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Class Information
Number: 257/E21.153
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a solid from or into a liquid phase, e.g., alloy diffusion process (epo)
Description: This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/228.

Patents under this class:

Patent Number Title Of Patent Date Issued
8685810 Power layout for integrated circuits Apr. 1, 2014
8421205 Power layout for integrated circuits Apr. 16, 2013
8216940 Method for manufacturing a semiconductor device Jul. 10, 2012
7892976 Semiconductor device and method for manufacturing the same Feb. 22, 2011
7842554 VLSI hot-spot minimization using nanotubes Nov. 30, 2010
7763530 Doping of particulate semiconductor materials Jul. 27, 2010
7727868 Apparatus and method for controlling diffusion Jun. 1, 2010
7635860 Manufacturing method of organic thin-film transistors and equipment for manufacturing the same Dec. 22, 2009
7611920 Photonic coupling scheme for photodetectors Nov. 3, 2009
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7001455 Method and apparatus for doping semiconductors Feb. 21, 2006
6737340 Method and apparatus for self-doping contacts to a semiconductor May. 18, 2004
6703295 Method and apparatus for self-doping contacts to a semiconductor Mar. 9, 2004
6664631 Apparatus for self-doping contacts to a semiconductor Dec. 16, 2003
6632730 Method for self-doping contacts to a semiconductor Oct. 14, 2003
6383286 Method of making semiconductor super-atom and aggregate thereof May. 7, 2002
6365493 Method for antimony and boron doping of spherical semiconductors Apr. 2, 2002
4364778 Formation of multilayer dopant distributions in a semiconductor Dec. 21, 1982
4211587 Process for producing a metal to compound semiconductor contact having a potential barrier of predetermined height Jul. 8, 1980
4157559 Coaxial nuclear radiation detector with deep junction and radial field gradient Jun. 5, 1979
4060432 Method for manufacturing nuclear radiation detector with deep diffused junction Nov. 29, 1977
4024029 Electrodeposition May. 17, 1977
4021269 Post diffusion after temperature gradient zone melting May. 3, 1977
3972741 Multiple p-n junction formation with an alloy droplet Aug. 3, 1976

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