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Class Information
Number: 257/E21.16
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (epo) > Deposition of conductive or insulating material for electrode conducting electric current (epo) > From a gas or vapor, e.g., condensation (epo)
Description: This subclass is indented under subclass E21.159. This subclass is substantially the same in scope as ECLA classification H01L21/285.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.161 Of conductive layer (epo) 33


Patents under this class:

Patent Number Title Of Patent Date Issued
8609551 Method for manufacturing semiconductor device and substrate processing apparatus Dec. 17, 2013
8546247 Manufacturing method of semiconductor device with amorphous silicon layer formation Oct. 1, 2013
8513116 Atomic layer deposition of tungsten materials Aug. 20, 2013
8501268 Methods of forming material over a substrate and methods of forming capacitors Aug. 6, 2013
8481382 Method and apparatus for manufacturing semiconductor device Jul. 9, 2013
8202808 Methods of forming strontium titanate films Jun. 19, 2012
8163634 Devices with graphene layers Apr. 24, 2012
8133811 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium Mar. 13, 2012
8101521 Methods for improving uniformity and resistivity of thin tungsten films Jan. 24, 2012
8093144 Patterning of nanostructures Jan. 10, 2012
8039374 Method for low temperature ion implantation Oct. 18, 2011
7951711 Metal precursors for semiconductor applications May. 31, 2011
7737536 Capacitive techniques to reduce noise in high speed interconnections Jun. 15, 2010
7732350 Chemical vapor deposition of TiN films in a batch reactor Jun. 8, 2010
7709386 Atomic layer deposition method and semiconductor device formed by the same May. 4, 2010
7674728 Deposition from liquid sources Mar. 9, 2010
7655564 Method for forming Ta-Ru liner layer for Cu wiring Feb. 2, 2010
7541280 Method of foming a micromechanical structure Jun. 2, 2009
7465676 Method for forming dielectric film to improve adhesion of low-k film Dec. 16, 2008
7427516 Method for patching up thin-film transistor circuits on a display panel by local thin-film deposition Sep. 23, 2008
7407892 Deposition methods Aug. 5, 2008
7262142 Semiconductor device fabrication method Aug. 28, 2007
7256499 Ultra low dielectric constant integrated circuit system Aug. 14, 2007
7214618 Technique for high efficiency metalorganic chemical vapor deposition May. 8, 2007
7214631 Method of forming gate dielectric layer May. 8, 2007
7163899 Localized energy pulse rapid thermal anneal dielectric film densification method Jan. 16, 2007
7112539 Dielectric layer for semiconductor device and method of manufacturing the same Sep. 26, 2006
5808315 Thin film transistor having transparent conductive film Sep. 15, 1998
5677240 Method for forming a semiconductor device Oct. 14, 1997
5664369 Plant growing room Sep. 9, 1997
5580823 Process for fabricating a collimated metal layer and contact structure in a semiconductor device Dec. 3, 1996
5514622 Method for the formation of interconnects and landing pads having a thin, conductive film underlying the plug or an associated contact of via hole May. 7, 1996
5502004 Method for manufacturing a semiconductor device with heat treated diffusion layers Mar. 26, 1996
5420056 Junction contact process and structure for semiconductor technologies May. 30, 1995
5278100 Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers Jan. 11, 1994
5236868 Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system Aug. 17, 1993
5232873 Method of fabricating contacts for semiconductor devices Aug. 3, 1993
5166770 Silicided structures having openings therein Nov. 24, 1992
4770948 High-purity metal and metal silicide target for LSI electrodes Sep. 13, 1988
4650698 Method of forming a thin film of a metal or metal compound on a substrate Mar. 17, 1987
4619695 Process for producing high-purity metal targets for LSI electrodes Oct. 28, 1986
4155155 Method of manufacturing power semiconductors with pressed contacts May. 22, 1979
3996658 Process for producing semiconductor memory device Dec. 14, 1976











 
 
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