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Class Information
Number: 257/E21.121
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Substrate is crystalline insulating material, e.g., sapphire (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B4.


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
7459352 Semiconductor device, and manufacturing method thereof Dec. 2, 2008
7442589 System and method for uniform multi-plane silicon oxide layer formation for optical applications Oct. 28, 2008
7416924 Organic light emitting display with single crystalline silicon TFT and method of fabricating the same Aug. 26, 2008
7399692 III-nitride semiconductor fabrication Jul. 15, 2008
7393723 Method of manufacturing a semiconductor device Jul. 1, 2008
7364933 Image sensor and method for forming the same Apr. 29, 2008
7358544 Nitride semiconductor light emitting device Apr. 15, 2008
7358162 Method of manufacturing semiconductor device Apr. 15, 2008
7327000 Patterned thin film graphite devices and method for making same Feb. 5, 2008
7315064 Bonded wafer and method of producing bonded wafer Jan. 1, 2008
7183585 Semiconductor device and a method for the manufacture thereof Feb. 27, 2007
7135715 Co-doping for fermi level control in semi-insulating Group III nitrides Nov. 14, 2006
7067856 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same Jun. 27, 2006
7063997 Process for producing nitride semiconductor light-emitting device Jun. 20, 2006
7042150 Light-emitting device, method of fabricating the device, and LED lamp using the device May. 9, 2006
7033854 Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate Apr. 25, 2006
7033436 Crystal growth method for nitride semiconductor and formation method for semiconductor device Apr. 25, 2006
7023025 Crystal growth method of nitride semiconductor Apr. 4, 2006
7018912 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby Mar. 28, 2006
7015511 Gallium nitride-based light emitting device and method for manufacturing the same Mar. 21, 2006
6995430 Strained-semiconductor-on-insulator device structures Feb. 7, 2006
6979584 Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device Dec. 27, 2005
6967359 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same Nov. 22, 2005
6946369 Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material Sep. 20, 2005
6924159 Semiconductor substrate made of group III nitride, and process for manufacture thereof Aug. 2, 2005
6921673 Nitride semiconductor device and method of manufacturing the same Jul. 26, 2005
6918961 Group III nitride compound semiconductor device and producing method therefor Jul. 19, 2005
6900067 Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers May. 31, 2005
6897139 Group III nitride compound semiconductor device May. 24, 2005
6876009 Nitride semiconductor device and a process of manufacturing the same Apr. 5, 2005
6860943 Method for producing group III nitride compound semiconductor Mar. 1, 2005
6856005 Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same Feb. 15, 2005
6847046 Light-emitting device and method for manufacturing the same Jan. 25, 2005
6844569 Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby Jan. 18, 2005
6844246 Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it Jan. 18, 2005
6844611 III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crys Jan. 18, 2005
6841001 Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures Jan. 11, 2005
6841808 Group III nitride compound semiconductor device and method for producing the same Jan. 11, 2005
6824610 Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate Nov. 30, 2004
6821807 Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device Nov. 23, 2004
6815722 Light-emitting device with reduced lattice mismatch Nov. 9, 2004
6812051 Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure Nov. 2, 2004
6806109 Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device Oct. 19, 2004
6802902 Process for producing an epitaxial layer of gallium nitride Oct. 12, 2004
6784103 Method of formation of nanocrystals on a semiconductor structure Aug. 31, 2004
6770914 III nitride semiconductor substrate for ELO Aug. 3, 2004
6768175 Semiconductor substrate and its production method, semiconductor device comprising the same and its production method Jul. 27, 2004
6765241 Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances Jul. 20, 2004
6759715 Epitaxial base substrate and epitaxial substrate Jul. 6, 2004
6744076 Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device Jun. 1, 2004

1 2 3 4


 
 
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