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Class Information
Number: 257/E21.112
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo) > Deposition on a semiconductor substrate not being group iii-v compound (epo)
Description: This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C2.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8664027 LED mesa sidewall isolation by ion implantation Mar. 4, 2014
8648328 Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces Feb. 11, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8372671 Solid state devices with semi-polar facets and associated methods of manufacturing Feb. 12, 2013
8329541 InP-based transistor fabrication Dec. 11, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8188573 Nitride semiconductor structure May. 29, 2012
8138003 Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches Mar. 20, 2012
8084337 Growth of III-V compound semiconductor nanowires on silicon substrates Dec. 27, 2011
7955959 Method for manufacturing GaN-based film LED Jun. 7, 2011
7951694 Semiconductor structure and method of manufacture of same May. 31, 2011
7935985 N-face high electron mobility transistors with low buffer leakage and low parasitic resistance May. 3, 2011
7915698 Nitride semiconductor substrate having a base substrate with parallel trenches Mar. 29, 2011
7880230 Zero capacitor RAM with reliable drain voltage application and method for manufacturing the same Feb. 1, 2011
7868327 Thin film transistor and method of manufacturing the same Jan. 11, 2011
7863178 Method for manufacturing a GaN based optical device Jan. 4, 2011
7812366 Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same Oct. 12, 2010
7759737 Dual structure FinFET and method of manufacturing the same Jul. 20, 2010
7727830 Fabrication of germanium nanowire transistors Jun. 1, 2010
7700418 Method for production of thin-film semiconductor device Apr. 20, 2010
7691724 Method for manufacturing SOI substrate Apr. 6, 2010
7692213 Integrated circuit system employing a condensation process Apr. 6, 2010
7679104 Vertical type semiconductor device and manufacturing method of the device Mar. 16, 2010
7544998 Prevention of parasitic channel in an integrated SOI process Jun. 9, 2009
7491627 III-nitride device and method with variable epitaxial growth direction Feb. 17, 2009
7473587 High-quality SGOI by oxidation near the alloy melting temperature Jan. 6, 2009
7462913 Semiconductor device having first and second separation trenches Dec. 9, 2008
7439135 Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same Oct. 21, 2008
7399692 III-nitride semiconductor fabrication Jul. 15, 2008
7358162 Method of manufacturing semiconductor device Apr. 15, 2008
7271445 Ultra-thin semiconductors bonded on glass substrates Sep. 18, 2007
7250360 Single step, high temperature nucleation process for a lattice mismatched substrate Jul. 31, 2007
7151303 Fully-depleted (FD) (SOI) MOSFET access transistor Dec. 19, 2006
7063997 Process for producing nitride semiconductor light-emitting device Jun. 20, 2006
7001791 GaN growth on Si using ZnO buffer layer Feb. 21, 2006
6972051 Bulk single crystal gallium nitride and method of making same Dec. 6, 2005
6958093 Free-standing (Al, Ga, In)N and parting method for forming same Oct. 25, 2005
6955977 Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures Oct. 18, 2005
6943095 Low defect density (Ga, A1, In) N and HVPE process for making same Sep. 13, 2005
6939733 Group III nitride compound semiconductor device and method of producing the same Sep. 6, 2005
6930329 Method for manufacturing gallium nitride compound semiconductor Aug. 16, 2005
6906351 Group III-nitride growth on Si substrate using oxynitride interlayer Jun. 14, 2005
6897138 Method and apparatus for producing group III nitride compound semiconductor May. 24, 2005
6893945 Method for manufacturing gallium nitride group compound semiconductor May. 17, 2005
6846754 Boron phosphide-based semiconductor layer and vapor phase growth method thereof Jan. 25, 2005
6835966 Method for manufacturing gallium nitride compound semiconductor Dec. 28, 2004
6830948 Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device Dec. 14, 2004
6828169 Method of forming group-III nitride semiconductor layer on a light-emitting device Dec. 7, 2004
6818061 Method for growing single crystal GaN on silicon Nov. 16, 2004

1 2 3

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