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Class Information
Number: 257/E21.121
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Substrate is crystalline insulating material, e.g., sapphire (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B4.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8680554 Epitaxial structure and method for making the same Mar. 25, 2014
8674469 Isolation structure for backside illuminated image sensor Mar. 18, 2014
8664687 Nitride semiconductor light-emitting device and process for producing the same Mar. 4, 2014
8647904 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus Feb. 11, 2014
8648342 Waveguide-integrated graphene photodetectors Feb. 11, 2014
8633495 Nitride semiconductor light-emitting device and method of manufacturing the same Jan. 21, 2014
8598017 Fiber SOI substrate, semiconductor device using this, and manufacturing method thereof Dec. 3, 2013
8558250 Displays with embedded MEMS sensors and related methods Oct. 15, 2013
8551889 Manufacture method for photovoltaic module Oct. 8, 2013
8541794 Nitride semiconductor light-emitting devices Sep. 24, 2013
8536030 Semipolar semiconductor crystal and method for manufacturing the same Sep. 17, 2013
8497518 Light emitting diode Jul. 30, 2013
8492186 Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp Jul. 23, 2013
8492185 Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices Jul. 23, 2013
8450192 Growth of planar, non-polar, group-III nitride films May. 28, 2013
8436377 GaN-based light-emitting diode and method for manufacturing the same May. 7, 2013
8420543 Method for treating the dislocation in a GaN-containing semiconductor layer Apr. 16, 2013
8420458 Semiconductor device and method of producing same Apr. 16, 2013
8390023 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element Mar. 5, 2013
8384111 Method for forming sapphire substrate and semiconductor device Feb. 26, 2013
8338317 Method for processing a semiconductor wafer or die, and particle deposition device Dec. 25, 2012
8298840 Dual sided processing and devices based on freestanding nitride and zinc oxide films Oct. 30, 2012
8288260 Field effect transistor with dual etch-stop layers for improved power, performance and reproducibility Oct. 16, 2012
8236671 Method of manufacturing semiconductor device Aug. 7, 2012
8193079 Method for conductivity control of (Al,In,Ga,B)N Jun. 5, 2012
8187982 Manufacture method for photovoltaic module May. 29, 2012
8173494 Thin film transistor array and method of manufacturing the same May. 8, 2012
8173492 Method of manufacturing thin film transistor substrate May. 8, 2012
8138064 Method for producing silicon film-transferred insulator wafer Mar. 20, 2012
8138069 Substrate pretreatment for subsequent high temperature group III depositions Mar. 20, 2012
8120113 Metal line in semiconductor device Feb. 21, 2012
8084337 Growth of III-V compound semiconductor nanowires on silicon substrates Dec. 27, 2011
8076675 Light-emitting diode chip and method of manufacturing the same Dec. 13, 2011
8048786 Method for fabricating single-crystalline substrate containing gallium nitride Nov. 1, 2011
8048701 Nitride semiconductor LED using a hybrid buffer layer and a fabrication method therefor Nov. 1, 2011
8022422 Display apparatus with color pixels Sep. 20, 2011
8017415 Dual sided processing and devices based on freestanding nitride and zinc oxide films Sep. 13, 2011
7981711 Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer Jul. 19, 2011
7977673 Semiconductor layer with a Ga.sub.2O.sub.3 system Jul. 12, 2011
7951685 Method for manufacturing semiconductor epitaxial crystal substrate May. 31, 2011
7939929 Semiconductor laser device and method of fabricating semiconductor laser device May. 10, 2011
7939433 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source May. 10, 2011
7919815 Spinel wafers and methods of preparation Apr. 5, 2011
7915636 III-nitride semiconductor light emitting device Mar. 29, 2011
7892934 SOI substrate and method for manufacturing SOI substrate Feb. 22, 2011
7875932 Semiconductor on insulator apparatus Jan. 25, 2011
7867881 Method of manufacturing nitride semiconductor substrate Jan. 11, 2011
7855087 Floating sheet production apparatus and method Dec. 21, 2010
7829435 Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element Nov. 9, 2010
7816678 Organic light emitting display with single crystalline silicon TFT and method of fabricating the same Oct. 19, 2010

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