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Class Information
Number: 257/E21.115
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using liquid deposition (epo) > Epitaxial deposition of group iv elements, e.g., si, ge, c (epo)
Description: This subclass is indented under subclass E21.114. This subclass is substantially the same in scope as ECLA classification H01L21/208B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449712 |
CMOS image sensor and method for fabricating the same |
Nov. 11, 2008 |
| 7442657 |
Producing stress-relaxed crystalline layer on a substrate |
Oct. 28, 2008 |
| 7399676 |
Silicon carbide semiconductor device and method for manufacturing the same |
Jul. 15, 2008 |
| 7399686 |
Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate |
Jul. 15, 2008 |
| 7384869 |
Protection of silicon from phosphoric acid using thick chemical oxide |
Jun. 10, 2008 |
| 7344933 |
Method of forming device having a raised extension region |
Mar. 18, 2008 |
| 7288430 |
Method of fabricating heteroepitaxial microstructures |
Oct. 30, 2007 |
| 7199011 |
Method to reduce transistor gate to source/drain overlap capacitance by incorporation of carbon |
Apr. 3, 2007 |
| 6767755 |
Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device |
Jul. 27, 2004 |
| 6756289 |
Method of producing semiconductor member and method of producing solar cell |
Jun. 29, 2004 |
| 6566277 |
Liquid-phase growth method, liquid-phase growth apparatus, and solar cell |
May. 20, 2003 |
| 6541354 |
Method for forming silicon film |
Apr. 1, 2003 |
| 6503570 |
Cyclosilane compound, and solution composition and process for forming a silicon film |
Jan. 7, 2003 |
| 6492190 |
Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device |
Dec. 10, 2002 |
| 6429035 |
Method of growing silicon crystal in liquid phase and method of producing solar cell |
Aug. 6, 2002 |
| 6190937 |
Method of producing semiconductor member and method of producing solar cell |
Feb. 20, 2001 |
| 5544616 |
Crystallization from high temperature solutions of Si in Cu/Al solvent |
Aug. 13, 1996 |
| 5397736 |
Liquid epitaxial process for producing three-dimensional semiconductor structures |
Mar. 14, 1995 |
| 5326716 |
Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy |
Jul. 5, 1994 |
| 5314571 |
Crystallization from high temperature solutions of Si in copper |
May. 24, 1994 |
| 4717688 |
Liquid phase epitaxy method |
Jan. 5, 1988 |
| 4251299 |
Planar epitaxial refill using liquid phase epitaxy |
Feb. 17, 1981 |
| 4236947 |
Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon |
Dec. 2, 1980 |
| 4191602 |
Liquid phase epitaxial method of making a high power, vertical channel field effect transistor |
Mar. 4, 1980 |
| 4128440 |
Liquid phase epitaxial method of covering buried regions for devices |
Dec. 5, 1978 |
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