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Class Information
Number: 257/E21.122
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5281834 |
Non-silicon and silicon bonded structure and method of manufacture |
Jan. 25, 1994 |
| 5281840 |
High mobility integrated drivers for active matrix displays |
Jan. 25, 1994 |
| 5280184 |
Three dimensional integrated circuits with lift-off |
Jan. 18, 1994 |
| 5277748 |
Semiconductor device substrate and process for preparing the same |
Jan. 11, 1994 |
| 5276338 |
Bonded wafer structure having a buried insulation layer |
Jan. 4, 1994 |
| 5273616 |
Method of producing sheets of crystalline material and devices made therefrom |
Dec. 28, 1993 |
| 5270221 |
Method of fabricating high quantum efficiency solid state sensors |
Dec. 14, 1993 |
| 5266135 |
Wafer bonding process employing liquid oxidant |
Nov. 30, 1993 |
| 5266824 |
SOI semiconductor substrate |
Nov. 30, 1993 |
| 5261999 |
Process for making strain-compensated bonded silicon-on-insulator material free of dislocations |
Nov. 16, 1993 |
| 5258322 |
Method of producing semiconductor substrate |
Nov. 2, 1993 |
| 5258323 |
Single crystal silicon on quartz |
Nov. 2, 1993 |
| 5256581 |
Silicon film with improved thickness control |
Oct. 26, 1993 |
| 5244830 |
Method for manufacturing a semiconductor substrate having a compound semiconductor layer on a single-crystal silicon wafer |
Sep. 14, 1993 |
| 5244817 |
Method of making backside illuminated image sensors |
Sep. 14, 1993 |
| 5240876 |
Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process |
Aug. 31, 1993 |
| 5240883 |
Method of fabricating SOI substrate with uniform thin silicon film |
Aug. 31, 1993 |
| 5238865 |
Process for producing laminated semiconductor substrate |
Aug. 24, 1993 |
| 5238875 |
Method of producing a bonded wafer |
Aug. 24, 1993 |
| 5236118 |
Aligned wafer bonding |
Aug. 17, 1993 |
| 5234535 |
Method of producing a thin silicon-on-insulator layer |
Aug. 10, 1993 |
| 5234860 |
Thinning of imaging device processed wafers |
Aug. 10, 1993 |
| 5232870 |
Method for production of bonded wafer |
Aug. 3, 1993 |
| 5231045 |
Method of producing semiconductor-on-insulator structure by besol process with charged insulating layers |
Jul. 27, 1993 |
| 5228948 |
Method for fabricating recrystallized semiconductor film |
Jul. 20, 1993 |
| 5217564 |
Method of producing sheets of crystalline material and devices made therefrom |
Jun. 8, 1993 |
| 5218213 |
SOI wafer with sige |
Jun. 8, 1993 |
| 5213657 |
Method for making uniform the thickness of a Si single crystal thin film |
May. 25, 1993 |
| 5213993 |
Method of manufacturing semiconductor substrate dielectric isolating structure |
May. 25, 1993 |
| 5202273 |
Method of manufacturing a vertical semiconductor device |
Apr. 13, 1993 |
| 5183769 |
Vertical current flow semiconductor device utilizing wafer bonding |
Feb. 2, 1993 |
| 5152857 |
Method for preparing a substrate for semiconductor devices |
Oct. 6, 1992 |
| 5147808 |
High energy ion implanted silicon on insulator structure |
Sep. 15, 1992 |
| 5138421 |
Semiconductor substrate and method of producing the same, and semiconductor device |
Aug. 11, 1992 |
| 5136344 |
High energy ion implanted silicon on insulator structure |
Aug. 4, 1992 |
| 5132770 |
Semiconductor device having improved multi-layered substrate structure |
Jul. 21, 1992 |
| 5131968 |
Gradient chuck method for wafer bonding employing a convex pressure |
Jul. 21, 1992 |
| 5110748 |
Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display |
May. 5, 1992 |
| 5102821 |
SOI/semiconductor heterostructure fabrication by wafer bonding of polysilicon to titanium |
Apr. 7, 1992 |
| 5098850 |
Process for producing substrate for selective crystal growth, selective crystal growth process and process for producing solar battery by use of them |
Mar. 24, 1992 |
| 5091331 |
Ultra-thin circuit fabrication by controlled wafer debonding |
Feb. 25, 1992 |
| 5081519 |
Semiconductor device |
Jan. 14, 1992 |
| 5071785 |
Method for preparing a substrate for forming semiconductor devices by bonding warped wafers |
Dec. 10, 1991 |
| 5072277 |
Semiconductor device with gradually varying doping levels to compensate for thickness variations |
Dec. 10, 1991 |
| 5066993 |
Semiconductor device having semiconductor-on-insulator structure |
Nov. 19, 1991 |
| 5064781 |
Method of fabricating integrated silicon and non-silicon semiconductor devices |
Nov. 12, 1991 |
| 5054683 |
Method of bonding together two bodies with silicon oxide and practically pure boron |
Oct. 8, 1991 |
| 5034343 |
Manufacturing ultra-thin wafer using a handle wafer |
Jul. 23, 1991 |
| 5032544 |
Process for producing semiconductor device substrate using polishing guard |
Jul. 16, 1991 |
| 5028558 |
Method of manufacturing a silicon on insulator semiconductor |
Jul. 2, 1991 |
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