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Class Information
Number: 257/E21.115
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using liquid deposition (epo) > Epitaxial deposition of group iv elements, e.g., si, ge, c (epo)
Description: This subclass is indented under subclass E21.114. This subclass is substantially the same in scope as ECLA classification H01L21/208B.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.116 Deposition on a semiconductor substrate which is different from the semiconductor material being deposited, i.e., formation of heterojunction (epo) 17

Patents under this class:
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Patent Number Title Of Patent Date Issued
8709858 Tailoring the band gap of solar cells made of liquid silane by adding germanium Apr. 29, 2014
8624308 Image sensor five transistor pixel element with four control signals Jan. 7, 2014
8604529 Apparatus with photodiode region in multiple epitaxial layers Dec. 10, 2013
8552501 Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device Oct. 8, 2013
8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same Sep. 24, 2013
8530932 Replacement spacer for tunnel FETS Sep. 10, 2013
8481393 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device Jul. 9, 2013
8460983 Method for modifying and controlling the threshold voltage of thin film transistors Jun. 11, 2013
8264046 Synergy effect of alloying materials in interconnect structures Sep. 11, 2012
8198194 Methods of forming p-channel field effect transistors having SiGe source/drain regions Jun. 12, 2012
8178400 Replacement spacer for tunnel FETs May. 15, 2012
8158484 Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device Apr. 17, 2012
8143646 Stacking fault and twin blocking barrier for integrating III-V on Si Mar. 27, 2012
8115191 Self-constrained anisotropic germanium nanostructure from electroplating Feb. 14, 2012
8105955 Integrated circuit system with carbon and non-carbon silicon Jan. 31, 2012
8084312 Nitrogen based implants for defect reduction in strained silicon Dec. 27, 2011
8071442 Transistor with embedded Si/Ge material having reduced offset to the channel region Dec. 6, 2011
8030148 Structured strained substrate for forming strained transistors with reduced thickness of active layer Oct. 4, 2011
7999250 Silicon-germanium-carbon semiconductor structure Aug. 16, 2011
7951685 Method for manufacturing semiconductor epitaxial crystal substrate May. 31, 2011
7951695 Method for reducing plasma discharge damage during processing May. 31, 2011
7939454 Module and lamination process for multijunction cells May. 10, 2011
7927956 Method for making a semiconductor structure using silicon germanium Apr. 19, 2011
7928448 III-nitride light emitting device including porous semiconductor layer Apr. 19, 2011
7906439 Method of fabricating a MEMS/NEMS electromechanical component Mar. 15, 2011
7888221 Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions Feb. 15, 2011
7879666 Semiconductor resistor formed in metal gate stack Feb. 1, 2011
7867836 Method for manufacturing junction semiconductor device Jan. 11, 2011
7855404 Bipolar complementary semiconductor device Dec. 21, 2010
7851278 Semiconductor device and method for manufacturing the same Dec. 14, 2010
7851318 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device Dec. 14, 2010
7811907 Method for manufacturing semiconductor device and epitaxial growth equipment Oct. 12, 2010
7799651 Method of treating interface defects in a substrate Sep. 21, 2010
7682940 Use of Cl2 and/or HCl during silicon epitaxial film formation Mar. 23, 2010
7674728 Deposition from liquid sources Mar. 9, 2010
7666795 Method for manufacturing semiconductor device Feb. 23, 2010
7662720 3-Dimensional flash memory device and method of fabricating the same Feb. 16, 2010
7659200 Self-constrained anisotropic germanium nanostructure from electroplating Feb. 9, 2010
7642189 Synergy effect of alloying materials in interconnect structures Jan. 5, 2010
7642197 Method to improve performance of secondary active components in an esige CMOS technology Jan. 5, 2010
7622344 Method of manufacturing complementary metal oxide semiconductor transistors Nov. 24, 2009
7588980 Methods of controlling morphology during epitaxial layer formation Sep. 15, 2009
7572715 Selective epitaxy process with alternating gas supply Aug. 11, 2009
7572740 Methods for optimizing thin film formation with reactive gases Aug. 11, 2009
7498214 Semiconductor devices and manufacturing methods of the same Mar. 3, 2009
7488666 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device Feb. 10, 2009
7449712 CMOS image sensor and method for fabricating the same Nov. 11, 2008
7442657 Producing stress-relaxed crystalline layer on a substrate Oct. 28, 2008
7399676 Silicon carbide semiconductor device and method for manufacturing the same Jul. 15, 2008
7399686 Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate Jul. 15, 2008

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