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Class Information
Number: 257/E21.124
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo) > Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (epo) > Heteroepitaxy (epo)
Description: This subclass is indented under subclass E21.123. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8664084 Method for making a thin-film element Mar. 4, 2014
8609451 Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells Dec. 17, 2013
8476101 Method of fabricating patterned CZT and CdTe devices Jul. 2, 2013
8378385 Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth Feb. 19, 2013
8293553 Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element Oct. 23, 2012
8188573 Nitride semiconductor structure May. 29, 2012
8093625 Nitride semiconductor light emitting device and method for fabricating the same Jan. 10, 2012
7964945 Glass cap molding package, manufacturing method thereof and camera module Jun. 21, 2011
7915099 Beam irradiation apparatus, beam irradiation method, and method for manufacturing semiconductor device Mar. 29, 2011
7785989 Growth substrates for inverted metamorphic multijunction solar cells Aug. 31, 2010
7772127 Semiconductor heterostructure and method for forming same Aug. 10, 2010
7700447 Method for making a semiconductor device comprising a lattice matching layer Apr. 20, 2010
7691657 Light emitting device using nitride semiconductor and fabrication method of the same Apr. 6, 2010
7675091 Semiconductor wafer and method of fabricating the same Mar. 9, 2010
7459374 Method of manufacturing a semiconductor heterostructure Dec. 2, 2008
7063997 Process for producing nitride semiconductor light-emitting device Jun. 20, 2006
6440214 Method of growing a semiconductor layer Aug. 27, 2002
5759908 Method for forming SiC-SOI structures Jun. 2, 1998
5714006 Method of growing compound semiconductor layer Feb. 3, 1998
5614435 Quantum dot fabrication process using strained epitaxial growth Mar. 25, 1997
5500389 Process for formation for hetero junction structured film utilizing V grooves Mar. 19, 1996
5356510 Method for the growing of heteroepitaxial layers Oct. 18, 1994
5330611 Cubic boron nitride carbide films Jul. 19, 1994
5300320 Chemical vapor deposition from single organometallic precursors Apr. 5, 1994
5066355 Method of producing hetero structure Nov. 19, 1991
5047365 Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth Sep. 10, 1991
4902643 Method of selective epitaxial growth for compound semiconductors Feb. 20, 1990
4757030 Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth Jul. 12, 1988
4710478 Method for making germanium/gallium arsenide high mobility complementary logic transistors Dec. 1, 1987
4575924 Process for fabricating quantum-well devices utilizing etch and refill techniques Mar. 18, 1986











 
 
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