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Class Information
Number: 257/E21.113
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo) > Deposition on an insulating or a metallic substrate (epo)
Description: This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C3.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8623747 Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices Jan. 7, 2014
8524012 Technique for the growth of planar semi-polar gallium nitride Sep. 3, 2013
8507304 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) Aug. 13, 2013
8409892 Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates Apr. 2, 2013
8357594 Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates Jan. 22, 2013
8193079 Method for conductivity control of (Al,In,Ga,B)N Jun. 5, 2012
8128756 Technique for the growth of planar semi-polar gallium nitride Mar. 6, 2012
8110482 Miscut semipolar optoelectronic device Feb. 7, 2012
8110484 Conductive nitride semiconductor substrate and method for producing the same Feb. 7, 2012
7977673 Semiconductor layer with a Ga.sub.2O.sub.3 system Jul. 12, 2011
7923736 Flat panel display Apr. 12, 2011
7811847 Optical semiconductor device and method for manufacturing the same Oct. 12, 2010
7812366 Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same Oct. 12, 2010
7800116 Group III-nitride semiconductor device with a cap layer Sep. 21, 2010
7785991 Process for integrating a III-N type component on a (001) nominal silicium substrate Aug. 31, 2010
7759149 Gallium nitride-based semiconductor stacked structure Jul. 20, 2010
7704331 Technique for the growth of planar semi-polar gallium nitride Apr. 27, 2010
7691658 Method for improved growth of semipolar (Al,In,Ga,B)N Apr. 6, 2010
7687293 Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition Mar. 30, 2010
7514306 Method for manufacturing semiconductor device Apr. 7, 2009
7504274 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Mar. 17, 2009
7399692 III-nitride semiconductor fabrication Jul. 15, 2008
7276732 Thin film transistor array panel Oct. 2, 2007
7220324 Technique for the growth of planar semi-polar gallium nitride May. 22, 2007
7186302 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Mar. 6, 2007
7109530 Nitride-based semiconductor element Sep. 19, 2006
7075111 Nitride semiconductor substrate and its production method Jul. 11, 2006
7042150 Light-emitting device, method of fabricating the device, and LED lamp using the device May. 9, 2006
7038300 Apparatus with improved layers of group III-nitride semiconductor May. 2, 2006
7033854 Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate Apr. 25, 2006
7033858 Method for making Group III nitride devices and devices produced thereby Apr. 25, 2006
7033436 Crystal growth method for nitride semiconductor and formation method for semiconductor device Apr. 25, 2006
7018912 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby Mar. 28, 2006
7005685 Gallium-nitride-based compound semiconductor device Feb. 28, 2006
7001813 Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths Feb. 21, 2006
6964705 Method for producing semiconductor crystal Nov. 15, 2005
6946369 Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material Sep. 20, 2005
6943095 Low defect density (Ga, A1, In) N and HVPE process for making same Sep. 13, 2005
6918961 Group III nitride compound semiconductor device and producing method therefor Jul. 19, 2005
6900067 Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers May. 31, 2005
6900070 Dislocation reduction in non-polar gallium nitride thin films May. 31, 2005
6897138 Method and apparatus for producing group III nitride compound semiconductor May. 24, 2005
6894323 Group III nitride semiconductor device and its method of manufacture May. 17, 2005
6852253 Method of forming substrate Feb. 8, 2005
6844574 III-V compound semiconductor Jan. 18, 2005
6830948 Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device Dec. 14, 2004
6821807 Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device Nov. 23, 2004
6790279 Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor Sep. 14, 2004
6765244 III nitride film and a III nitride multilayer Jul. 20, 2004
6733591 Method and apparatus for producing group-III nitrides May. 11, 2004

1 2 3

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