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Class Information
Number: 257/E21.138
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > To control carrier lifetime, i.e., deep level dopant (epo) > In group iii-v compound (epo)
Description: This subclass is indented under subclass E21.137. This subclass is substantially the same in scope as ECLA classification H01L21/22D2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8344395 Light-emitting diode and manufacturing method thereof Jan. 1, 2013
8237245 Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor device Aug. 7, 2012
8148241 Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films Apr. 3, 2012
8106429 Image sensor and manufacturing method thereof Jan. 31, 2012
8067303 Solid state energy conversion device Nov. 29, 2011
7939454 Module and lamination process for multijunction cells May. 10, 2011
7399692 III-nitride semiconductor fabrication Jul. 15, 2008
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
5767533 High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements Jun. 16, 1998
5395794 Method of treating semiconductor materials Mar. 7, 1995
5374589 Process of making a bistable photoconductive component Dec. 20, 1994











 
 
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