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Class Information
Number: 257/E21.139
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > Lithium-drift (epo)
Description: This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/22L.










Patents under this class:

Patent Number Title Of Patent Date Issued
7528466 Copper gate electrode of liquid crystal display device and method of fabricating the same May. 5, 2009
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
5597762 Field-enhanced diffusion using optical activation Jan. 28, 1997











 
 
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