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Class Information
Number: 257/E21.109
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo) > Epitaxial deposition of group iii-v compound (epo) > Using molecular beam technique (epo)
Description: This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C4.










Patents under this class:

Patent Number Title Of Patent Date Issued
8709923 Method of manufacturing III-nitride crystal Apr. 29, 2014
8623747 Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices Jan. 7, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8592870 Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistor Nov. 26, 2013
8524583 Method for growing semipolar nitride Sep. 3, 2013
8415751 Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain Apr. 9, 2013
8410480 CMOS-MEMS cantilever structure Apr. 2, 2013
8410523 Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys Apr. 2, 2013
8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Sep. 4, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8143646 Stacking fault and twin blocking barrier for integrating III-V on Si Mar. 27, 2012
7964477 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device Jun. 21, 2011
7718468 Manufacture method for ZnO-containing compound semiconductor layer May. 18, 2010
7666734 Semiconductor device having a fuse Feb. 23, 2010
7659137 Structure capable of use for generation or detection of electromagnetic radiation, optical semiconductor device, and fabrication method of the structure Feb. 9, 2010
7629237 MBE growth of a semiconductor layer structure Dec. 8, 2009
7345002 Replication and transfer of microstructures and nanostructures Mar. 18, 2008
7288423 In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition Oct. 30, 2007
6911084 Low temperature epitaxial growth of quaternary wide bandgap semiconductors Jun. 28, 2005
6894323 Group III nitride semiconductor device and its method of manufacture May. 17, 2005
6745717 Method and apparatus for preparing nitride semiconductor surfaces Jun. 8, 2004
6579780 Method for growing a compound semiconductor, quantum well structure using the same, and compound semiconductor device including the same Jun. 17, 2003
6358822 Method of epitaxially growing III-V compound semiconductor containing nitrogen and at least another group V element utilizing MBE Mar. 19, 2002
6281099 Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type Aug. 28, 2001
6270574 Method of growing a buffer layer using molecular beam epitaxy Aug. 7, 2001
6106613 Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate Aug. 22, 2000
6033972 Growing method of GaAs quantum dots using chemical beam epitaxy Mar. 7, 2000
6030849 Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate Feb. 29, 2000
5940684 Method and equipment for manufacturing semiconductor device Aug. 17, 1999
5940723 Heteroepitaxial growth of III-V materials Aug. 17, 1999
5937313 Method of forming quantum wire for compound semiconductor Aug. 10, 1999
5756375 Semiconductor growth method with thickness control May. 26, 1998
5227006 Method for selectively growing gallium-containing layers Jul. 13, 1993











 
 
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