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Class Information
Number: 257/E21.148
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (epo) > Diffusion into or out of group iv semiconductor (epo) > From or through or into an applied layer, e.g., photoresist, nitride (epo)
Description: This subclass is indented under subclass E21.145. This subclass is substantially the same in scope as ECLA classification H01L21/225A4.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.151 Applied layer being silicon or silicide or sipos, e.g., polysilicon, porous silicon (epo) 392
257/E21.149 Applied layer is oxide, e.g., p 2 o 5 , psg, h 3 bo 3 , doped oxide (epo) 244


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8618615 Semiconductor device and fabrication method thereof Dec. 31, 2013
8415239 Method for manufacturing a power semiconductor device Apr. 9, 2013
8372737 Use of a shadow mask and a soft mask for aligned implants in solar cells Feb. 12, 2013
8119485 Semiconductor device and fabrication method thereof Feb. 21, 2012
7932107 Method for growing nitride semiconductor Apr. 26, 2011
7759205 Methods for fabricating semiconductor devices minimizing under-oxide regrowth Jul. 20, 2010
7701011 Printed dopant layers Apr. 20, 2010
7700390 Method for fabricating three-dimensional photonic crystal Apr. 20, 2010
7700463 Method for manufacturing semiconductor device Apr. 20, 2010
7456062 Method of forming a semiconductor device Nov. 25, 2008
7446395 Device having dual etch stop liner and protective layer Nov. 4, 2008
7435668 Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions Oct. 14, 2008
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7015139 Two-dimensionally arrayed quantum device Mar. 21, 2006
6984552 Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element Jan. 10, 2006
6933589 Method of making a semiconductor transistor Aug. 23, 2005
6924200 Methods using disposable and permanent films for diffusion and implantation doping Aug. 2, 2005
6903416 Trench transistors and methods for fabricating trench transistors Jun. 7, 2005
6878417 Method of molecular-scale pattern imprinting at surfaces Apr. 12, 2005
6858534 Method of manufacturing a multilayered doped conductor for a contact in an integrated device Feb. 22, 2005
6818535 Thin phosphorus nitride film as an n-type doping source used in a laser doping technology Nov. 16, 2004
6812086 Method of making a semiconductor transistor Nov. 2, 2004
6812523 Semiconductor wafer with ultra thin doping level formed by defect engineering Nov. 2, 2004
6756273 Semiconductor component and method of manufacturing Jun. 29, 2004
6746934 Atomic layer doping apparatus and method Jun. 8, 2004
6670682 Multilayered doped conductor Dec. 30, 2003
6635494 Method of forming a two-dimensionally arrayed quantum device using a metalloprotein complex as a quantum-dot mask array Oct. 21, 2003
6586318 Thin phosphorus nitride film as an N-type doping source used in laser doping technology Jul. 1, 2003
6555451 Method for making shallow diffusion junctions in semiconductors using elemental doping Apr. 29, 2003
6541353 Atomic layer doping apparatus and method Apr. 1, 2003
6506653 Method using disposable and permanent films for diffusion and implant doping Jan. 14, 2003
6387782 Process of forming an ultra-shallow junction dopant layer having a peak concentration within a dielectric layer May. 14, 2002
6329704 Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer Dec. 11, 2001
6329274 Method of producing semiconductor device Dec. 11, 2001
6326664 Transistor with ultra shallow tip and method of fabrication Dec. 4, 2001
6319738 Two-dimensionally arrayed quantum device fabrication method Nov. 20, 2001
6319566 Method of molecular-scale pattern imprinting at surfaces Nov. 20, 2001
6287928 Two-dimensionally arrayed quantum device Sep. 11, 2001
6258661 Formation of out-diffused bitline by laser anneal Jul. 10, 2001
6255183 Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacers Jul. 3, 2001
6232207 Doping process for producing homojunctions in semiconductor substrates May. 15, 2001
6228750 Method of doping a semiconductor surface May. 8, 2001
6207493 Formation of out-diffused bitline by laser anneal Mar. 27, 2001
6191463 Apparatus and method of improving an insulating film on a semiconductor device Feb. 20, 2001
6165826 Transistor with low resistance tip and method of fabrication in a CMOS process Dec. 26, 2000
6156393 Method of molecular-scale pattern imprinting at surfaces Dec. 5, 2000
6130144 Method for making very shallow junctions in silicon devices Oct. 10, 2000
6121100 Method of fabricating a MOS transistor with a raised source/drain extension Sep. 19, 2000
6121075 Fabrication of two-dimensionally arrayed quantum device Sep. 19, 2000
6093610 Self-aligned pocket process for deep sub-0.1 .mu.m CMOS devices and the device Jul. 25, 2000

1 2 3










 
 
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