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Class Information
Number: 257/E21.111
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo) > Doping the epitaxial deposit (epo) > Doping with transition metals to form semi-insulating layers (epo)
Description: This subclass is indented under subclass E21.11. This subclass is substantially the same in scope as ECLA classification H01L21/205C6B.

Patents under this class:

Patent Number Title Of Patent Date Issued
8637931 finFET with merged fins and vertical silicide Jan. 28, 2014
8610127 Thin film transistor array substrate and manufacturing method thereof Dec. 17, 2013
8455313 Method for fabricating finFET with merged fins and vertical silicide Jun. 4, 2013
8368078 Thin film transistor array substrate and manufacturing method thereof Feb. 5, 2013
8169025 Strained CMOS device, circuit and method of fabrication May. 1, 2012
8058091 Front lit PIN/NIP diode having a continuous anode/cathode Nov. 15, 2011
8003550 Method for revealing emergent dislocations in a germanium-base crystalline element Aug. 23, 2011
7935634 Integrated circuits, micromechanical devices, and method of making same May. 3, 2011
7897422 Semiconductor light-emitting device and a method to produce the same Mar. 1, 2011
7863167 Method of manufacturing group III nitride crystal Jan. 4, 2011
7804176 Semiconductor device Sep. 28, 2010
7745256 Rectangular-shaped controlled collapse chip connection Jun. 29, 2010
7723788 Semiconductor device and method for forming the same May. 25, 2010
7723817 Semiconductor device and manufacturing method thereof May. 25, 2010
7595259 Method for manufacturing compound semiconductor substrate with pn junction Sep. 29, 2009
7585752 Process for deposition of semiconductor films Sep. 8, 2009
7518147 Organic electro luminescence device and fabrication method thereof Apr. 14, 2009
7501336 Metal gate device with reduced oxidation of a high-k gate dielectric Mar. 10, 2009
7432171 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications Oct. 7, 2008
7276732 Thin film transistor array panel Oct. 2, 2007
7135715 Co-doping for fermi level control in semi-insulating Group III nitrides Nov. 14, 2006
6955858 Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same Oct. 18, 2005
6153920 Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby Nov. 28, 2000
6043139 Process for controlling dopant diffusion in a semiconductor layer Mar. 28, 2000
5844303 Semiconductor device having improved electronic isolation Dec. 1, 1998
5731626 Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby Mar. 24, 1998
5656538 Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices Aug. 12, 1997
5569953 Semiconductor device having an isolation region enriched in oxygen Oct. 29, 1996
5480833 Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof Jan. 2, 1996
5128275 Method for fabricating a semiconductor device including a semi-insulating semiconductor layer Jul. 7, 1992
5098857 Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy Mar. 24, 1992
5045496 Semi-insulating cobalt doped indium phosphide grown by MOCVD Sep. 3, 1991
4999315 Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers Mar. 12, 1991
4888624 Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement Dec. 19, 1989
4830982 Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors May. 16, 1989
4782034 Semi-insulating group III-V based compositions doped using bis arene titanium sources Nov. 1, 1988
4774554 Semiconductor devices employing Ti-doped Group III-V epitaxial layer Sep. 27, 1988
4253887 Method of depositing layers of semi-insulating gallium arsenide Mar. 3, 1981
4193835 Method for growing semiconductor crystal Mar. 18, 1980
4001056 Epitaxial deposition of III-V compounds containing isoelectronic impurities Jan. 4, 1977

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