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Class Information
Number: 257/E21.142
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Using diffusion into or out of a solid from or into a gaseous phase (epo) > Diffusion into or out of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.141. This subclass is substantially the same in scope as ECLA classification H01L21/223B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8450130 Method of manufacturing a semiconductor laser May. 28, 2013
8012813 Display substrate and method of manufacturing the same Sep. 6, 2011
7846823 Masking paste, method of manufacturing same, and method of manufacturing solar cell using masking paste Dec. 7, 2010
7727868 Apparatus and method for controlling diffusion Jun. 1, 2010
7713770 Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby May. 11, 2010
7611977 Process of phosphorus diffusion for manufacturing solar cell Nov. 3, 2009
7439609 Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures Oct. 21, 2008
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
6830995 Method of diffusing zinc into article and method of heating article Dec. 14, 2004
6653248 Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device Nov. 25, 2003
6516743 Method and apparatus diffusing zinc into groups III-V compound semiconductor crystals Feb. 11, 2003
6426522 Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device Jul. 30, 2002
6294414 Method of fabricating heterointerface devices having diffused junctions Sep. 25, 2001
6214707 Method of forming a doped region in a semiconductor substrate Apr. 10, 2001
6214708 Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals Apr. 10, 2001
6133125 Selective area diffusion control process Oct. 17, 2000
6013566 Method of forming a doped region in a semiconductor substrate Jan. 11, 2000
5874320 Method for forming P-type gallium nitride Feb. 23, 1999
5871826 Proximity laser doping technique for electronic materials Feb. 16, 1999
5585305 Method for fabricating a semiconductor device Dec. 17, 1996
5506186 Method of manufacturing an optoelectronic device Apr. 9, 1996
5343055 Avalanche photodiode structure with Mg doping and method Aug. 30, 1994
5232873 Method of fabricating contacts for semiconductor devices Aug. 3, 1993
5049524 Cd diffusion in InP substrates Sep. 17, 1991
4889830 Zinc diffusion in the presence of cadmium into indium phosphide Dec. 26, 1989
4847217 Method for making a semiconductor device Jul. 11, 1989
4797371 Method for forming an impurity region in semiconductor devices by out-diffusion Jan. 10, 1989
4774195 Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of ac Sep. 27, 1988
4742022 Method of diffusing zinc into III-V compound semiconductor material May. 3, 1988
4725565 Method of diffusing conductivity type imparting material into III-V compound semiconductor material Feb. 16, 1988
4698122 Method of diffusion of impurities Oct. 6, 1987
4592793 Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates Jun. 3, 1986
4545824 Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion Oct. 8, 1985
4280858 Method of manufacturing a semiconductor device by retarding the diffusion of zinc or cadmium into a device region Jul. 28, 1981
4211587 Process for producing a metal to compound semiconductor contact having a potential barrier of predetermined height Jul. 8, 1980
RE29648 Process for the preparation of electroluminescent III-V materials containing isoelectronic impurities May. 30, 1978
4075044 Method of producing a siliceous cover layer on a semiconductor element by centrifugal coating utilizing a mixture of silica emulsions Feb. 21, 1978
3977016 Electroluminescent device and method of manufacturing same Aug. 24, 1976











 
 
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