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Class Information
Number: 257/E21.122
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B2.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.123 Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (epo) 142


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
6607931 Method of producing an optically transparent substrate and method of producing a light-emitting semiconductor chip Aug. 19, 2003
6596569 Thin film transistors Jul. 22, 2003
6576334 Bonding materials Jun. 10, 2003
6569748 Substrate and production method thereof May. 27, 2003
6562648 Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials May. 13, 2003
6555408 Methods for transferring elements from a template to a substrate Apr. 29, 2003
6552408 Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes Apr. 22, 2003
6548382 Gettering technique for wafers made using a controlled cleaving process Apr. 15, 2003
6548375 Method of preparing silicon-on-insulator substrates particularly suited for microwave applications Apr. 15, 2003
6540827 Slicing of single-crystal films using ion implantation Apr. 1, 2003
6537892 Glass frit wafer bonding process and packages formed thereby Mar. 25, 2003
6537846 Substrate bonding using a selenidation reaction Mar. 25, 2003
6534382 Process for producing semiconductor article Mar. 18, 2003
6534385 Method of fusion for heteroepitaxial layers and overgrowth thereon Mar. 18, 2003
6534384 Method for manufacturing SOI wafer including heat treatment in an oxidizing atmosphere Mar. 18, 2003
6534383 Thin film formation process by clearing the implanted layer with laser radiation Mar. 18, 2003
6528387 SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same Mar. 4, 2003
6521511 Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus Feb. 18, 2003
6503321 Slicing of single-crystal films using ion implantation Jan. 7, 2003
6503847 Room temperature wafer-to-wafer bonding by polydimethylsiloxane Jan. 7, 2003
6497763 Electronic device with composite substrate Dec. 24, 2002
6495928 Transfer mark structure for multi-layer interconnecting and method for the manufacture thereof Dec. 17, 2002
6475926 Substrate for high frequency integrated circuits Nov. 5, 2002
6476462 MOS-type semiconductor device and method for making same Nov. 5, 2002
6472289 Dielectrically separated wafer and method of manufacturing the same Oct. 29, 2002
6465327 Method for producing a thin membrane and resulting structure with membrane Oct. 15, 2002
6451670 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method Sep. 17, 2002
6448102 Method for nitride based laser diode with growth substrate removed Sep. 10, 2002
6429095 Semiconductor article and method of manufacturing the same Aug. 6, 2002
6428620 Substrate processing method and apparatus and SOI substrate Aug. 6, 2002
6420242 Separation of thin films from transparent substrates by selective optical processing Jul. 16, 2002
6417075 Method for producing thin substrate layers Jul. 9, 2002
6417108 Semiconductor substrate and method of manufacturing the same Jul. 9, 2002
6413874 Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same Jul. 2, 2002
6406636 Methods for wafer to wafer bonding using microstructures Jun. 18, 2002
6407367 Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article Jun. 18, 2002
6387736 Method and structure for bonding layers in a semiconductor device May. 14, 2002
6387829 Separation process for silicon-on-insulator wafer fabrication May. 14, 2002
6388290 Single crystal silicon on polycrystalline silicon integrated circuits May. 14, 2002
6380099 Porous region removing method and semiconductor substrate manufacturing method Apr. 30, 2002
6372600 Etch stops and alignment marks for bonded wafers Apr. 16, 2002
6365429 Method for nitride based laser diode with growth substrate removed using an intermediate substrate Apr. 2, 2002
6362075 Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide Mar. 26, 2002
6362069 Long-wavelength VCSELs and method of manufacturing same Mar. 26, 2002
6346461 Electroless epitaxial etching for semiconductor applications Feb. 12, 2002
6344662 Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages Feb. 5, 2002
6337030 Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method Jan. 8, 2002
6329265 Method of making a semiconductor device using processing from both sides of a workpiece Dec. 11, 2001
6328841 Process for joining inorganic substrates in a permanent manner Dec. 11, 2001
6316332 Method for joining wafers at a low temperature and low stress Nov. 13, 2001

1 2 3 4 5 6 7 8 9


 
 
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