| |
 |
|
Class Information
Number: 257/E21.144
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (epo)
Description: This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/225.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7326631 |
Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another |
Feb. 5, 2008 |
| 7303967 |
Method for fabricating transistor of semiconductor device |
Dec. 4, 2007 |
| 7282428 |
Method for solid phase diffusion of zinc into an InP-based photodiode and an InP photodiode made with the method |
Oct. 16, 2007 |
| 6916730 |
Method for forming a gate |
Jul. 12, 2005 |
| 6531379 |
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe |
Mar. 11, 2003 |
| 6251755 |
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe |
Jun. 26, 2001 |
| 4907059 |
Semiconductor bipolar-CMOS inverter |
Mar. 6, 1990 |
| 4757027 |
Method for fabricating improved oxide defined transistors |
Jul. 12, 1988 |
| 4720308 |
Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby |
Jan. 19, 1988 |
| 4712125 |
Structure for contacting a narrow width PN junction region |
Dec. 8, 1987 |
| 4692348 |
Low temperature shallow doping technique |
Sep. 8, 1987 |
| 4676847 |
Controlled boron doping of silicon |
Jun. 30, 1987 |
| 4626293 |
Method of making a high voltage DMOS transistor |
Dec. 2, 1986 |
| 4619719 |
Process for forming a doped oxide film and composite article |
Oct. 28, 1986 |
| 4605450 |
Process for forming a doped oxide film and doped semiconductor |
Aug. 12, 1986 |
| 4578283 |
Polymeric boron nitrogen dopant |
Mar. 25, 1986 |
| 4529456 |
Method of forming bifets by forming isolation regions connected by diffusion in semiconductor substrate and epitaxial layer |
Jul. 16, 1985 |
| 4485552 |
Complementary transistor structure and method for manufacture |
Dec. 4, 1984 |
| 4472212 |
Method for fabricating a semiconductor device |
Sep. 18, 1984 |
| 4471524 |
Method for manufacturing an insulated gate field effect transistor device |
Sep. 18, 1984 |
| 4435225 |
Method of forming self-aligned lateral bipolar transistor |
Mar. 6, 1984 |
| 4050966 |
Method for the preparation of diffused silicon semiconductor components |
Sep. 27, 1977 |
|
|
|
