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Class Information
Number: 257/E21.122
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5024723 |
Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning |
Jun. 18, 1991 |
| 5009689 |
Method of manufacturing a semiconductor device |
Apr. 23, 1991 |
| 4994139 |
Method of manufacturing a light-conducting device |
Feb. 19, 1991 |
| 4983251 |
Method of manufacturing semiconductor devices |
Jan. 8, 1991 |
| 4970175 |
Method of manufacturing a semiconductor device using SEG and a transitory substrate |
Nov. 13, 1990 |
| 4962879 |
Method for bubble-free bonding of silicon wafers |
Oct. 16, 1990 |
| 4948748 |
Manufacture of a substrate structure for a composite semiconductor device using wafer bonding and epitaxial refill |
Aug. 14, 1990 |
| 4939101 |
Method of making direct bonded wafers having a void free interface |
Jul. 3, 1990 |
| 4891329 |
Method of forming a nonsilicon semiconductor on insulator structure |
Jan. 2, 1990 |
| 4888304 |
Method of manufacturing an soi-type semiconductor device |
Dec. 19, 1989 |
| 4883215 |
Method for bubble-free bonding of silicon wafers |
Nov. 28, 1989 |
| 4851078 |
Dielectric isolation process using double wafer bonding |
Jul. 25, 1989 |
| 4837182 |
Method of producing sheets of crystalline material |
Jun. 6, 1989 |
| 4832761 |
Process for manufacturing gallium arsenide monolithic microwave integrated circuits using nonphotosensitive acid resist for handling |
May. 23, 1989 |
| 4826787 |
Method for adhesion of silicon or silicon dioxide plate |
May. 2, 1989 |
| 4816420 |
Method of producing tandem solar cell devices from sheets of crystalline material |
Mar. 28, 1989 |
| 4794445 |
Semiconductor device |
Dec. 27, 1988 |
| 4774196 |
Method of bonding semiconductor wafers |
Sep. 27, 1988 |
| 4771016 |
Using a rapid thermal process for manufacturing a wafer bonded soi semiconductor |
Sep. 13, 1988 |
| 4727047 |
Method of producing sheets of crystalline material |
Feb. 23, 1988 |
| 4649627 |
Method of fabricating silicon-on-insulator transistors with a shared element |
Mar. 17, 1987 |
| 4638552 |
Method of manufacturing semiconductor substrate |
Jan. 27, 1987 |
| 4614119 |
Resonant hollow beam and method |
Sep. 30, 1986 |
| 4601779 |
Method of producing a thin silicon-on-insulator layer |
Jul. 22, 1986 |
| 4501060 |
Dielectrically isolated semiconductor devices |
Feb. 26, 1985 |
| 4285714 |
Electrostatic bonding using externally applied pressure |
Aug. 25, 1981 |
| 4226649 |
Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques |
Oct. 7, 1980 |
| 4017341 |
Method of manufacturing semiconductor integrated circuit with prevention of substrate warpage |
Apr. 12, 1977 |
| 3997381 |
Method of manufacture of an epitaxial semiconductor layer on an insulating substrate |
Dec. 14, 1976 |
| 3974006 |
Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate |
Aug. 10, 1976 |
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