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Class Information
Number: 257/E21.149
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (epo) > Diffusion into or out of group iv semiconductor (epo) > From or through or into an applied layer, e.g., photoresist, nitride (epo) > Applied layer is oxide, e.g., p 2 o 5 , psg, h 3 bo 3 , doped oxide (epo)
Description: This subclass is indented under subclass E21.148. This subclass is substantially the same in scope as ECLA classification H01L21/225A4D.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.15 Through the applied layer (epo) 47


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8618615 Semiconductor device and fabrication method thereof Dec. 31, 2013
8598623 Nanotube semiconductor devices and nanotube termination structures Dec. 3, 2013
8394714 Anti-reflective coatings for micro-fluid applications Mar. 12, 2013
8134217 Bypass diode for a solar cell Mar. 13, 2012
8129778 Semiconductor devices and methods for making the same Mar. 6, 2012
8119485 Semiconductor device and fabrication method thereof Feb. 21, 2012
8093124 Method of manufacturing nonvolatile memory device Jan. 10, 2012
7821100 Semiconductor device and method for manufacturing the same Oct. 26, 2010
7790568 Method for fabricating semiconductor device Sep. 7, 2010
7732861 Trench MOS type silicon carbide semiconductor device Jun. 8, 2010
7732311 Methods of manufacturing semiconductor devices Jun. 8, 2010
7667258 Double-sided container capacitors using a sacrificial layer Feb. 23, 2010
7667289 Fuse structure having a tortuous metal fuse line Feb. 23, 2010
7618867 Method of forming a doped portion of a semiconductor and method of forming a transistor Nov. 17, 2009
7572708 Utilization of doped glass on the sidewall of the emitter window in a bipolar transistor structure Aug. 11, 2009
7566600 SOI device with reduced drain induced barrier lowering Jul. 28, 2009
7479434 Semiconductor device and method of manufacturing the same Jan. 20, 2009
7435628 Method of forming a vertical MOS transistor Oct. 14, 2008
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7205588 Metal fuse for semiconductor devices Apr. 17, 2007
7189620 Semiconductor device including a channel stop structure and method of manufacturing the same Mar. 13, 2007
7087503 Shallow self isolated doped implanted silicon process Aug. 8, 2006
7067376 High voltage power MOSFET having low on-resistance Jun. 27, 2006
7045880 Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction May. 16, 2006
7033435 Process for preparing p-n junctions having a p-type ZnO film Apr. 25, 2006
7002208 Semiconductor device and manufacturing method of the same Feb. 21, 2006
6992350 High voltage power MOSFET having low on-resistance Jan. 31, 2006
6960821 Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction Nov. 1, 2005
6946364 Integrated circuit having a device wafer with a diffused doped backside layer Sep. 20, 2005
6929990 MOSFET with a thin gate insulating film Aug. 16, 2005
6924200 Methods using disposable and permanent films for diffusion and implantation doping Aug. 2, 2005
6903416 Trench transistors and methods for fabricating trench transistors Jun. 7, 2005
6867495 Integrated circuit having a device wafer with a diffused doped backside layer Mar. 15, 2005
6852603 Fabrication of abrupt ultra-shallow junctions Feb. 8, 2005
6849528 Fabrication of ultra shallow junctions from a solid source with fluorine implantation Feb. 1, 2005
6849529 Deep-trench capacitor with hemispherical grain silicon surface and method for making the same Feb. 1, 2005
6806173 Method for producing highly doped semiconductor components Oct. 19, 2004
6794233 Methods of fabricating a MOSFET Sep. 21, 2004
6784471 Semiconductor device and manufacturing method thereof Aug. 31, 2004
6700175 Vertical semiconductor device having alternating conductivity semiconductor regions Mar. 2, 2004
6689662 Method of forming a high voltage power MOSFET having low on-resistance Feb. 10, 2004
6660571 High voltage power MOSFET having low on-resistance Dec. 9, 2003
6649308 Ultra-short channel NMOSFETS with self-aligned silicide contact Nov. 18, 2003
6642591 Field-effect transistor Nov. 4, 2003
6642560 MOSFET with a thin gate insulating film Nov. 4, 2003
6627949 High voltage power MOSFET having low on-resistance Sep. 30, 2003
6620668 Method of fabricating MOS transistor having shallow source/drain junction regions Sep. 16, 2003
6617647 Insulated gate semiconductor device and method of manufacturing the same Sep. 9, 2003
6610141 Zinc oxide films containing p-type dopant and process for preparing same Aug. 26, 2003
6593619 High voltage power MOSFET having low on-resistance Jul. 15, 2003

1 2 3 4 5










 
 
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