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Class Information
Number: 257/E21.131
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/20C.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.132 Preparation of substrate for selective epitaxy (epo) 52

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
8679879 Method for fabricating quantum dot and semiconductor structure containing quantum dot Mar. 25, 2014
8673706 Methods of forming layers comprising epitaxial silicon Mar. 18, 2014
8669598 Unit pixel of image sensor and photo detector thereof Mar. 11, 2014
8669599 Unit pixel of image sensor and photo detector thereof Mar. 11, 2014
8664056 Transistor with embedded strain-inducing material formed in diamond-shaped cavities based on a pre-amorphization Mar. 4, 2014
8575705 Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the same Nov. 5, 2013
8569806 Unit pixel of image sensor and photo detector thereof Oct. 29, 2013
8536026 Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same Sep. 17, 2013
8492273 Method for selective deposition of a semiconductor material Jul. 23, 2013
8481416 Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same Jul. 9, 2013
8482073 Integrated circuit including FINFETs and methods for forming the same Jul. 9, 2013
8440490 CMOS imager photodiode with enhanced capacitance May. 14, 2013
8367528 Cyclical epitaxial deposition and etch Feb. 5, 2013
8338884 Selective epitaxial growth of semiconductor materials with reduced defects Dec. 25, 2012
8338274 Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration Dec. 25, 2012
8329531 Strain memorization in strained SOI substrates of semiconductor devices Dec. 11, 2012
8298840 Dual sided processing and devices based on freestanding nitride and zinc oxide films Oct. 30, 2012
8247301 Substrate and manufacturing method therefor Aug. 21, 2012
8178414 NMOS architecture involving epitaxially-grown in-situ N-type-doped embedded eSiGe:C source/drain targeting May. 15, 2012
8158495 Process for forming a silicon-based single-crystal portion Apr. 17, 2012
8129208 n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof Mar. 6, 2012
8119505 Method of making group III nitride-based compound semiconductor Feb. 21, 2012
8115191 Self-constrained anisotropic germanium nanostructure from electroplating Feb. 14, 2012
8110901 Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars Feb. 7, 2012
8097493 Method of manufacturing semiconductor light emitting elements Jan. 17, 2012
8093082 Method of fabricating photoelectric device of group III nitride semiconductor and structure thereof Jan. 10, 2012
8093636 CMOS image sensor Jan. 10, 2012
8084336 Oscillator apparatus Dec. 27, 2011
8071442 Transistor with embedded Si/Ge material having reduced offset to the channel region Dec. 6, 2011
8062946 Strained channel transistor structure with lattice-mismatched zone and fabrication method thereof Nov. 22, 2011
8043942 Method for producing core-shell nanowires, nanowires produced by the method and nanowire device comprising the nanowires Oct. 25, 2011
8039369 Semiconductor light-emitting element and method of producing the same Oct. 18, 2011
8039371 Reduced defect semiconductor-on-insulator hetero-structures Oct. 18, 2011
8017415 Dual sided processing and devices based on freestanding nitride and zinc oxide films Sep. 13, 2011
7968361 GaN based semiconductor light emitting device and lamp Jun. 28, 2011
7927905 Method of producing microsprings having nanowire tip structures Apr. 19, 2011
7927954 Method for fabricating strained-silicon metal-oxide semiconductor transistors Apr. 19, 2011
7923340 Method to reduce collector resistance of a bipolar transistor and integration into a standard CMOS flow Apr. 12, 2011
7915747 Substrate for forming semiconductor layer including alignment marks Mar. 29, 2011
7910462 Growing [110] silicon on [001] oriented substrate with rare-earth oxide buffer film Mar. 22, 2011
7911035 Directionally controlled growth of nanowhiskers Mar. 22, 2011
7897490 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement Mar. 1, 2011
7893493 Stacking fault reduction in epitaxially grown silicon Feb. 22, 2011
7875491 CMOS image sensors and methods of manufacturing the same Jan. 25, 2011
7867864 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method Jan. 11, 2011
7863167 Method of manufacturing group III nitride crystal Jan. 4, 2011
7833883 Precursor gas mixture for depositing an epitaxial carbon-doped silicon film Nov. 16, 2010
7816157 Method of producing semiconductor optical device Oct. 19, 2010
7807535 Methods of forming layers comprising epitaxial silicon Oct. 5, 2010
7781290 Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the same Aug. 24, 2010

1 2 3 4 5 6 7 8 9 10 11 12 13 14

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