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Class Information
Number: 257/E21.122
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6312797 |
Method for manufacturing bonded wafer and bonded wafer |
Nov. 6, 2001 |
| 6306729 |
Semiconductor article and method of manufacturing the same |
Oct. 23, 2001 |
| 6287941 |
Surface finishing of SOI substrates using an EPI process |
Sep. 11, 2001 |
| 6284628 |
Method of recycling a delaminated wafer and a silicon wafer used for the recycling |
Sep. 4, 2001 |
| 6281038 |
Methods for forming assemblies |
Aug. 28, 2001 |
| 6281032 |
Manufacturing method for nitride III-V compound semiconductor device using bonding |
Aug. 28, 2001 |
| 6274508 |
Apparatuses and methods used in forming assemblies |
Aug. 14, 2001 |
| 6258698 |
Process for producing semiconductor substrate |
Jul. 10, 2001 |
| 6255195 |
Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method |
Jul. 3, 2001 |
| 6255731 |
SOI bonding structure |
Jul. 3, 2001 |
| 6242324 |
Method for fabricating singe crystal materials over CMOS devices |
Jun. 5, 2001 |
| 6239004 |
Method of forming oxide film on an SOI layer and method of fabricating a bonded wafer |
May. 29, 2001 |
| 6224668 |
Method for producing SOI substrate and SOI substrate |
May. 1, 2001 |
| 6225651 |
Structure with a micro-electronic component made of a semi-conductor material difficult to etch and with metallized holes |
May. 1, 2001 |
| 6221738 |
Substrate and production method thereof |
Apr. 24, 2001 |
| 6214702 |
Methods of forming semiconductor substrates using wafer bonding techniques and intermediate substrates formed thereby |
Apr. 10, 2001 |
| 6214701 |
Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus |
Apr. 10, 2001 |
| 6210479 |
Product and process for forming a semiconductor structure on a host substrate |
Apr. 3, 2001 |
| 6200878 |
SOI substrate processing method |
Mar. 13, 2001 |
| 6199563 |
Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
Mar. 13, 2001 |
| 6198159 |
Bonded wafer, process for producing same and substrate |
Mar. 6, 2001 |
| 6191037 |
Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes |
Feb. 20, 2001 |
| 6190937 |
Method of producing semiconductor member and method of producing solar cell |
Feb. 20, 2001 |
| 6190985 |
Practical way to remove heat from SOI devices |
Feb. 20, 2001 |
| 6183857 |
Substrate for high frequency integrated circuits |
Feb. 6, 2001 |
| 6177359 |
Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
Jan. 23, 2001 |
| 6159778 |
Methods of forming semiconductor-on-insulator field effect transistors with reduced floating body parasitics |
Dec. 12, 2000 |
| 6156624 |
Method for production of SOI substrate by pasting and SOI substrate |
Dec. 5, 2000 |
| 6143628 |
Semiconductor substrate and method of manufacturing the same |
Nov. 7, 2000 |
| 6140209 |
Process for forming an SOI substrate |
Oct. 31, 2000 |
| 6133112 |
Thin film formation process |
Oct. 17, 2000 |
| RE36890 |
Gradient chuck method for wafer bonding employing a convex pressure |
Oct. 3, 2000 |
| 6127243 |
Method for bonding two wafers |
Oct. 3, 2000 |
| 6120597 |
Crystal ion-slicing of single-crystal films |
Sep. 19, 2000 |
| 6114188 |
Method of fabricating an integrated complex-transition metal oxide device |
Sep. 5, 2000 |
| 6107638 |
Silicon nitride circuit substrate and semiconductor device containing same |
Aug. 22, 2000 |
| 6100166 |
Process for producing semiconductor article |
Aug. 8, 2000 |
| 6093577 |
Low temperature adhesion bonding method for composite substrates |
Jul. 25, 2000 |
| 6087242 |
Method to improve commercial bonded SOI material |
Jul. 11, 2000 |
| 6084284 |
Integrated circuit including inverted dielectric isolation |
Jul. 4, 2000 |
| 6083324 |
Gettering technique for silicon-on-insulator wafers |
Jul. 4, 2000 |
| 6071795 |
Separation of thin films from transparent substrates by selective optical processing |
Jun. 6, 2000 |
| 6066542 |
Method for the manufacture of a power semiconductor component |
May. 23, 2000 |
| 6059895 |
Strained Si/SiGe layers on insulator |
May. 9, 2000 |
| 6051498 |
Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish |
Apr. 18, 2000 |
| 6033925 |
Method for manufacturing a SOI-type semiconductor structure |
Mar. 7, 2000 |
| 6013563 |
Controlled cleaning process |
Jan. 11, 2000 |
| 6010579 |
Reusable substrate for thin film separation |
Jan. 4, 2000 |
| 6008110 |
Semiconductor substrate and method of manufacturing same |
Dec. 28, 1999 |
| 6004866 |
Method for manufacturing bonded wafer and bonded wafer manufactured thereby |
Dec. 21, 1999 |
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