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Class Information
Number: 257/E21.152
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (epo) > Diffusion into or out of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.144. This subclass is substantially the same in scope as ECLA classification H01L21/225B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8497208 Semiconductor device and method for manufacturing the same Jul. 30, 2013
8450130 Method of manufacturing a semiconductor laser May. 28, 2013
7998877 Diffraction grating in conjunction with reduced thickness to increase efficiency of solar cells Aug. 16, 2011
7816279 Semiconductor device and method for manufacturing the same Oct. 19, 2010
7732301 Bonded intermediate substrate and method of making same Jun. 8, 2010
7713770 Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby May. 11, 2010
7611920 Photonic coupling scheme for photodetectors Nov. 3, 2009
7452785 Method of fabrication of highly heat dissipative substrates Nov. 18, 2008
7439609 Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures Oct. 21, 2008
7439165 Method of fabricating tensile strained layers and compressive strain layers for a CMOS device Oct. 21, 2008
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7282428 Method for solid phase diffusion of zinc into an InP-based photodiode and an InP photodiode made with the method Oct. 16, 2007
7041519 Method for producing p-type group III nitride compound semiconductor May. 9, 2006
7008859 Wafer and method of producing a substrate by transfer of a layer that includes foreign species Mar. 7, 2006
6955858 Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same Oct. 18, 2005
6897132 Method of reducing the conductivity of a semiconductor and devices made thereby May. 24, 2005
6815730 Nitride-based semiconductor light-emitting device Nov. 9, 2004
6686217 Compound semiconductor device manufacturing method Feb. 3, 2004
6541796 Opto-electronic device with self-aligned ohmic contact layer Apr. 1, 2003
6531379 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Mar. 11, 2003
6489635 Epitaxially grown p-type diffusion source for photodiode fabrication Dec. 3, 2002
6444552 Method of reducing the conductivity of a semiconductor and devices made thereby Sep. 3, 2002
6291328 Opto-electronic device with self-aligned ohmic contact layer Sep. 18, 2001
6251755 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Jun. 26, 2001
5888890 Method of manufacturing field effect transistor Mar. 30, 1999
5700714 Diffusion mask and fabrication method for forming pn-junction elements in a compound semiconductor substrate Dec. 23, 1997
5656511 Manufacturing method for semiconductor device Aug. 12, 1997
5557141 Method of doping, semiconductor device, and method of fabricating semiconductor device Sep. 17, 1996
5352628 Method of forming diffusion region of semiconductor device by solid phase diffusion Oct. 4, 1994
5350709 Method of doping a group III-V compound semiconductor Sep. 27, 1994
5314833 Method of manufacturing GaAs metal semiconductor field effect transistor May. 24, 1994
5296394 Manufacturing method of GaAs metal semiconductor FET Mar. 22, 1994
5275969 Semiconductor laser Jan. 4, 1994
5248626 Method for fabricating self-aligned gate diffused junction field effect transistor Sep. 28, 1993
5225370 Method of diffusing P type impurity Jul. 6, 1993
5196369 Method of producing a light emitting diode array device Mar. 23, 1993
5188978 Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer Feb. 23, 1993
5182229 Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor Jan. 26, 1993
5162256 Process for producing doped semiconductor layers Nov. 10, 1992
5126281 Diffusion using a solid state source Jun. 30, 1992
5122478 Impurity diffusion method Jun. 16, 1992
5119150 Compound semiconductor structure including layer limiting silicon diffusion Jun. 2, 1992
5116781 Zinc diffusion process May. 26, 1992
5047366 Method of diffusing silicon into compound semiconductors and compound semiconductor devices Sep. 10, 1991
5027187 Polycrystalline silicon ohmic contacts to group III-arsenide compound semiconductors Jun. 25, 1991
5023199 Method of diffusing Zn into compound semiconductor Jun. 11, 1991
4865923 Selective intermixing of layered structures composed of thin solid films Sep. 12, 1989
4843033 Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source Jun. 27, 1989
4824798 Method of introducing impurity species into a semiconductor structure from a deposited source Apr. 25, 1989
4774195 Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of ac Sep. 27, 1988

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