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Class Information
Number: 257/E21.131
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/20C.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615420 |
Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate |
Nov. 10, 2009 |
| 7589001 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
Sep. 15, 2009 |
| 7560350 |
Method for forming strained semiconductor device and method for forming source/drain region |
Jul. 14, 2009 |
| 7557010 |
Method to improve writer leakage in a SiGe bipolar device |
Jul. 7, 2009 |
| 7554139 |
Semiconductor manufacturing method and semiconductor device |
Jun. 30, 2009 |
| 7553718 |
Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps |
Jun. 30, 2009 |
| 7521723 |
Surface emitting semiconductor laser chip and method for producing the chip |
Apr. 21, 2009 |
| 7491984 |
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
Feb. 17, 2009 |
| 7465606 |
Resistance welded solder crimp for joining stranded wire to a copper lead-frame |
Dec. 16, 2008 |
| 7446024 |
Method of forming nanowires with a narrow diameter distribution |
Nov. 4, 2008 |
| 7411254 |
Semiconductor substrate |
Aug. 12, 2008 |
| 7405131 |
Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor |
Jul. 29, 2008 |
| 7393710 |
Fabrication method of multi-wavelength semiconductor laser device |
Jul. 1, 2008 |
| 7375374 |
Method for repairing thin film transistor array substrate |
May. 20, 2008 |
| 7358544 |
Nitride semiconductor light emitting device |
Apr. 15, 2008 |
| 7342261 |
Light emitting device |
Mar. 11, 2008 |
| 7291524 |
Schottky-barrier mosfet manufacturing method using isotropic etch process |
Nov. 6, 2007 |
| 7276411 |
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same |
Oct. 2, 2007 |
| 7265386 |
Thin film transistor array substrate and method for repairing the same |
Sep. 4, 2007 |
| 7224008 |
Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell |
May. 29, 2007 |
| 7220650 |
Sidewall spacer for semiconductor device and fabrication method thereof |
May. 22, 2007 |
| 7122449 |
Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
Oct. 17, 2006 |
| 7118952 |
Method of making transistor with strained source/drain |
Oct. 10, 2006 |
| 7067339 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
Jun. 27, 2006 |
| 7067387 |
Method of manufacturing dielectric isolated silicon structure |
Jun. 27, 2006 |
| 7060516 |
Method for integrating optical devices in a single epitaxial growth step |
Jun. 13, 2006 |
| 7052979 |
Production method for semiconductor crystal and semiconductor luminous element |
May. 30, 2006 |
| 7049218 |
Method of fabricating local interconnection using selective epitaxial growth |
May. 23, 2006 |
| 7045836 |
Semiconductor structure having a strained region and a method of fabricating same |
May. 16, 2006 |
| 7042150 |
Light-emitting device, method of fabricating the device, and LED lamp using the device |
May. 9, 2006 |
| 7029977 |
Fabrication method of semiconductor wafer |
Apr. 18, 2006 |
| 7030417 |
Semiconductor light emitting device and fabrication method thereof |
Apr. 18, 2006 |
| 7015511 |
Gallium nitride-based light emitting device and method for manufacturing the same |
Mar. 21, 2006 |
| 7012314 |
Semiconductor devices with reduced active region defects and unique contacting schemes |
Mar. 14, 2006 |
| 7009257 |
Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad an |
Mar. 7, 2006 |
| 7008839 |
Method for manufacturing semiconductor thin film |
Mar. 7, 2006 |
| 6998305 |
Enhanced selectivity for epitaxial deposition |
Feb. 14, 2006 |
| 6994751 |
Nitride-based semiconductor element and method of forming nitride-based semiconductor |
Feb. 7, 2006 |
| 6987055 |
Methods for deposition of semiconductor material |
Jan. 17, 2006 |
| 6984560 |
Methods of forming quantum dots in semiconductor devices |
Jan. 10, 2006 |
| 6984840 |
Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element |
Jan. 10, 2006 |
| 6982435 |
Group III nitride compound semiconductor device and method for producing the same |
Jan. 3, 2006 |
| 6979584 |
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
Dec. 27, 2005 |
| 6972245 |
Method for co-fabricating strained and relaxed crystalline and poly-crystalline structures |
Dec. 6, 2005 |
| 6972228 |
Method of forming an element of a microelectronic circuit |
Dec. 6, 2005 |
| 6972206 |
Nitride semiconductor, semiconductor device, and method of manufacturing the same |
Dec. 6, 2005 |
| 6969670 |
Selective growth method, and semiconductor light emitting device and fabrication method thereof |
Nov. 29, 2005 |
| 6967359 |
Nitride semiconductor substrate production method thereof and semiconductor optical device using the same |
Nov. 22, 2005 |
| 6967122 |
Group III nitride compound semiconductor and method for manufacturing the same |
Nov. 22, 2005 |
| 6964705 |
Method for producing semiconductor crystal |
Nov. 15, 2005 |
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