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Class Information
Number: 257/E21.118
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using liquid deposition (epo) > Epitaxial deposition of group iii-v compound (epo) > Deposition on a semiconductor substrate not being an group iii-v compound (epo)
Description: This subclass is indented under subclass E21.117. This subclass is substantially the same in scope as ECLA classification H01L21/208C2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8647904 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus Feb. 11, 2014
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates Dec. 17, 2013
8283661 Organic EL display and method for manufacturing same Oct. 9, 2012
8188573 Nitride semiconductor structure May. 29, 2012
8183134 Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces May. 22, 2012
8148241 Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films Apr. 3, 2012
7928448 III-nitride light emitting device including porous semiconductor layer Apr. 19, 2011
7553774 Method of fabricating semiconductor optical device Jun. 30, 2009
7282381 Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer Oct. 16, 2007
7250360 Single step, high temperature nucleation process for a lattice mismatched substrate Jul. 31, 2007
6254675 Production of epitactic GaN layers on substrates Jul. 3, 2001
3933538 Method and apparatus for production of liquid phase epitaxial layers of semiconductors Jan. 20, 1976











 
 
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