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Class Information
Number: 257/E21.127
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo) > Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (epo) > Group iii-v compound on si or ge (epo)
Description: This subclass is indented under subclass E21.124. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B6.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8680646 Self-aligned carbon electronics with embedded gate electrode Mar. 25, 2014
8664735 IR sensor using REO up-conversion Mar. 4, 2014
8633559 Solid-state imaging device, method of manufacturing the same, and electronic apparatus Jan. 21, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8629531 Structure and method to reduce wafer warp for gallium nitride on silicon wafer Jan. 14, 2014
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates Dec. 17, 2013
8604529 Apparatus with photodiode region in multiple epitaxial layers Dec. 10, 2013
8552516 Solid state image capture device and method for manufacturing same Oct. 8, 2013
8546245 Method for manufacturing composite substrate comprising wide bandgap semiconductor layer Oct. 1, 2013
8541794 Nitride semiconductor light-emitting devices Sep. 24, 2013
8497542 ZrXHfYSn1-X-YO2 films as high K gate dielectrics Jul. 30, 2013
8492862 Sputtering target and manufacturing method thereof, and transistor Jul. 23, 2013
8476646 Light emitting device and light emitting device package Jul. 2, 2013
8455365 Self-aligned carbon electronics with embedded gate electrode Jun. 4, 2013
8450122 Test structures and methods May. 28, 2013
8415684 LED device with improved thermal performance Apr. 9, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8399948 Light emitting device, light emitting device package and lighting system Mar. 19, 2013
8395144 Anthracene derivatives and organic electroluminescent device using same Mar. 12, 2013
8390092 Area-efficient high voltage bipolar-based ESD protection targeting narrow design windows Mar. 5, 2013
8344395 Light-emitting diode and manufacturing method thereof Jan. 1, 2013
8329541 InP-based transistor fabrication Dec. 11, 2012
8329559 Damascene process for use in fabricating semiconductor structures having micro/nano gaps Dec. 11, 2012
8324119 Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch process Dec. 4, 2012
8314422 Light emitting device, light emitting device package and lighting system Nov. 20, 2012
8313967 Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si <001> substrate Nov. 20, 2012
8299509 Asymmetric source/drain junctions for low power silicon on insulator devices Oct. 30, 2012
8294182 Light emitting device Oct. 23, 2012
8288217 Stressor in planar field effect transistor device Oct. 16, 2012
8269224 Light emitting device and method for manufacturing the same Sep. 18, 2012
8269328 Stacked die package for peripheral and center device pad layout device Sep. 18, 2012
8237174 LED structure Aug. 7, 2012
8232566 Light emitting device, package, and system Jul. 31, 2012
8227359 Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitti Jul. 24, 2012
8211738 Polycrystalline silicon solar cell having high efficiency and method for fabricating the same Jul. 3, 2012
8211739 Polycrystalline silicon solar cell having high efficiency and method for fabricating the same Jul. 3, 2012
8212266 Light emitting device and method of fabricating the same Jul. 3, 2012
8193592 MOSFET with asymmetrical extension implant Jun. 5, 2012
8183134 Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces May. 22, 2012
8178443 Hardmask materials May. 15, 2012
8154084 Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material Apr. 10, 2012
8138003 Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches Mar. 20, 2012
8133768 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system Mar. 13, 2012
8110880 Systems and methods for interconnect metallization using a stop-etch layer Feb. 7, 2012
8101530 Lithography patterning method Jan. 24, 2012
8093077 Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride Jan. 10, 2012
8080828 Low profile side emitting LED with window layer and phosphor layer Dec. 20, 2011
8080484 Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitti Dec. 20, 2011
8076197 Image sensor and method for fabricating the same Dec. 13, 2011
8071442 Transistor with embedded Si/Ge material having reduced offset to the channel region Dec. 6, 2011

1 2 3 4 5 6 7










 
 
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