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Class Information
Number: 257/E21.117
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using liquid deposition (epo) > Epitaxial deposition of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.114. This subclass is substantially the same in scope as ECLA classification H01L21/208C.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.118 Deposition on a semiconductor substrate not being an group iii-v compound (epo) 12


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8652948 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element Feb. 18, 2014
8647904 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus Feb. 11, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8617941 High-speed graphene transistor and method of fabrication by patternable hard mask materials Dec. 31, 2013
8557622 Epitaxial growth of in-plane nanowires and nanowire devices Oct. 15, 2013
8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same Sep. 24, 2013
8524581 GaN epitaxy with migration enhancement and surface energy modification Sep. 3, 2013
8513039 Method for fabricating semiconductor lighting chip Aug. 20, 2013
8349629 Semiconductor light-emitting element and method of manufacturing same Jan. 8, 2013
8314016 Low-defect density gallium nitride semiconductor structures and fabrication methods Nov. 20, 2012
8294245 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture Oct. 23, 2012
8283661 Organic EL display and method for manufacturing same Oct. 9, 2012
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Sep. 4, 2012
8252662 Method and structure for manufacture of light emitting diode devices using bulk GaN Aug. 28, 2012
8202788 Method for fabricating GaNAsSb semiconductor Jun. 19, 2012
8193016 Semiconductor laser device and method of manufacturing the same Jun. 5, 2012
8188573 Nitride semiconductor structure May. 29, 2012
8173469 Fabrication method of light emitting device May. 8, 2012
8174027 Semiconductor light emitting device and method for manufacturing same May. 8, 2012
8158490 Method for producing group III nitride-based compound semiconductor device Apr. 17, 2012
8148241 Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films Apr. 3, 2012
8133806 Systems and methods for forming semiconductor materials by atomic layer deposition Mar. 13, 2012
8110889 MOCVD single chamber split process for LED manufacturing Feb. 7, 2012
8097493 Method of manufacturing semiconductor light emitting elements Jan. 17, 2012
8043966 Method for monitoring patterning integrity of etched openings and forming conductive structures with the openings Oct. 25, 2011
8043872 Epitaxial material used for GaN based LED with low polarization effect and manufacturing method thereof Oct. 25, 2011
7989238 Group III nitride-based compound semiconductor light-emitting device and production method therefor Aug. 2, 2011
7977134 Nitride-based semiconductor light emitting diode and method of manufacturing the same Jul. 12, 2011
7964477 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device Jun. 21, 2011
7964483 Growth method for nitride semiconductor epitaxial layers Jun. 21, 2011
7951685 Method for manufacturing semiconductor epitaxial crystal substrate May. 31, 2011
7935621 Anti-fuse device structure and electroplating circuit structure and method May. 3, 2011
7928448 III-nitride light emitting device including porous semiconductor layer Apr. 19, 2011
7842595 Fabricating electronic-photonic devices having an active layer with spherical quantum dots Nov. 30, 2010
7790584 Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same Sep. 7, 2010
7791103 Group III nitride semiconductor substrate Sep. 7, 2010
7582498 Resonant cavity light emitting devices and associated method Sep. 1, 2009
7579202 Method for fabricating light emitting diode element Aug. 25, 2009
7553774 Method of fabricating semiconductor optical device Jun. 30, 2009
7498184 Production method for semiconductor device Mar. 3, 2009
7462893 Method of fabricating GaN Dec. 9, 2008
7407865 Epitaxial growth method Aug. 5, 2008
7384869 Protection of silicon from phosphoric acid using thick chemical oxide Jun. 10, 2008
7288430 Method of fabricating heteroepitaxial microstructures Oct. 30, 2007
7245017 Liquid discharge head and manufacturing method thereof Jul. 17, 2007
7132351 Method of fabricating a compound semiconductor layer Nov. 7, 2006
6984591 Precursor source mixtures Jan. 10, 2006
6890781 Transparent layer of a LED device and the method for growing the same May. 10, 2005

1 2 3 4










 
 
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