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Class Information
Number: 257/E21.14
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Diffusion source (epo)
Description: This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/22N.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8101486 Methods for forming isolated fin structures on bulk semiconductor material Jan. 24, 2012
8058159 Method of making low work function component Nov. 15, 2011
7662720 3-Dimensional flash memory device and method of fabricating the same Feb. 16, 2010
7611977 Process of phosphorus diffusion for manufacturing solar cell Nov. 3, 2009
7326631 Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another Feb. 5, 2008
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7033435 Process for preparing p-n junctions having a p-type ZnO film Apr. 25, 2006
7001455 Method and apparatus for doping semiconductors Feb. 21, 2006
6695903 Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors Feb. 24, 2004
6610141 Zinc oxide films containing p-type dopant and process for preparing same Aug. 26, 2003
6555451 Method for making shallow diffusion junctions in semiconductors using elemental doping Apr. 29, 2003
6475825 Process for preparing zinc oxide films containing p-type dopant Nov. 5, 2002
6426280 Method for doping spherical semiconductors Jul. 30, 2002
6410162 Zinc oxide films containing P-type dopant and process for preparing same Jun. 25, 2002
6342313 Oxide films and process for preparing same Jan. 29, 2002
6331477 Doping of spherical semiconductors during non-contact processing in the liquid state Dec. 18, 2001
6291085 Zinc oxide films containing P-type dopant and process for preparing same Sep. 18, 2001
5871826 Proximity laser doping technique for electronic materials Feb. 16, 1999
5759909 Method for manufacturing a silicon wafer by using a dopant foil Jun. 2, 1998
5656541 Low temperature P.sub.2 O.sub.5 oxide diffusion source Aug. 12, 1997
5629234 High temperature phosphorous oxide diffusion source May. 13, 1997
5532185 Impurity doping method with adsorbed diffusion source Jul. 2, 1996
5350460 High temperature phosphorus oxide diffusion source Sep. 27, 1994
5350461 Low temperature P.sub.2 O.sub.5 oxide diffusion source Sep. 27, 1994
5324686 Method of manufacturing semiconductor device using hydrogen as a diffusion controlling substance Jun. 28, 1994
5208185 Process for diffusing boron into semiconductor wafers May. 4, 1993
5094976 Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer Mar. 10, 1992
5073517 Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer Dec. 17, 1991
5049524 Cd diffusion in InP substrates Sep. 17, 1991
5024867 Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer Jun. 18, 1991
4929572 Dopant of arsenic, method for the preparation thereof and method for doping of semiconductor therewith May. 29, 1990
4891331 Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 composition Jan. 2, 1990
4846902 Solid diffusion source of GD oxide/P205 compound and method of making silicon wafer Jul. 11, 1989
4798764 Arsenate dopant sources and method of making the sources Jan. 17, 1989
4793862 Silica-based antimony containing film-forming composition Dec. 27, 1988
4749615 Semiconductor dopant source Jun. 7, 1988
4734386 Boron nitride dopant source for diffusion doping Mar. 29, 1988
4588455 Planar diffusion source May. 13, 1986
4571366 Process for forming a doped oxide film and doped semiconductor Feb. 18, 1986
4525429 Porous semiconductor dopant carriers Jun. 25, 1985
4490192 Stable suspensions of boron, phosphorus, antimony and arsenic dopants Dec. 25, 1984
4317680 Diffusion source and method of preparing Mar. 2, 1982
4282282 Barium aluminosilicate glasses, glass-ceramics and dopant Aug. 4, 1981
4243427 High concentration phosphoro-silica spin-on dopant Jan. 6, 1981
4239560 Open tube aluminum oxide disc diffusion Dec. 16, 1980
4236948 Process for doping semiconductor crystals Dec. 2, 1980
4190458 Metal-silica solution for forming films on semiconductor surfaces Feb. 26, 1980
4175988 Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus Nov. 27, 1979
4160672 Glass-ceramics for semiconductor doping Jul. 10, 1979
4152286 Composition and method for forming a doped oxide film May. 1, 1979

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