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Class Information
Number: 257/E21.126
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo) > Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (epo) > Group iii-v compound on dissimilar group iii-v compound (epo)
Description: This subclass is indented under subclass E21.124. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B4.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8680646 Self-aligned carbon electronics with embedded gate electrode Mar. 25, 2014
8647904 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus Feb. 11, 2014
8575651 Devices having thick semi-insulating epitaxial gallium nitride layer Nov. 5, 2013
8557622 Epitaxial growth of in-plane nanowires and nanowire devices Oct. 15, 2013
8541794 Nitride semiconductor light-emitting devices Sep. 24, 2013
8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same Sep. 24, 2013
8497542 ZrXHfYSn1-X-YO2 films as high K gate dielectrics Jul. 30, 2013
8492862 Sputtering target and manufacturing method thereof, and transistor Jul. 23, 2013
8476158 Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture Jul. 2, 2013
8476646 Light emitting device and light emitting device package Jul. 2, 2013
8455365 Self-aligned carbon electronics with embedded gate electrode Jun. 4, 2013
8450122 Test structures and methods May. 28, 2013
8415684 LED device with improved thermal performance Apr. 9, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8399277 Compound semiconductor light-emitting diode and method for fabrication thereof Mar. 19, 2013
8399948 Light emitting device, light emitting device package and lighting system Mar. 19, 2013
8395144 Anthracene derivatives and organic electroluminescent device using same Mar. 12, 2013
8390092 Area-efficient high voltage bipolar-based ESD protection targeting narrow design windows Mar. 5, 2013
8344395 Light-emitting diode and manufacturing method thereof Jan. 1, 2013
8314422 Light emitting device, light emitting device package and lighting system Nov. 20, 2012
8294182 Light emitting device Oct. 23, 2012
8269328 Stacked die package for peripheral and center device pad layout device Sep. 18, 2012
8237174 LED structure Aug. 7, 2012
8232566 Light emitting device, package, and system Jul. 31, 2012
8227826 Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture Jul. 24, 2012
8212266 Light emitting device and method of fabricating the same Jul. 3, 2012
8188573 Nitride semiconductor structure May. 29, 2012
8169004 Compound semiconductor epitaxial substrate and process for producing the same May. 1, 2012
8148241 Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films Apr. 3, 2012
8133768 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system Mar. 13, 2012
8110880 Systems and methods for interconnect metallization using a stop-etch layer Feb. 7, 2012
8101490 Method for manufacturing semiconductor device and apparatus for manufacturing same Jan. 24, 2012
8101530 Lithography patterning method Jan. 24, 2012
8071986 Nitride semiconductor light-emitting element Dec. 6, 2011
8043872 Epitaxial material used for GaN based LED with low polarization effect and manufacturing method thereof Oct. 25, 2011
8044414 Semiconductor layered structure and its method of formation, and light emitting device Oct. 25, 2011
8039371 Reduced defect semiconductor-on-insulator hetero-structures Oct. 18, 2011
8008696 Band gap modulated optical sensor Aug. 30, 2011
8003510 Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells Aug. 23, 2011
7998877 Diffraction grating in conjunction with reduced thickness to increase efficiency of solar cells Aug. 16, 2011
7989238 Group III nitride-based compound semiconductor light-emitting device and production method therefor Aug. 2, 2011
7985690 Method for a gate last process Jul. 26, 2011
7972885 Broadband imaging device and manufacturing thereof Jul. 5, 2011
7964483 Growth method for nitride semiconductor epitaxial layers Jun. 21, 2011
7951695 Method for reducing plasma discharge damage during processing May. 31, 2011
7943530 Semiconductor nanowires having mobility-optimized orientations May. 17, 2011
7911035 Directionally controlled growth of nanowhiskers Mar. 22, 2011
7910395 LED structure Mar. 22, 2011
7897489 Selective activation of hydrogen passivated silicon and germanium surfaces Mar. 1, 2011
7888266 Band gap modulated optical sensor Feb. 15, 2011

1 2 3 4










 
 
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