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Class Information
Number: 257/E21.132
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (epo) > Preparation of substrate for selective epitaxy (epo)
Description: This subclass is indented under subclass E21.131. This subclass is substantially the same in scope as ECLA classification H01L21/20C2.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8609451 Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells Dec. 17, 2013
8592292 Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates Nov. 26, 2013
8536026 Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same Sep. 17, 2013
8492273 Method for selective deposition of a semiconductor material Jul. 23, 2013
8377784 Method for fabricating a semiconductor device Feb. 19, 2013
8263468 Thin body semiconductor devices Sep. 11, 2012
8222075 Nonvolatile semiconductor memory device using a variable resistance film and method of manufacturing the same Jul. 17, 2012
8207010 Method for manufacturing photoelectric conversion device Jun. 26, 2012
8187975 Hydrochloric acid etch and low temperature epitaxy in a single chamber for raised source-drain fabrication May. 29, 2012
8129260 Semiconductor substrates having low defects and methods of manufacturing the same Mar. 6, 2012
8071442 Transistor with embedded Si/Ge material having reduced offset to the channel region Dec. 6, 2011
7981775 Nitride semiconductor light-emitting device having high light efficiency and method of manfacturing the same Jul. 19, 2011
7972971 Method for producing Si.sub.1-yGe.sub.y based zones with different contents in Ge on a same substrate by condensation of germanium Jul. 5, 2011
7968433 Fabrication of nanowires and nanodevices Jun. 28, 2011
7776698 Selective formation of silicon carbon epitaxial layer Aug. 17, 2010
7759213 Pattern independent Si:C selective epitaxy Jul. 20, 2010
7754504 Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V gr Jul. 13, 2010
7709326 Methods of forming layers comprising epitaxial silicon May. 4, 2010
7700461 Methods of laterally forming single crystalline thin film regions from seed layers Apr. 20, 2010
7687382 Method of making group III nitride-based compound semiconductor Mar. 30, 2010
7662689 Strained transistor integration for CMOS Feb. 16, 2010
7648893 Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronics Jan. 19, 2010
7547617 Semiconductor device including container having epitaxial silicon therein Jun. 16, 2009
7517758 Method of forming a vertical transistor Apr. 14, 2009
7494903 Doped nanoparticle semiconductor charge transport layer Feb. 24, 2009
7439136 Method of forming a layer comprising epitaxial silicon Oct. 21, 2008
7435691 Micromechanical component and suitable method for its manufacture Oct. 14, 2008
7413966 Method of fabricating polysilicon thin film transistor with catalyst Aug. 19, 2008
7358544 Nitride semiconductor light emitting device Apr. 15, 2008
7307030 Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same Dec. 11, 2007
7276416 Method of forming a vertical transistor Oct. 2, 2007
7176115 Method of manufacturing Group III nitride substrate and semiconductor device Feb. 13, 2007
7144779 Method of forming epitaxial silicon-comprising material Dec. 5, 2006
7115489 Methods of growing epitaxial silicon Oct. 3, 2006
7049218 Method of fabricating local interconnection using selective epitaxial growth May. 23, 2006
6900092 Surface engineering to prevent epi growth on gate poly during selective epi processing May. 31, 2005
6872610 Method for preventing polysilicon mushrooming during selective epitaxial processing Mar. 29, 2005
6855620 Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices Feb. 15, 2005
6709513 Substrate including wide low-defect region for use in semiconductor element Mar. 23, 2004
6676764 Method for cleaning a substrate in selective epitaxial growth process Jan. 13, 2004
6482712 Method for fabricating a bipolar semiconductor device Nov. 19, 2002
6451113 Method and apparatus for growing oriented whisker arrays Sep. 17, 2002
6440807 Surface engineering to prevent EPI growth on gate poly during selective EPI processing Aug. 27, 2002
6429061 Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation Aug. 6, 2002
6306734 Method and apparatus for growing oriented whisker arrays Oct. 23, 2001
6121120 Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer Sep. 19, 2000
6110278 Methods for and products of growth of single-crystal on arrayed nucleation sites (SCANS) defined in nucleation unfriendly substrates Aug. 29, 2000
6090666 Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal Jul. 18, 2000
6074936 Method of fabricating a quantum device Jun. 13, 2000
6036773 Method for growing Group III atomic layer Mar. 14, 2000

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