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Class Information
Number: 257/E21.123
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo) > Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B6.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.128 Carbon on a noncarbon semiconductor substrate (epo) 27
257/E21.125 Defect and dislocati on suppression due to lattice mismatch, e.g., lattice adaptation (epo) 348
257/E21.126 Group iii-v compound on dissimilar group iii-v compound (epo) 166
257/E21.127 Group iii-v compound on si or ge (epo) 301
257/E21.124 Heteroepitaxy (epo) 30

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8609451 Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells Dec. 17, 2013
8349667 Method for stabilizing germanium nanowires obtained by condensation Jan. 8, 2013
8349711 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement Jan. 8, 2013
8125073 Wafer integrated with permanent carrier and method therefor Feb. 28, 2012
8063413 Tensile strained GE for electronic and optoelectronic applications Nov. 22, 2011
7883988 Method for manufacturing semiconductor substrate Feb. 8, 2011
7871843 Method of preparing light emitting device Jan. 18, 2011
7858468 Memory devices and formation methods Dec. 28, 2010
7846814 Semiconductor layer structure and method of making the same Dec. 7, 2010
7803670 Twisted dual-substrate orientation (DSO) substrates Sep. 28, 2010
7709823 Group-III nitride vertical-rods substrate May. 4, 2010
7696071 Group III nitride based semiconductor and production method therefor Apr. 13, 2010
7691725 Method for manufacturing semiconductor device Apr. 6, 2010
7675091 Semiconductor wafer and method of fabricating the same Mar. 9, 2010
7579222 Manufacturing method of thin film device substrate Aug. 25, 2009
7511381 Thin film transistor and method of manufacturing the same Mar. 31, 2009
7449734 Junction semiconductor device and method for manufacturing the same Nov. 11, 2008
7442589 System and method for uniform multi-plane silicon oxide layer formation for optical applications Oct. 28, 2008
7416917 Method of fabricating electroluminescent display Aug. 26, 2008
7315064 Bonded wafer and method of producing bonded wafer Jan. 1, 2008
7217635 Process for preparing a bonding type semiconductor substrate May. 15, 2007
7195941 Optical devices and methods to construct the same Mar. 27, 2007
6677249 Method for manufacturing breakaway layers for detaching deposited layer systems Jan. 13, 2004
6673646 Growth of compound semiconductor structures on patterned oxide films and process for fabricating same Jan. 6, 2004
6593211 Semiconductor substrate and method for producing the same Jul. 15, 2003
6583436 Strain-engineered, self-assembled, semiconductor quantum dot lattices Jun. 24, 2003
6486042 Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby Nov. 26, 2002
6461944 Methods for growth of relatively large step-free SiC crystal surfaces Oct. 8, 2002
6261929 Methods of forming a plurality of semiconductor layers using spaced trench arrays Jul. 17, 2001
6258637 Method for thin film deposition on single-crystal semiconductor substrates Jul. 10, 2001
6254794 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution Jul. 3, 2001
6171512 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution Jan. 9, 2001
6107113 Method of relaxing a stressed film by melting an interface layer Aug. 22, 2000
6107197 Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth Aug. 22, 2000
5993538 Method of forming single-crystalline thin film using beam irradiating method Nov. 30, 1999
5980631 Method for manufacturing III-V semiconductor layers containing nitrogen Nov. 9, 1999
5920795 Method for manufacturing semiconductor device Jul. 6, 1999
5895248 Manufacture of a semiconductor device with selectively deposited semiconductor zone Apr. 20, 1999
5882401 Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth Mar. 16, 1999
5872022 Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser Feb. 16, 1999
5861058 Composite structure and method for the production thereof Jan. 19, 1999
5834363 Method of manufacturing semiconductor wafer, semiconductor wafer manufactured by the same, semiconductor epitaxial wafer, and method of manufacturing the semiconductor epitaxial wafer Nov. 10, 1998
5814150 Method of and apparatus for forming single-crystalline thin film, beam irradiator, beam irradiating method and beam reflecting device Sep. 29, 1998
5795385 Method of forming single-crystalline thin film by beam irradiator Aug. 18, 1998
5780343 Method of producing high quality silicon surface for selective epitaxial growth of silicon Jul. 14, 1998
5776253 Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device Jul. 7, 1998
5767020 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution Jun. 16, 1998
5735949 Method of producing electronic, electrooptical and optical components Apr. 7, 1998
5714765 Method of fabricating a compositional semiconductor device Feb. 3, 1998
5693139 Growth of doped semiconductor monolayers Dec. 2, 1997

1 2 3 4

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