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Class Information
Number: 257/E21.155
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Alloying of impurity material, e.g., doping material, electrode material, with a semiconductor body (epo) > Alloying of doping material with group iii-v compound (epo)
Description: This subclass is indented under subclass E21.154. This subclass is substantially the same in scope as ECLA classification H01L21/24B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8623683 Method of fabricating a nitride semiconductor light emitting device Jan. 7, 2014
8455370 Transfer of high temperature wafers Jun. 4, 2013
8415180 Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device Apr. 9, 2013
8153536 Transfer of high temperature wafers Apr. 10, 2012
7968893 Semiconductor light emitting device and method of manufacturing the same Jun. 28, 2011
7842595 Fabricating electronic-photonic devices having an active layer with spherical quantum dots Nov. 30, 2010
7557007 Method for manufacturing semiconductor device Jul. 7, 2009
7550368 Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device Jun. 23, 2009
7235486 Method for forming tungsten materials during vapor deposition processes Jun. 26, 2007
7115494 Method and system for controlling the presence of fluorine in refractory metal layers Oct. 3, 2006
6806571 III nitride compound semiconductor element an electrode forming method Oct. 19, 2004
4321749 Method for producing superconductors Mar. 30, 1982
4310570 Field-effect transistors with micron and submicron gate lengths Jan. 12, 1982
4025944 Ohmic contracts to p-type indium phosphide May. 24, 1977
3984261 Ohmic contact Oct. 5, 1976
3936319 Solar cell Feb. 3, 1976











 
 
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