
Oct. 28, 1986 |
| 4155155 |
Method of manufacturing power semiconductors with pressed contacts |
May. 22, 1979 |
| 3996658 |
Process for producing semiconductor memory device |
Dec. 14, 1976 |
|
|
|
