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Class Information
Number: 257/E21.147
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (epo) > Diffusion into or out of group iv semiconductor (epo) > Using predeposition of impurities into the semiconductor surface, e.g., from gaseous phase (epo) > By ion implantation (epo)
Description: This subclass is indented under subclass E21.146. This subclass is substantially the same in scope as ECLA classification H01L21/225A2D.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8618615 Semiconductor device and fabrication method thereof Dec. 31, 2013
8592870 Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistor Nov. 26, 2013
8507311 Method for forming an image sensing device Aug. 13, 2013
8461033 Heat treatment apparatus and method for heating substrate by light-irradiation Jun. 11, 2013
8420484 Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (GIDL) and method for manufacturing the same Apr. 16, 2013
8314019 Metallization and its use in, in particular, an IGBT or a diode Nov. 20, 2012
8309444 System and method of dosage profile control Nov. 13, 2012
8299509 Asymmetric source/drain junctions for low power silicon on insulator devices Oct. 30, 2012
8252644 Method for forming a nonvolatile memory cell comprising a reduced height vertical diode Aug. 28, 2012
8119485 Semiconductor device and fabrication method thereof Feb. 21, 2012
8110431 Ion implanted selective emitter solar cells with in situ surface passivation Feb. 7, 2012
8071418 Selective emitter solar cells formed by a hybrid diffusion and ion implantation process Dec. 6, 2011
8004048 Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (GIDL) and method for manufacturing the same Aug. 23, 2011
7980198 Doping apparatus, doping method, and method for fabricating thin film transistor Jul. 19, 2011
7977178 Asymmetric source/drain junctions for low power silicon on insulator devices Jul. 12, 2011
7915128 High voltage semiconductor devices Mar. 29, 2011
7888194 Method of fabricating semiconductor device Feb. 15, 2011
7795122 Antimony ion implantation for semiconductor components Sep. 14, 2010
7772110 Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing Aug. 10, 2010
7754588 Method to improve a copper/dielectric interface in semiconductor devices Jul. 13, 2010
7727786 Photon-based memory device Jun. 1, 2010
7713761 Doping apparatus, doping method, and method for fabricating thin film transistor May. 11, 2010
7696053 Implantation method for doping semiconductor substrate Apr. 13, 2010
7678674 Memory cell dual pocket implant Mar. 16, 2010
7618867 Method of forming a doped portion of a semiconductor and method of forming a transistor Nov. 17, 2009
7611947 Method of manufacturing semiconductor device Nov. 3, 2009
7572716 Semiconductor doping with improved activation Aug. 11, 2009
7442631 Doping method and method of manufacturing field effect transistor Oct. 28, 2008
7416948 Trench FET with improved body to gate alignment Aug. 26, 2008
7407874 Plasma doping method Aug. 5, 2008
7348264 Plasma doping method Mar. 25, 2008
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7250312 Doping method and method for fabricating thin film transistor Jul. 31, 2007
7189620 Semiconductor device including a channel stop structure and method of manufacturing the same Mar. 13, 2007
7087503 Shallow self isolated doped implanted silicon process Aug. 8, 2006
7033876 Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same Apr. 25, 2006
7009247 Trench MIS device with thick oxide layer in bottom of gate contact trench Mar. 7, 2006
6979885 Devices with patterned wells and method for forming same Dec. 27, 2005
6927153 Ion implantation with multiple concentration levels Aug. 9, 2005
6858520 Method of manufacturing semiconductor device Feb. 22, 2005
6849516 Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer Feb. 1, 2005
6822311 DC or AC electric field assisted anneal Nov. 23, 2004
6809003 Bi-directional epitaxial doping technique Oct. 26, 2004
6764906 Method for making trench mosfet having implanted drain-drift region Jul. 20, 2004
6667513 Semiconductor device with compensated threshold voltage and method for making same Dec. 23, 2003
6600193 Trench MOSFET having implanted drain-drift region Jul. 29, 2003
6569738 Process for manufacturing trench gated MOSFET having drain/drift region May. 27, 2003
6555894 Device with patterned wells and method for forming same Apr. 29, 2003
6552411 DC or AC electric field assisted anneal Apr. 22, 2003
6509250 Method for CMOS well drive in a non-inert ambient Jan. 21, 2003

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