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Class Information
Number: 257/E21.119
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/20B.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.122 Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo) 430
257/E21.12 Characterized by the post-treatment used to control the interface betw een substrate and epitaxial layer, e.g., ion implantation followed by annealing (epo) 69
257/E21.129 Group iva, e.g., si, c, ge on group ivb, e.g., ti, zr (epo) 105
257/E21.121 Substrate is crystalline insulating material, e.g., sapphire (epo) 200
257/E21.13 The substrate is crystalline conducting material, e.g., metallic silicide (epo) 32


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7456079 EPI wafer and method of making the same Nov. 25, 2008
7223661 Method of manufacturing semiconductor device May. 29, 2007
7060597 Manufacturing method for a silicon substrate having strained layer Jun. 13, 2006
7057204 III-V group nitride system semiconductor substrate Jun. 6, 2006
7054532 Three-dimensional photonic crystal waveguide structure and method May. 30, 2006
7052979 Production method for semiconductor crystal and semiconductor luminous element May. 30, 2006
7045808 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method May. 16, 2006
7042150 Light-emitting device, method of fabricating the device, and LED lamp using the device May. 9, 2006
7037789 Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench May. 2, 2006
7033905 Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means Apr. 25, 2006
7033912 Silicon carbide on diamond substrates and related devices and methods Apr. 25, 2006
7033858 Method for making Group III nitride devices and devices produced thereby Apr. 25, 2006
7029977 Fabrication method of semiconductor wafer Apr. 18, 2006
7030003 Compound semiconductor device, production method thereof, light-emitting device and transistor Apr. 18, 2006
7018554 Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices Mar. 28, 2006
7018909 Forming structures that include a relaxed or pseudo-relaxed layer on a substrate Mar. 28, 2006
7009270 Substrate for stressed systems and method of making same Mar. 7, 2006
6994903 Hybrid substrate and method for fabricating the same Feb. 7, 2006
6994751 Nitride-based semiconductor element and method of forming nitride-based semiconductor Feb. 7, 2006
6979584 Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device Dec. 27, 2005
6967384 Structure and method for ultra-small grain size polysilicon Nov. 22, 2005
6967122 Group III nitride compound semiconductor and method for manufacturing the same Nov. 22, 2005
6964880 Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby Nov. 15, 2005
6958253 Process for deposition of semiconductor films Oct. 25, 2005
6946373 Relaxed, low-defect SGOI for strained Si CMOS applications Sep. 20, 2005
6936851 Semiconductor light-emitting device and method for manufacturing the same Aug. 30, 2005
6919261 Method and resulting structure for manufacturing semiconductor substrates Jul. 19, 2005
6909113 Three-dimensional photonic band structures in solid materials Jun. 21, 2005
6902989 Method for manufacturing gallium nitride (GaN) based single crystalline substrate that include separating from a growth substrate Jun. 7, 2005
6902616 Method and apparatus for producing semiconductor device Jun. 7, 2005
6900115 Deposition over mixed substrates May. 31, 2005
6897138 Method and apparatus for producing group III nitride compound semiconductor May. 24, 2005
6893891 Process for fabricating a semiconductor diffraction grating using a sacrificial layer May. 17, 2005
6885031 Integrated circuit including single crystal semiconductor layer on non-crystalline layer Apr. 26, 2005
6875629 III group nitride based semiconductor element and method for manufacture thereof Apr. 5, 2005
6872988 Semiconductor films on flexible iridium substrates Mar. 29, 2005
6867459 Isotopically pure silicon-on-insulator wafers and method of making same Mar. 15, 2005
6864158 Method of manufacturing nitride semiconductor substrate Mar. 8, 2005
6844572 Light emitting semiconductor device and method of fabricating the same Jan. 18, 2005
6841490 Semiconductor substrate, SOI substrate and manufacturing method therefor Jan. 11, 2005
6841274 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same Jan. 11, 2005
6835246 Nanostructures for hetero-expitaxial growth on silicon substrates Dec. 28, 2004
6821825 Process for deposition of semiconductor films Nov. 23, 2004
6821805 Semiconductor device, semiconductor substrate, and manufacture method Nov. 23, 2004
6815726 Semiconductor device and semiconductor substrate, and method of fabricating the same Nov. 9, 2004
6806109 Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device Oct. 19, 2004
6806171 Method of producing a thin layer of crystalline material Oct. 19, 2004
6805982 Epitaxial substrates and semiconductor devices Oct. 19, 2004
6797416 GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits Sep. 28, 2004
6797532 Semiconductor device and method for manufacturing the same Sep. 28, 2004

1 2 3


 
 
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