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Class Information
Number: 257/E21.117
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using liquid deposition (epo) > Epitaxial deposition of group iii-v compound (epo)
Description: This subclass is indented under subclass E21.114. This subclass is substantially the same in scope as ECLA classification H01L21/208C.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7407865 |
Epitaxial growth method |
Aug. 5, 2008 |
| 7384869 |
Protection of silicon from phosphoric acid using thick chemical oxide |
Jun. 10, 2008 |
| 7288430 |
Method of fabricating heteroepitaxial microstructures |
Oct. 30, 2007 |
| 7245017 |
Liquid discharge head and manufacturing method thereof |
Jul. 17, 2007 |
| 7132351 |
Method of fabricating a compound semiconductor layer |
Nov. 7, 2006 |
| 6984591 |
Precursor source mixtures |
Jan. 10, 2006 |
| 6890781 |
Transparent layer of a LED device and the method for growing the same |
May. 10, 2005 |
| 6383286 |
Method of making semiconductor super-atom and aggregate thereof |
May. 7, 2002 |
| 6306736 |
Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
Oct. 23, 2001 |
| 5985023 |
Method for growth of a nitrogen-doped gallium phosphide epitaxial layer |
Nov. 16, 1999 |
| 5906670 |
Making particles of uniform size |
May. 25, 1999 |
| 5733815 |
Process for fabricating intrinsic layer and applications |
Mar. 31, 1998 |
| 5514903 |
Compound semiconductor single-crystalline substrate for liquid phase epitaxial growth |
May. 7, 1996 |
| 5513593 |
Liquid-phase heteroepitaxy method |
May. 7, 1996 |
| 5407858 |
Method of making gap red light emitting element substrate by LPE |
Apr. 18, 1995 |
| 5284781 |
Method of forming light emitting diode by LPE |
Feb. 8, 1994 |
| 5264397 |
Method for activating zinc in semiconductor devices |
Nov. 23, 1993 |
| 5223079 |
Forming thin liquid phase epitaxial layers |
Jun. 29, 1993 |
| 4944811 |
Material for light emitting element and method for crystal growth thereof |
Jul. 31, 1990 |
| 4902644 |
Preservation of surface features on semiconductor surfaces |
Feb. 20, 1990 |
| 4859628 |
Interrupted liquid phase epitaxy process |
Aug. 22, 1989 |
| 4849373 |
Growth of semi-insulating indium phosphide by liquid phase epitaxy |
Jul. 18, 1989 |
| 4833103 |
Process for depositing a III-V compound layer on a substrate |
May. 23, 1989 |
| 4805178 |
Preservation of surface features on semiconductor surfaces |
Feb. 14, 1989 |
| 4798812 |
Method for liquid phase epitaxial growth |
Jan. 17, 1989 |
| 4716129 |
Method for the production of semiconductor devices |
Dec. 29, 1987 |
| 4702781 |
Liquid phase epitaxial growth method |
Oct. 27, 1987 |
| 4692194 |
Method of performing solution growth of a GaAs compound semiconductor crystal layer under control of conductivity type thereof |
Sep. 8, 1987 |
| 4662983 |
Multiple meltback procedure for LPE growth on InP |
May. 5, 1987 |
| 4632709 |
Process for preventing melt-back in the production of aluminum-containing laser devices |
Dec. 30, 1986 |
| 4629532 |
Method of growing InGaAsP on InP substrate with corrugation |
Dec. 16, 1986 |
| 4629519 |
Forming magnesium-doped Group III-V semiconductor layers by liquid phase epitaxy |
Dec. 16, 1986 |
| 4613387 |
Injection laser manufacture |
Sep. 23, 1986 |
| 4606780 |
Method for the manufacture of A.sub.3 B.sub.5 light-emitting diodes |
Aug. 19, 1986 |
| 4578126 |
Liquid phase epitaxial growth process |
Mar. 25, 1986 |
| 4551186 |
Method of making GaInAsP layers for photodetectors |
Nov. 5, 1985 |
| 4540451 |
Method for manufacturing a luminescent diode having a high frequency and high limit frequency for its modulation capability |
Sep. 10, 1985 |
| 4540450 |
InP:Te Protective layer process for reducing substrate dissociation |
Sep. 10, 1985 |
| 4507157 |
Simultaneously doped light-emitting diode formed by liquid phase epitaxy |
Mar. 26, 1985 |
| 4504328 |
Liquid phase epitaxial growth technique |
Mar. 12, 1985 |
| 4500367 |
LPE Growth on group III-V compound semiconductor substrates containing phosphorus |
Feb. 19, 1985 |
| 4479222 |
Diffusion barrier for long wavelength laser diodes |
Oct. 23, 1984 |
| 4464211 |
Method for selective area growth by liquid phase epitaxy |
Aug. 7, 1984 |
| 4386975 |
Method for the manufacture of epitaxial Ga.sub.1-x Al.sub.x As:Si film |
Jun. 7, 1983 |
| 4384398 |
Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs |
May. 24, 1983 |
| 4319937 |
Homogeneous liquid phase epitaxial growth of heterojunction materials |
Mar. 16, 1982 |
| 4319259 |
Electroluminescent element |
Mar. 9, 1982 |
| 4308820 |
Apparatus for epitaxial crystal growth from the liquid phase |
Jan. 5, 1982 |
| 4300960 |
Method of making a light emitting diode |
Nov. 17, 1981 |
| 4298410 |
Method for growing a liquid phase epitaxial layer on a semiconductor substrate |
Nov. 3, 1981 |
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