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Class Information
Number: 257/E21.11
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo) > Doping the epitaxial deposit (epo)
Description: This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C6.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.111 Doping with transition metals to form semi-insulating layers (epo) 40

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8633093 Oxygen doping method to gallium nitride single crystal substrate Jan. 21, 2014
8415180 Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device Apr. 9, 2013
8334156 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same Dec. 18, 2012
8329541 InP-based transistor fabrication Dec. 11, 2012
8222052 Method for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reation analysis Jul. 17, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8211726 Method of manufacturing nitride semiconductor light emitting device Jul. 3, 2012
8193079 Method for conductivity control of (Al,In,Ga,B)N Jun. 5, 2012
8119428 Method of manufacturing nitride semiconductor light emitting device Feb. 21, 2012
8093715 Enhancement of thermal interface conductivities with carbon nanotube arrays Jan. 10, 2012
7981712 Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip Jul. 19, 2011
7968363 Manufacture method for ZnO based semiconductor crystal and light emitting device using same Jun. 28, 2011
7943492 Method of forming nitride film and nitride structure May. 17, 2011
7897422 Semiconductor light-emitting device and a method to produce the same Mar. 1, 2011
7883913 Manufacturing method of image sensor of vertical type Feb. 8, 2011
7842532 Nitride semiconductor device and method for manufacturing the same Nov. 30, 2010
7582531 Method for producing a buried semiconductor layer Sep. 1, 2009
7326972 Interconnect structure in integrated circuits Feb. 5, 2008
7063997 Process for producing nitride semiconductor light-emitting device Jun. 20, 2006
7041519 Method for producing p-type group III nitride compound semiconductor May. 9, 2006
7018728 Boron phosphide-based semiconductor device and production method thereof Mar. 28, 2006
6991955 Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same Jan. 31, 2006
6921678 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device Jul. 26, 2005
6920166 Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device Jul. 19, 2005
6890809 Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device May. 10, 2005
6881261 Method for fabricating semiconductor device Apr. 19, 2005
6875995 Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor Apr. 5, 2005
6849862 III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer Feb. 1, 2005
6800879 Method of preparing indium phosphide heterojunction bipolar transistors Oct. 5, 2004
6773504 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate Aug. 10, 2004
6737367 UV-supported thermal treatment of compound semiconductors in RTP systems May. 18, 2004
6709881 Method for manufacturing semiconductor and method for manufacturing semiconductor device Mar. 23, 2004
6620709 Fabrication of semiconductor materials and devices with controlled electrical conductivity Sep. 16, 2003
6614115 Enhancement of carrier concentration in As-containing layers Sep. 2, 2003
6586774 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device Jul. 1, 2003
6586777 Nitride semiconductor light emitting device Jul. 1, 2003
6559038 Method for growing p-n heterojunction-based structures utilizing HVPE techniques May. 6, 2003
6559467 P-n heterojunction-based structures utilizing HVPE grown III-V compound layers May. 6, 2003
6555452 Method for growing p-type III-V compound material utilizing HVPE techniques Apr. 29, 2003
6498111 Fabrication of semiconductor materials and devices with controlled electrical conductivity Dec. 24, 2002
6479839 III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer Nov. 12, 2002
6476420 P-N homojunction-based structures utilizing HVPE growth III-V compound layers Nov. 5, 2002
6440764 Enhancement of carrier concentration in As-containing contact layers Aug. 27, 2002
6437374 Semiconductor device and method of forming a semiconductor device Aug. 20, 2002
6362510 Semiconductor topography having improved active device isolation and reduced dopant migration Mar. 26, 2002
6329215 Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity Dec. 11, 2001
6320207 Light emitting device having flat growth GaN layer Nov. 20, 2001
6281099 Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type Aug. 28, 2001
6277713 Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor Aug. 21, 2001
6225195 Method for manufacturing group III-V compound semiconductor May. 1, 2001

1 2 3

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