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Class Information
Number: 257/E21.125
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo) > Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (epo) > Defect and dislocati on suppression due to lattice mismatch, e.g., lattice adaptation (epo)
Description: This subclass is indented under subclass E21.124. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B2.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8664084 Method for making a thin-film element Mar. 4, 2014
8652918 Nitride semiconductor structure Feb. 18, 2014
8629045 Reduction of edge effects from aspect ratio trapping Jan. 14, 2014
8618639 Semiconductor structure, semiconductor device having a semiconductor structure, and method for manufacturing a semiconductor structure Dec. 31, 2013
8580593 Epitaxial formation structures and associated methods of manufacturing solid state lighting devices Nov. 12, 2013
8545627 Zirconium and hafnium boride alloy templates on silicon for nitride integration applications Oct. 1, 2013
8541794 Nitride semiconductor light-emitting devices Sep. 24, 2013
8465997 Manufacturing method of group III nitride semiconductor Jun. 18, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8349711 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement Jan. 8, 2013
8310028 Semiconductor device with crystal defect and manufacturing method thereof Nov. 13, 2012
8304276 Film stress management for MEMS through selective relaxation Nov. 6, 2012
8298840 Dual sided processing and devices based on freestanding nitride and zinc oxide films Oct. 30, 2012
8274097 Reduction of edge effects from aspect ratio trapping Sep. 25, 2012
8212287 Nitride semiconductor structure and method of making same Jul. 3, 2012
8198681 Semiconductor component with stress-absorbing semiconductor layer Jun. 12, 2012
8178951 Compound semiconductor substrate and control for electrical property thereof May. 15, 2012
8173991 Optoelectronic semiconductor chip having a multiple quantum well structure May. 8, 2012
8173469 Fabrication method of light emitting device May. 8, 2012
8154022 Process for fabricating a structure for epitaxy without an exclusion zone Apr. 10, 2012
8148241 Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films Apr. 3, 2012
8138495 Film stress management for MEMS through selective relaxation Mar. 20, 2012
8129747 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Mar. 6, 2012
8093625 Nitride semiconductor light emitting device and method for fabricating the same Jan. 10, 2012
8063397 Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission Nov. 22, 2011
8058090 Apparatus and method of manufacturing solar cells Nov. 15, 2011
8039901 Epitaxial source/drain transistor Oct. 18, 2011
8039291 Demounting of inverted metamorphic multijunction solar cells Oct. 18, 2011
8017415 Dual sided processing and devices based on freestanding nitride and zinc oxide films Sep. 13, 2011
7943494 Method for blocking dislocation propagation of semiconductor May. 17, 2011
7923273 Stackable optoelectronics chip-to-chip interconnects and method of manufacturing Apr. 12, 2011
7915636 III-nitride semiconductor light emitting device Mar. 29, 2011
7868335 Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs Jan. 11, 2011
7858424 Method for manufacturing a sensor array including a monolithically integrated circuit Dec. 28, 2010
7858450 Optic mask and manufacturing method of thin film transistor array panel using the same Dec. 28, 2010
7829442 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Nov. 9, 2010
7812340 Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same Oct. 12, 2010
7812374 Semiconductor device and fabrication method thereof Oct. 12, 2010
7790489 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer Sep. 7, 2010
7790563 Semiconductor device, electronic device and method for manufacturing semiconductor device Sep. 7, 2010
7741146 Demounting of inverted metamorphic multijunction solar cells Jun. 22, 2010
7696071 Group III nitride based semiconductor and production method therefor Apr. 13, 2010
7670928 Ultra-thin oxide bonding for S1 to S1 dual orientation bonding Mar. 2, 2010
7642544 Production method for semiconductor component with stress-carrying semiconductor layer Jan. 5, 2010
7615420 Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate Nov. 10, 2009
7566940 Electromechanical devices having overlying support structures Jul. 28, 2009
7459718 Field effect transistor Dec. 2, 2008
7396747 Hetero-integrated strained silicon n- and p-MOSFETs Jul. 8, 2008
7375385 Semiconductor heterostructures having reduced dislocation pile-ups May. 20, 2008
7368310 Light generating semiconductor device and method of making the same May. 6, 2008

1 2 3 4 5 6 7










 
 
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