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Class Information
Number: 257/E21.136
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (epo) > From the substrate during epitaxy, e.g., autodoping; preventing or using autodoping (epo)
Description: This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/22C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8652937 Methods of fabricating back-illuminated imaging sensors Feb. 18, 2014
8106429 Image sensor and manufacturing method thereof Jan. 31, 2012
7902642 Resin composition for sealing light-emitting device and lamp Mar. 8, 2011
7700449 Forming ESD diodes and BJTs using FinFET compatible processes Apr. 20, 2010
7687385 Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Mar. 30, 2010
7303967 Method for fabricating transistor of semiconductor device Dec. 4, 2007
6984848 Thin film transistor with buffer layer for promoting electron mobility Jan. 10, 2006
6887775 Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer May. 3, 2005
6884701 Process for fabricating semiconductor device Apr. 26, 2005
6838359 Suppression of n-type autodoping in low-temperature Si and SiGe epitaxy Jan. 4, 2005
6818319 Diffusion barrier multi-layer structure for thin film transistor liquid crystal displays and process for fabricating thereof Nov. 16, 2004
6819695 Dopant diffusion barrier layer for use in III-V structures Nov. 16, 2004
6746941 Semiconductor wafer and production method therefor Jun. 8, 2004
6706542 Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication Mar. 16, 2004
6653213 Structure and method for doping of III-V compounds Nov. 25, 2003
6635556 Method of preventing autodoping Oct. 21, 2003
6593199 Method of manufacturing a semiconductor component and semiconductor component thereof Jul. 15, 2003
6579752 Phosphorus dopant control in low-temperature Si and SiGe epitaxy Jun. 17, 2003
6576535 Carbon doped epitaxial layer for high speed CB-CMOS Jun. 10, 2003
6541117 Silicon epitaxial wafer and a method for producing it Apr. 1, 2003
6465332 Method of making MOS transistor with high doping gradient under the gate Oct. 15, 2002
6454854 Semiconductor wafer and production method therefor Sep. 24, 2002
6372558 Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate Apr. 16, 2002
6294443 Method of epitaxy on a silicon substrate comprising areas heavily doped with boron Sep. 25, 2001
6184154 Method of processing the backside of a wafer within an epitaxial reactor chamber Feb. 6, 2001
5998283 Silicon wafer having plasma CVD gettering layer with components/composition changing in depth-wise direction and method of manufacturing the silicon wafer Dec. 7, 1999
5872028 Method of forming power semiconductor devices with controllable integrated buffer Feb. 16, 1999
5834363 Method of manufacturing semiconductor wafer, semiconductor wafer manufactured by the same, semiconductor epitaxial wafer, and method of manufacturing the semiconductor epitaxial wafer Nov. 10, 1998
5696004 Method of producing semiconductor device with a buried layer Dec. 9, 1997
5585305 Method for fabricating a semiconductor device Dec. 17, 1996
5432121 Method for fabricating a multilayer epitaxial structure Jul. 11, 1995
5387807 P-N junction diffusion barrier employing mixed dopants Feb. 7, 1995
5324685 Method for fabricating a multilayer epitaxial structure Jun. 28, 1994
5279987 Fabricating planar complementary patterned subcollectors with silicon epitaxial layer Jan. 18, 1994
5225235 Semiconductor wafer and manufacturing method therefor Jul. 6, 1993
5213986 Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning May. 25, 1993
5208184 P-N junction diffusion barrier employing mixed dopants May. 4, 1993
5177025 Method of fabricating an ultra-thin active region for high speed semiconductor devices Jan. 5, 1993
5137838 Method of fabricating P-buried layers for PNP devices Aug. 11, 1992
5070031 Complementary semiconductor region fabrication Dec. 3, 1991
5068704 Method of manufacturing semiconductor device Nov. 26, 1991
4935386 Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating Jun. 19, 1990
4925809 Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor May. 15, 1990
4894349 Two step vapor-phase epitaxial growth process for control of autodoping Jan. 16, 1990
4859626 Method of forming thin epitaxial layers using multistep growth for autodoping control Aug. 22, 1989
4721684 Method for forming a buried layer and a collector region in a monolithic semiconductor device Jan. 26, 1988
4696701 Epitaxial front seal for a wafer Sep. 29, 1987
4687682 Back sealing of silicon wafers Aug. 18, 1987
4662956 Method for prevention of autodoping of epitaxial layers May. 5, 1987
4571275 Method for minimizing autodoping during epitaxial deposition utilizing a graded pattern subcollector Feb. 18, 1986

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