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Class Information
Number: 257/E21.124
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo) > Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (epo) > Heteroepitaxy (epo)
Description: This subclass is indented under subclass E21.123. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7675091 |
Semiconductor wafer and method of fabricating the same |
Mar. 9, 2010 |
| 7459374 |
Method of manufacturing a semiconductor heterostructure |
Dec. 2, 2008 |
| 7063997 |
Process for producing nitride semiconductor light-emitting device |
Jun. 20, 2006 |
| 6440214 |
Method of growing a semiconductor layer |
Aug. 27, 2002 |
| 5759908 |
Method for forming SiC-SOI structures |
Jun. 2, 1998 |
| 5714006 |
Method of growing compound semiconductor layer |
Feb. 3, 1998 |
| 5614435 |
Quantum dot fabrication process using strained epitaxial growth |
Mar. 25, 1997 |
| 5500389 |
Process for formation for hetero junction structured film utilizing V grooves |
Mar. 19, 1996 |
| 5356510 |
Method for the growing of heteroepitaxial layers |
Oct. 18, 1994 |
| 5330611 |
Cubic boron nitride carbide films |
Jul. 19, 1994 |
| 5300320 |
Chemical vapor deposition from single organometallic precursors |
Apr. 5, 1994 |
| 5066355 |
Method of producing hetero structure |
Nov. 19, 1991 |
| 5047365 |
Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth |
Sep. 10, 1991 |
| 4902643 |
Method of selective epitaxial growth for compound semiconductors |
Feb. 20, 1990 |
| 4757030 |
Method of making group IV single crystal layers on group III-V substrates using solid phase epitaxial growth |
Jul. 12, 1988 |
| 4710478 |
Method for making germanium/gallium arsenide high mobility complementary logic transistors |
Dec. 1, 1987 |
| 4575924 |
Process for fabricating quantum-well devices utilizing etch and refill techniques |
Mar. 18, 1986 |
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