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Class Information
Number: 257/E21.146
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (epo) > Diffusion into or out of group iv semiconductor (epo) > Using predeposition of impurities into the semiconductor surface, e.g., from gaseous phase (epo)
Description: This subclass is indented under subclass E21.145. This subclass is substantially the same in scope as ECLA classification H01L21/225A2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.147 By ion implantation (epo) 126

Patents under this class:

Patent Number Title Of Patent Date Issued
8440578 GCIB process for reducing interfacial roughness following pre-amorphization May. 14, 2013
7754605 Ultrashallow semiconductor contact by outdiffusion from a solid source Jul. 13, 2010
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7214618 Technique for high efficiency metalorganic chemical vapor deposition May. 8, 2007
6693024 Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating Feb. 17, 2004
6555451 Method for making shallow diffusion junctions in semiconductors using elemental doping Apr. 29, 2003
6461948 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam Oct. 8, 2002
6323525 MISFET semiconductor device having relative impurity concentration levels between layers Nov. 27, 2001
6248651 Low cost method of fabricating transient voltage suppressor semiconductor devices or the like Jun. 19, 2001
6221165 High temperature plasma-assisted diffusion Apr. 24, 2001
6100152 Method of manufacturing a semiconductor device with a fast bipolar transistor Aug. 8, 2000
5871826 Proximity laser doping technique for electronic materials Feb. 16, 1999
5766973 Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates Jun. 16, 1998
5565377 Process for forming retrograde profiles in silicon Oct. 15, 1996
5472909 Method for the preparation of discrete substrate plates of semiconductor silicon wafer Dec. 5, 1995
5316969 Method of shallow junction formation in semiconductor devices using gas immersion laser doping May. 31, 1994
5308789 Method of preparing diffused silicon device substrate May. 3, 1994
5286660 Method for doping a semiconductor wafer having a diffusivity enhancement region Feb. 15, 1994
5081050 Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities Jan. 14, 1992
5003368 Turn-off thyristor Mar. 26, 1991
4820656 Method for producing a p-doped semiconductor region in an n-conductive semiconductor body Apr. 11, 1989
4757031 Method for the manufacture of a pn-junction having high dielectric strength Jul. 12, 1988
4613381 Method for fabricating a thyristor Sep. 23, 1986
4588454 Diffusion of dopant into a semiconductor wafer May. 13, 1986
4514440 Spin-on dopant method Apr. 30, 1985
4511413 Process for forming an IC wafer with buried Zener diodes Apr. 16, 1985
4391658 Method for manufacturing semiconductor substrate Jul. 5, 1983
4305760 Polysilicon-to-substrate contact processing Dec. 15, 1981
4266990 Process for diffusion of aluminum into a semiconductor May. 12, 1981
4234361 Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer Nov. 18, 1980
4210472 Manufacturing process of semiconductor devices Jul. 1, 1980
4149915 Process for producing defect-free semiconductor devices having overlapping high conductivity impurity regions Apr. 17, 1979
4133701 Selective enhancement of phosphorus diffusion by implanting halogen ions Jan. 9, 1979
4105476 Method of manufacturing semiconductors Aug. 8, 1978
4043849 Planar diffusion method for an I.sup.2 L circuit including a bipolar analog circuit part Aug. 23, 1977
4030952 Method of MOS circuit fabrication Jun. 21, 1977
4009058 Method of fabricating large area, high voltage PIN photodiode devices Feb. 22, 1977
4001050 Method of fabricating an isolated p-n junction Jan. 4, 1977
3972838 Composition for diffusing phosphorus Aug. 3, 1976
3966515 Method for manufacturing high voltage field-effect transistors Jun. 29, 1976
3948695 Method of diffusing an impurity into semiconductor wafers Apr. 6, 1976

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