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Class Information
Number: 257/E21.154
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Alloying of impurity material, e.g., doping material, electrode material, with a semiconductor body (epo)
Description: This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/24.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.155 Alloying of doping material with group iii-v compound (epo) 16
257/E21.156 Alloying of electrode material (epo) 21

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8455370 Transfer of high temperature wafers Jun. 4, 2013
8153536 Transfer of high temperature wafers Apr. 10, 2012
8076210 Method for fabricating metal-oxide semiconductor transistors Dec. 13, 2011
8053847 Method for fabricating metal-oxide semiconductor transistors Nov. 8, 2011
7892909 Polysilicon gate formation by in-situ doping Feb. 22, 2011
7820532 Methods for simultaneously forming doped regions having different conductivity-determining type element profiles Oct. 26, 2010
7700954 Transistor, method of fabricating the same and organic light emitting display including the transistor Apr. 20, 2010
7696000 Low defect Si:C layer with retrograde carbon profile Apr. 13, 2010
7633131 MEMS semiconductor sensor device Dec. 15, 2009
7338831 Method of fabricating semiconductor probe with resistive tip Mar. 4, 2008
7166505 Method for making a semiconductor device having a high-k gate dielectric Jan. 23, 2007
6849918 Miniaturized dielectrically isolated solid state device Feb. 1, 2005
5532183 Semiconductor device having heavily doped silicon film Jul. 2, 1996
5486263 Etching a diamond body with a molten or partially molten metal Jan. 23, 1996
5480811 Isolation of photogenerated carriers within an originating collecting region Jan. 2, 1996
5082793 Method for making solid state device utilizing ion implantation techniques Jan. 21, 1992
4984037 Semiconductor device with conductive rectifying rods Jan. 8, 1991
4946800 Method for making solid-state device utilizing isolation grooves Aug. 7, 1990
4916513 Dielectrically isolated integrated circuit structure Apr. 10, 1990
4771010 Energy beam induced layer disordering (EBILD) Sep. 13, 1988
4720308 Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby Jan. 19, 1988
4690714 Method of making active solid state devices Sep. 1, 1987
4618380 Method of fabricating an imaging X-ray spectrometer Oct. 21, 1986
4595428 Method for producing high-aspect ratio hollow diffused regions in a semiconductor body Jun. 17, 1986
4585493 Grain-driven zone-melting of silicon films on insulating substrates Apr. 29, 1986
4523067 Temperature gradient zone melting apparatus Jun. 11, 1985
4519850 Process for the thermo-migration of liquid phases May. 28, 1985
4411060 Method of manufacturing dielectrically-isolated single-crystal semiconductor substrates Oct. 25, 1983
4398974 Temperature gradient zone melting process employing a buffer layer Aug. 16, 1983
4394183 Solidification of molten materials Jul. 19, 1983
4377423 Liquid metal inclusion migration by means of an electrical potential gradient Mar. 22, 1983
4371406 Solid-state device Feb. 1, 1983
4370179 Method of making a monolithic complementary Darlington amplifier utilizing diffusion and epitaxial decomposition Jan. 25, 1983
4359486 Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation Nov. 16, 1982
4297717 Semiconductor device Oct. 27, 1981
4293451 Screenable contact structure and method for semiconductor devices Oct. 6, 1981
4275410 Three-dimensionally structured microelectronic device Jun. 23, 1981
4261002 Monolithic complementary darlington Apr. 7, 1981
4257824 Photo-induced temperature gradient zone melting Mar. 24, 1981
4233934 Guard ring for TGZM processing Nov. 18, 1980
4232326 Chemically sensitive field effect transistor having electrode connections Nov. 4, 1980
4219448 Screenable contact structure and method for semiconductor devices Aug. 26, 1980
4207670 Method for making a solid state neuron Jun. 17, 1980
4199379 Method for producing metal patterns on silicon wafers for thermomigration Apr. 22, 1980
4198247 Sealant films for materials having high intrinsic vapor pressure Apr. 15, 1980
4190467 Semiconductor device production Feb. 26, 1980
4184897 Droplet migration doping using carrier droplets Jan. 22, 1980
4180416 Thermal migration-porous silicon technique for forming deep dielectric isolation Dec. 25, 1979
4178192 Promotion of surface film stability during initiation of thermal migration Dec. 11, 1979
4171990 Migration of uniform fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface Oct. 23, 1979

1 2 3

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