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Class Information
Number: 257/E21.145
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (epo) > Diffusion into or out of group iv semiconductor (epo)
Description: This subclass is indented under subclass E21.144. This subclass is substantially the same in scope as ECLA classification H01L21/225A.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.148 From or through or into an applied layer, e.g., photoresist, nitride (epo) 139
257/E21.146 Using predeposition of impurities into the semiconductor surface, e.g., from gaseous phase (epo) 41


Patents under this class:

Patent Number Title Of Patent Date Issued
8637386 Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same Jan. 28, 2014
8163638 Back side contact solar cell structures and fabrication processes Apr. 24, 2012
8030203 Method of forming metal line of semiconductor device Oct. 4, 2011
7999250 Silicon-germanium-carbon semiconductor structure Aug. 16, 2011
7851339 Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer Dec. 14, 2010
7820475 Back side contact solar cell structures and fabrication processes Oct. 26, 2010
7683488 Semiconductor device Mar. 23, 2010
7507623 Fabricating method of semiconductor device Mar. 24, 2009
7491629 Method for producing an n-doped field stop zone in a semiconductor body and semiconductor component having a field stop zone Feb. 17, 2009
7473587 High-quality SGOI by oxidation near the alloy melting temperature Jan. 6, 2009
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7074686 Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications Jul. 11, 2006
6964892 N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same Nov. 15, 2005
6916730 Method for forming a gate Jul. 12, 2005
6825528 Semiconductor device, method of manufacture thereof, and information processing device Nov. 30, 2004
6805962 Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications Oct. 19, 2004
6444553 Junction formation with diffusion barrier for silicide contacts and method for forming Sep. 3, 2002
6433397 N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same Aug. 13, 2002
6372589 Method of forming ultra-shallow source/drain extension by impurity diffusion from doped dielectric spacer Apr. 16, 2002
6355544 Selective high concentration doping of semiconductor material utilizing laser annealing Mar. 12, 2002
6333230 Scalable high-voltage devices Dec. 25, 2001
6207520 Rapid thermal anneal with a gaseous dopant species for formation of lightly doped regions Mar. 27, 2001
5969398 Method for producing a semiconductor device and a semiconductor device Oct. 19, 1999
4012235 Solid phase epitaxial growth Mar. 15, 1977
4006046 Method for compensating for emitter-push effect in the fabrication of transistors Feb. 1, 1977











 
 
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