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Class Information
Number: 257/E21.112
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo) > Deposition on a semiconductor substrate not being group iii-v compound (epo)
Description: This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439135 |
Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same |
Oct. 21, 2008 |
| 7399692 |
III-nitride semiconductor fabrication |
Jul. 15, 2008 |
| 7358162 |
Method of manufacturing semiconductor device |
Apr. 15, 2008 |
| 7271445 |
Ultra-thin semiconductors bonded on glass substrates |
Sep. 18, 2007 |
| 7250360 |
Single step, high temperature nucleation process for a lattice mismatched substrate |
Jul. 31, 2007 |
| 7151303 |
Fully-depleted (FD) (SOI) MOSFET access transistor |
Dec. 19, 2006 |
| 7063997 |
Process for producing nitride semiconductor light-emitting device |
Jun. 20, 2006 |
| 7001791 |
GaN growth on Si using ZnO buffer layer |
Feb. 21, 2006 |
| 6972051 |
Bulk single crystal gallium nitride and method of making same |
Dec. 6, 2005 |
| 6958093 |
Free-standing (Al, Ga, In)N and parting method for forming same |
Oct. 25, 2005 |
| 6955977 |
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures |
Oct. 18, 2005 |
| 6943095 |
Low defect density (Ga, A1, In) N and HVPE process for making same |
Sep. 13, 2005 |
| 6939733 |
Group III nitride compound semiconductor device and method of producing the same |
Sep. 6, 2005 |
| 6930329 |
Method for manufacturing gallium nitride compound semiconductor |
Aug. 16, 2005 |
| 6906351 |
Group III-nitride growth on Si substrate using oxynitride interlayer |
Jun. 14, 2005 |
| 6897138 |
Method and apparatus for producing group III nitride compound semiconductor |
May. 24, 2005 |
| 6893945 |
Method for manufacturing gallium nitride group compound semiconductor |
May. 17, 2005 |
| 6846754 |
Boron phosphide-based semiconductor layer and vapor phase growth method thereof |
Jan. 25, 2005 |
| 6835966 |
Method for manufacturing gallium nitride compound semiconductor |
Dec. 28, 2004 |
| 6830948 |
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
Dec. 14, 2004 |
| 6828169 |
Method of forming group-III nitride semiconductor layer on a light-emitting device |
Dec. 7, 2004 |
| 6818926 |
Method for manufacturing gallium nitride compound semiconductor |
Nov. 16, 2004 |
| 6818061 |
Method for growing single crystal GaN on silicon |
Nov. 16, 2004 |
| 6812053 |
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
Nov. 2, 2004 |
| 6803602 |
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
Oct. 12, 2004 |
| 6794210 |
Method for growing GaN compound semiconductor crystal and semiconductor substrate |
Sep. 21, 2004 |
| 6787385 |
Method of preparing nitrogen containing semiconductor material |
Sep. 7, 2004 |
| 6773946 |
Method for fabricating light-emitting diode using nanosize nitride semiconductor multiple quantum wells |
Aug. 10, 2004 |
| 6768135 |
Dual process semiconductor heterostructures |
Jul. 27, 2004 |
| 6765240 |
Bulk single crystal gallium nitride and method of making same |
Jul. 20, 2004 |
| 6764932 |
Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures |
Jul. 20, 2004 |
| 6750121 |
Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beam |
Jun. 15, 2004 |
| 6745717 |
Method and apparatus for preparing nitride semiconductor surfaces |
Jun. 8, 2004 |
| 6713789 |
Group III nitride compound semiconductor device and method of producing the same |
Mar. 30, 2004 |
| 6700179 |
Method for growing GaN compound semiconductor crystal and semiconductor substrate |
Mar. 2, 2004 |
| 6627552 |
Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same |
Sep. 30, 2003 |
| 6610144 |
Method to reduce the dislocation density in group III-nitride films |
Aug. 26, 2003 |
| 6610583 |
Method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured |
Aug. 26, 2003 |
| 6582986 |
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures |
Jun. 24, 2003 |
| 6580098 |
Method for manufacturing gallium nitride compound semiconductor |
Jun. 17, 2003 |
| 6576571 |
Process of vapor phase growth of nitride semiconductor |
Jun. 10, 2003 |
| 6566256 |
Dual process semiconductor heterostructures and methods |
May. 20, 2003 |
| 6533874 |
GaN-based devices using thick (Ga, Al, In)N base layers |
Mar. 18, 2003 |
| 6534332 |
Method of growing GaN films with a low density of structural defects using an interlayer |
Mar. 18, 2003 |
| 6530991 |
Method for the formation of semiconductor layer |
Mar. 11, 2003 |
| 6524932 |
Method of fabricating group-III nitride-based semiconductor device |
Feb. 25, 2003 |
| 6495894 |
Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate |
Dec. 17, 2002 |
| 6492191 |
Method for manufacturing an A1xGayInzN film using a metal film for heat radiation |
Dec. 10, 2002 |
| 6440823 |
Low defect density (Ga, Al, In)N and HVPE process for making same |
Aug. 27, 2002 |
| 6429465 |
Nitride semiconductor device and method of manufacturing the same |
Aug. 6, 2002 |
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