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Class Information
Number: 257/E21.12
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo) > Characterized by the post-treatment used to control the interface betw een substrate and epitaxial layer, e.g., ion implantation followed by annealing (epo)
Description: This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B20.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7442631 |
Doping method and method of manufacturing field effect transistor |
Oct. 28, 2008 |
| 7375011 |
Ex-situ doped semiconductor transport layer |
May. 20, 2008 |
| 7329596 |
Method for tuning epitaxial growth by interfacial doping and structure including same |
Feb. 12, 2008 |
| 7282381 |
Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer |
Oct. 16, 2007 |
| 7241670 |
Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen |
Jul. 10, 2007 |
| 7186626 |
Method for controlling dislocation positions in silicon germanium buffer layers |
Mar. 6, 2007 |
| 7160804 |
Method of fabricating MOS transistor by millisecond anneal |
Jan. 9, 2007 |
| 7084051 |
Manufacturing method for semiconductor substrate and manufacturing method for semiconductor device |
Aug. 1, 2006 |
| 7056789 |
Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor |
Jun. 6, 2006 |
| 7030002 |
Low temperature anneal to reduce defects in hydrogen-implanted, relaxed SiGe layer |
Apr. 18, 2006 |
| 7026249 |
SiGe lattice engineering using a combination of oxidation, thinning and epitaxial regrowth |
Apr. 11, 2006 |
| 7022593 |
SiGe rectification process |
Apr. 4, 2006 |
| 7018909 |
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate |
Mar. 28, 2006 |
| 7019332 |
Fabrication of a wavelength locker within a semiconductor structure |
Mar. 28, 2006 |
| 7001826 |
Wafer with a relaxed useful layer and method of forming the wafer |
Feb. 21, 2006 |
| 6996147 |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
Feb. 7, 2006 |
| 6992321 |
Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
Jan. 31, 2006 |
| 6972245 |
Method for co-fabricating strained and relaxed crystalline and poly-crystalline structures |
Dec. 6, 2005 |
| 6964880 |
Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby |
Nov. 15, 2005 |
| 6949812 |
Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure |
Sep. 27, 2005 |
| 6924159 |
Semiconductor substrate made of group III nitride, and process for manufacture thereof |
Aug. 2, 2005 |
| 6916717 |
Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
Jul. 12, 2005 |
| 6891232 |
Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same |
May. 10, 2005 |
| 6855992 |
Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
Feb. 15, 2005 |
| 6797992 |
Apparatus and method for fabricating a high reverse voltage semiconductor device |
Sep. 28, 2004 |
| 6793731 |
Method for recrystallizing an amorphized silicon germanium film overlying silicon |
Sep. 21, 2004 |
| 6780796 |
Method of forming relaxed SiGe layer |
Aug. 24, 2004 |
| 6774015 |
Strained silicon-on-insulator (SSOI) and method to form the same |
Aug. 10, 2004 |
| 6746902 |
Method to form relaxed sige layer with high ge content |
Jun. 8, 2004 |
| 6703293 |
Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates |
Mar. 9, 2004 |
| 6699764 |
Method for amorphization re-crystallization of Si1-xGex films on silicon substrates |
Mar. 2, 2004 |
| 6693298 |
Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
Feb. 17, 2004 |
| 6667196 |
Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
Dec. 23, 2003 |
| 6646293 |
Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
Nov. 11, 2003 |
| 6638872 |
Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates |
Oct. 28, 2003 |
| 6635110 |
Cyclic thermal anneal for dislocation reduction |
Oct. 21, 2003 |
| 6589856 |
Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
Jul. 8, 2003 |
| 6562703 |
Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content |
May. 13, 2003 |
| 6501973 |
Apparatus and method for measuring selected physical condition of an animate subject |
Dec. 31, 2002 |
| 6493497 |
Electro-optic structure and process for fabricating same |
Dec. 10, 2002 |
| 6472694 |
Microprocessor structure having a compound semiconductor layer |
Oct. 29, 2002 |
| 6472276 |
Using silicate layers for composite semiconductor |
Oct. 29, 2002 |
| 6462360 |
Integrated gallium arsenide communications systems |
Oct. 8, 2002 |
| 6352942 |
Oxidation of silicon on germanium |
Mar. 5, 2002 |
| 5495824 |
Method for forming semiconductor thin film |
Mar. 5, 1996 |
| 5463975 |
Process for producing crystal |
Nov. 7, 1995 |
| 5395793 |
Method of bandgap tuning of semiconductor quantum well structures |
Mar. 7, 1995 |
| 5391903 |
Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits |
Feb. 21, 1995 |
| 5360752 |
Method to radiation harden the buried oxide in silicon-on-insulator structures |
Nov. 1, 1994 |
| 5298434 |
Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits |
Mar. 29, 1994 |
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