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Class Information
Number: 257/E21.119
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Characterized by the substrate (epo)
Description: This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/20B.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.122 Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (epo) 620
257/E21.12 Characterized by the post-treatment used to control the interface betw een substrate and epitaxial layer, e.g., ion implantation followed by annealing (epo) 103
257/E21.129 Group iva, e.g., si, c, ge on group ivb, e.g., ti, zr (epo) 135
257/E21.121 Substrate is crystalline insulating material, e.g., sapphire (epo) 280
257/E21.13 The substrate is crystalline conducting material, e.g., metallic silicide (epo) 40


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8680612 Semiconductor device and manufacturing method thereof Mar. 25, 2014
8618552 Low micropipe 100 mm silicon carbide wafer Dec. 31, 2013
8530256 Production process for semiconductor device Sep. 10, 2013
8476158 Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture Jul. 2, 2013
8420543 Method for treating the dislocation in a GaN-containing semiconductor layer Apr. 16, 2013
8362460 Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails Jan. 29, 2013
8299546 Semiconductor devices with vertical extensions for lateral scaling Oct. 30, 2012
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Sep. 4, 2012
8247301 Substrate and manufacturing method therefor Aug. 21, 2012
8227826 Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture Jul. 24, 2012
8143149 Method of forming a flexible nanostructured material for photovoltaic panels Mar. 27, 2012
8124958 Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails Feb. 28, 2012
8119534 Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth Feb. 21, 2012
8021971 Structure and method to form a thermally stable silicide in narrow dimension gate stacks Sep. 20, 2011
7989926 Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof Aug. 2, 2011
7964477 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device Jun. 21, 2011
7943493 Electrical fuse having a fully silicided fuselink and enhanced flux divergence May. 17, 2011
7943451 Integration scheme for reducing border region morphology in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates May. 17, 2011
7939395 High-voltage SOI MOS device structure and method of fabrication May. 10, 2011
7928448 III-nitride light emitting device including porous semiconductor layer Apr. 19, 2011
7838388 Method for producing SOI substrate Nov. 23, 2010
7829900 Nitride-based semiconductor element and method of forming nitride-based semiconductor Nov. 9, 2010
7811908 Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture Oct. 12, 2010
7763485 Laser facet pre-coating etch for controlling leakage current Jul. 27, 2010
7700460 Semiconductor device fabrication method and electronic device fabrication method Apr. 20, 2010
7701011 Printed dopant layers Apr. 20, 2010
7683386 Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth Mar. 23, 2010
7645682 Bonding interface quality by cold cleaning and hot bonding Jan. 12, 2010
7635875 Semiconductor light emitting device Dec. 22, 2009
7524697 Method for manufactuing a semiconductor integrated circuit device Apr. 28, 2009
7456079 EPI wafer and method of making the same Nov. 25, 2008
7223661 Method of manufacturing semiconductor device May. 29, 2007
7060597 Manufacturing method for a silicon substrate having strained layer Jun. 13, 2006
7057204 III-V group nitride system semiconductor substrate Jun. 6, 2006
7052979 Production method for semiconductor crystal and semiconductor luminous element May. 30, 2006
7054532 Three-dimensional photonic crystal waveguide structure and method May. 30, 2006
7045808 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method May. 16, 2006
7042150 Light-emitting device, method of fabricating the device, and LED lamp using the device May. 9, 2006
7037789 Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench May. 2, 2006
7033905 Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means Apr. 25, 2006
7033858 Method for making Group III nitride devices and devices produced thereby Apr. 25, 2006
7033912 Silicon carbide on diamond substrates and related devices and methods Apr. 25, 2006
7030003 Compound semiconductor device, production method thereof, light-emitting device and transistor Apr. 18, 2006
7029977 Fabrication method of semiconductor wafer Apr. 18, 2006
7018909 Forming structures that include a relaxed or pseudo-relaxed layer on a substrate Mar. 28, 2006
7018554 Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices Mar. 28, 2006
7009270 Substrate for stressed systems and method of making same Mar. 7, 2006
6994751 Nitride-based semiconductor element and method of forming nitride-based semiconductor Feb. 7, 2006
6994903 Hybrid substrate and method for fabricating the same Feb. 7, 2006

1 2 3 4










 
 
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