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Class Information
Number: 257/E21.122
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5603779 |
Bonded wafer and method of fabrication thereof |
Feb. 18, 1997 |
| 5597410 |
Method to make a SOI wafer for IC manufacturing |
Jan. 28, 1997 |
| 5591678 |
Process of manufacturing a microelectric device using a removable support substrate and etch-stop |
Jan. 7, 1997 |
| 5588994 |
Method of producing sheets of crystalline material and devices made therefrom |
Dec. 31, 1996 |
| 5589083 |
Method of manufacturing microstructure by the anisotropic etching and bonding of substrates |
Dec. 31, 1996 |
| 5569620 |
Bonded wafer processing with metal silicidation |
Oct. 29, 1996 |
| 5556503 |
Apparatus for thinning a semiconductor film on an insulating film |
Sep. 17, 1996 |
| 5549747 |
Method of producing sheets of crystalline material and devices made therefrom |
Aug. 27, 1996 |
| 5540785 |
Fabrication of defect free silicon on an insulating substrate |
Jul. 30, 1996 |
| 5536354 |
Solid phase bonding method |
Jul. 16, 1996 |
| 5517047 |
Bonded wafer processing |
May. 14, 1996 |
| 5514235 |
Method of making bonded wafers |
May. 7, 1996 |
| 5504376 |
Stacked-type semiconductor device |
Apr. 2, 1996 |
| 5488012 |
Silicon on insulator with active buried regions |
Jan. 30, 1996 |
| 5478408 |
SOI substrate and manufacturing method therefor |
Dec. 26, 1995 |
| 5468674 |
Method for forming low and high minority carrier lifetime layers in a single semiconductor structure |
Nov. 21, 1995 |
| 5462883 |
Method of fabricating defect-free silicon on an insulating substrate |
Oct. 31, 1995 |
| 5459335 |
Semiconductor substrate having a thin film semiconductor layer bonded on a support substrate through an adhesive layer |
Oct. 17, 1995 |
| 5459104 |
Process for production of semiconductor substrate |
Oct. 17, 1995 |
| 5441591 |
Silicon to sapphire bond |
Aug. 15, 1995 |
| 5441911 |
Silicon carbide wafer bonded to a silicon wafer |
Aug. 15, 1995 |
| 5413951 |
Composite semiconductor substrate and a fabrication process thereof |
May. 9, 1995 |
| 5414276 |
Transistors using crystalline silicon devices on glass |
May. 9, 1995 |
| 5407856 |
Direct substrate bonding |
Apr. 18, 1995 |
| 5401983 |
Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices |
Mar. 28, 1995 |
| 5399231 |
Method of forming crystalline silicon devices on glass |
Mar. 21, 1995 |
| 5395788 |
Method of producing semiconductor substrate |
Mar. 7, 1995 |
| 5387555 |
Bonded wafer processing with metal silicidation |
Feb. 7, 1995 |
| 5383993 |
Method of bonding semiconductor substrates |
Jan. 24, 1995 |
| 5376579 |
Schemes to form silicon-on-diamond structure |
Dec. 27, 1994 |
| 5373184 |
SOI/semiconductor heterostructure fabrication by wafer bonding |
Dec. 13, 1994 |
| 5366923 |
Bonded wafer structure having a buried insulation layer |
Nov. 22, 1994 |
| 5367189 |
Vertical semiconductor device |
Nov. 22, 1994 |
| 5362682 |
Method of producing sheets of crystalline material and devices made therefrom |
Nov. 8, 1994 |
| 5362667 |
Bonded wafer processing |
Nov. 8, 1994 |
| 5355022 |
Stacked-type semiconductor device |
Oct. 11, 1994 |
| 5349207 |
Silicon carbide wafer bonded to a silicon wafer |
Sep. 20, 1994 |
| 5346848 |
Method of bonding silicon and III-V semiconductor materials |
Sep. 13, 1994 |
| 5344524 |
SOI substrate fabrication |
Sep. 6, 1994 |
| 5340435 |
Bonded wafer and method of manufacturing it |
Aug. 23, 1994 |
| 5334273 |
Wafer bonding using trapped oxidizing vapor |
Aug. 2, 1994 |
| 5328549 |
Method of producing sheets of crystalline material and devices made therefrom |
Jul. 12, 1994 |
| 5323059 |
Vertical current flow semiconductor device utilizing wafer bonding |
Jun. 21, 1994 |
| 5318652 |
Wafer bonding enhancement technique |
Jun. 7, 1994 |
| 5310446 |
Method for producing semiconductor film |
May. 10, 1994 |
| 5308779 |
Method of making high mobility integrated drivers for active matrix displays |
May. 3, 1994 |
| 5307433 |
Optical connection member of silicon and method for the manufacture thereof |
Apr. 26, 1994 |
| 5295395 |
Diaphragm-based-sensors |
Mar. 22, 1994 |
| 5286671 |
Fusion bonding technique for use in fabricating semiconductor devices |
Feb. 15, 1994 |
| 5284803 |
Metod of manufacturing a semiconductor body using a carrier wafer and a monocrystalline semiconducting top layer |
Feb. 8, 1994 |
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