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Class Information
Number: 257/E21.137
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > To control carrier lifetime, i.e., deep level dopant (epo)
Description: This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/22D.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.138 In group iii-v compound (epo) 11

Patents under this class:

Patent Number Title Of Patent Date Issued
8415239 Method for manufacturing a power semiconductor device Apr. 9, 2013
8106429 Image sensor and manufacturing method thereof Jan. 31, 2012
8053867 Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants Nov. 8, 2011
7687385 Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Mar. 30, 2010
7531905 Stacked semiconductor device May. 12, 2009
7514318 Method for fabricating non-volatile memory cells Apr. 7, 2009
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
7229886 Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein Jun. 12, 2007
7217977 Covert transformation of transistor properties as a circuit protection method May. 15, 2007
7195981 Method of forming an integrated circuit employable with a power converter Mar. 27, 2007
6828690 Non-uniform minority carrier lifetime distributions in high performance silicon power devices Dec. 7, 2004
6624049 Semiconductor device and method of manufacturing the same Sep. 23, 2003
6168981 Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices Jan. 2, 2001
6133119 Photoelectric conversion device and method manufacturing same Oct. 17, 2000
6093955 Power semiconductor device Jul. 25, 2000
5900652 Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices May. 4, 1999
5747872 Fast power diode May. 5, 1998
5629555 Integrated structure bipolar transistors with controlled storage time May. 13, 1997
5624852 Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time Apr. 29, 1997
5528058 IGBT device with platinum lifetime control and reduced gaw Jun. 18, 1996
5468660 Process for manufacturing an integrated bipolar power device and a fast diode Nov. 21, 1995
5371040 Method for manufacturing semiconductor components with short switching time Dec. 6, 1994
5343068 Integrated bipolar power device and a fast diode Aug. 30, 1994
5342805 Method of growing a semiconductor material by epilaxy Aug. 30, 1994
5300453 Method for producing semiconductor device Apr. 5, 1994
5284780 Method for increasing the electric strength of a multi-layer semiconductor component Feb. 8, 1994
5283202 IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions Feb. 1, 1994
5227315 Process of introduction and diffusion of platinum ions in a slice of silicon Jul. 13, 1993
5151766 Semiconductor component Sep. 29, 1992
5032540 A Process for modulating the quantity of gold diffused into a silicon substrate Jul. 16, 1991
4963509 Gold diffusion method for semiconductor devices of high switching speed Oct. 16, 1990
4925812 Platinum diffusion process May. 15, 1990
4855799 Power MOS FET with carrier lifetime killer Aug. 8, 1989
4717588 Metal redistribution by rapid thermal processing Jan. 5, 1988
4370180 Method for manufacturing power switching devices Jan. 25, 1983
4290188 Process for producing bipolar semiconductor device utilizing predeposition of dopant and a polycrystalline silicon-gold film followed by simultaneous diffusion Sep. 22, 1981
4236948 Process for doping semiconductor crystals Dec. 2, 1980
4203780 Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature May. 20, 1980
4140560 Process for manufacture of fast recovery diodes Feb. 20, 1979
4077819 Technique for passivating semiconductor devices Mar. 7, 1978
4066484 Method of manufacture of a gold diffused thyristor Jan. 3, 1978
4007476 Technique for passivating semiconductor devices Feb. 8, 1977
3953243 Method for setting the lifetime of charge carriers in semiconductor bodies Apr. 27, 1976

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