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Class Information
Number: 257/E21.113
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo) > Deposition on an insulating or a metallic substrate (epo)
Description: This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C3.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7399692 |
III-nitride semiconductor fabrication |
Jul. 15, 2008 |
| 7276732 |
Thin film transistor array panel |
Oct. 2, 2007 |
| 7220324 |
Technique for the growth of planar semi-polar gallium nitride |
May. 22, 2007 |
| 7186302 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
Mar. 6, 2007 |
| 7109530 |
Nitride-based semiconductor element |
Sep. 19, 2006 |
| 7075111 |
Nitride semiconductor substrate and its production method |
Jul. 11, 2006 |
| 7042150 |
Light-emitting device, method of fabricating the device, and LED lamp using the device |
May. 9, 2006 |
| 7038300 |
Apparatus with improved layers of group III-nitride semiconductor |
May. 2, 2006 |
| 7033854 |
Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate |
Apr. 25, 2006 |
| 7033436 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
Apr. 25, 2006 |
| 7033858 |
Method for making Group III nitride devices and devices produced thereby |
Apr. 25, 2006 |
| 7018912 |
Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby |
Mar. 28, 2006 |
| 7005685 |
Gallium-nitride-based compound semiconductor device |
Feb. 28, 2006 |
| 7001813 |
Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths |
Feb. 21, 2006 |
| 6964705 |
Method for producing semiconductor crystal |
Nov. 15, 2005 |
| 6946369 |
Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material |
Sep. 20, 2005 |
| 6943095 |
Low defect density (Ga, A1, In) N and HVPE process for making same |
Sep. 13, 2005 |
| 6918961 |
Group III nitride compound semiconductor device and producing method therefor |
Jul. 19, 2005 |
| 6900067 |
Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
May. 31, 2005 |
| 6900070 |
Dislocation reduction in non-polar gallium nitride thin films |
May. 31, 2005 |
| 6897138 |
Method and apparatus for producing group III nitride compound semiconductor |
May. 24, 2005 |
| 6894323 |
Group III nitride semiconductor device and its method of manufacture |
May. 17, 2005 |
| 6852253 |
Method of forming substrate |
Feb. 8, 2005 |
| 6844574 |
III-V compound semiconductor |
Jan. 18, 2005 |
| 6830948 |
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
Dec. 14, 2004 |
| 6821807 |
Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device |
Nov. 23, 2004 |
| 6790279 |
Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
Sep. 14, 2004 |
| 6765244 |
III nitride film and a III nitride multilayer |
Jul. 20, 2004 |
| 6733591 |
Method and apparatus for producing group-III nitrides |
May. 11, 2004 |
| 6713845 |
Nitride-based semiconductor element |
Mar. 30, 2004 |
| 6699760 |
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects |
Mar. 2, 2004 |
| 6696306 |
Methods of fabricating layered structure and semiconductor device |
Feb. 24, 2004 |
| 6685773 |
Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same |
Feb. 3, 2004 |
| 6673702 |
Method for producing a semiconductor device |
Jan. 6, 2004 |
| 6656269 |
Method of manufacturing nitride system III-V compound layer and method of manufacturing substrate |
Dec. 2, 2003 |
| 6645295 |
Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
Nov. 11, 2003 |
| 6638838 |
Semiconductor structure including a partially annealed layer and method of forming the same |
Oct. 28, 2003 |
| 6630692 |
III-Nitride light emitting devices with low driving voltage |
Oct. 7, 2003 |
| 6627552 |
Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same |
Sep. 30, 2003 |
| 6599362 |
Cantilever epitaxial process |
Jul. 29, 2003 |
| 6593016 |
Group III nitride compound semiconductor device and producing method thereof |
Jul. 15, 2003 |
| 6594293 |
Relaxed InxGa1-xAs layers integrated with Si |
Jul. 15, 2003 |
| 6589335 |
Relaxed InxGa1-xAs layers integrated with Si |
Jul. 8, 2003 |
| 6545300 |
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby |
Apr. 8, 2003 |
| 6533874 |
GaN-based devices using thick (Ga, Al, In)N base layers |
Mar. 18, 2003 |
| 6528394 |
Growth method of gallium nitride film |
Mar. 4, 2003 |
| 6521514 |
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
Feb. 18, 2003 |
| 6508878 |
GaN system compound semiconductor and method for growing crystal thereof |
Jan. 21, 2003 |
| 6498113 |
Free standing substrates by laser-induced decoherency and regrowth |
Dec. 24, 2002 |
| 6492191 |
Method for manufacturing an A1xGayInzN film using a metal film for heat radiation |
Dec. 10, 2002 |
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